CN114038926A - 一种高增益平面型雪崩单光子探测器及其制备方法 - Google Patents
一种高增益平面型雪崩单光子探测器及其制备方法 Download PDFInfo
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Abstract
本发明公开了一种高增益平面型雪崩单光子探测器及其制备方法，包括衬底、缓冲层、P型层、I型层、N型层、阴极引出端和阳极引出端。缓冲层和P型层依次生长在衬底上、N型层和I型层形成在P型层中；光子从P型衬底入射，P型衬底上的阴极引出端接电源的负极，I层作为载流子的雪崩倍增区域和光子的吸收区，N型层上的阳极引出端接电源的正极。本发明结构简单，易于制备，可同时在高偏压下实现低暗电流和高增益。
Description
技术领域
本发明涉及探测器技术，具体指一种基于雪崩效应的低暗电流、高增益的雪崩单光子探测器及制备方法。
背景技术
作为三大大气窗口之一，中波红外拥有优秀的抗背景辐射能力，因此在全天候通信空间通信中拥有独特的优势。HgCdTe材料的可调带隙使其成为第三代中波红外光电探测器的有力选择。
量子通信以光子作为载体，这对探测器提出了更高的要求。雪崩探测器可以在高偏压下获得巨大的增益，满足了探测极弱的单光子信号的基本需要。单光子探测器可以探测到光子数目的极限，因此在激光雷达，大气遥感，生物检测等领域有广泛的应用前景。
实现高增益的单光子器件经常需要工作在大偏压之下，但碲镉汞材料的窄禁带宽度导致了高偏压下巨大的隧穿电流，而过大的暗电流会湮灭光信号，从而导致无法分辨出光电流的贡献。工艺过程和结构参数基本决定了暗电流的大小，因此，通过优化工艺和结构参数可以显著的降低高偏压下的暗电流，并同时获得高增益，从而实现高性能的单光子探测器。本发明结构简单，易于制备，可同时在高偏压下实现低暗电流和高增益。
发明内容
本发明主要在于克服现有技术存在的缺陷，提供一种高增益平面型雪崩单光子探测器结构及掺杂参数。为实现上述目的，本发明的技术方案如下：
本发明所公开的一种高增益平面型雪崩单光子探测器结构，包括衬底1、缓冲层2、P型层3、N型层4、I型层5、钝化层6、阴极引出端7和阳极引出端8。在所述的衬底1上依次生长缓冲层2和P型层3，通过离子注入技术和热处理技术分别N型层4和I型层5，通过溅射技术或沉积技术生长钝化层6，通过溅射技术或蒸发技术生长阴极引出端7和阳极引出端8。
所述的衬底1材料为碲锌镉、砷化镓、碲化镉或硅
所述的缓冲层2为碲化镉，降低衬底材料与碲镉汞的晶格失配，若衬底材料为碲锌镉或碲化镉则不需要生长缓冲层，厚度范围为0.8mm～1.2mm。
所述的P型层3为Hg空位掺杂或原位掺杂的P型碲镉汞，厚度范围为8μm～15μm，掺杂浓度为5×1015cm-3～5×1016cm-3。
所述N型层4为离子注入的N型碲镉汞，厚度范围在1μm～3μm，掺杂浓度为5×1015cm-3～1×1017cm-3。
所述的I型层5为非故意掺杂的N-型碲镉汞，厚度范围为2μm～3μm，掺杂浓度为5×1014cm-3～1×1015cm-3。
所述的钝化层6为SiO2、Si3N4、CdTe、ZnS、CdZnTe或CdTe+ZnS，厚度为0.2μm～2μm，其中CdTe与ZnS双层钝化膜，CdTe在下ZnS在上，CdTe和ZnS的厚度比为1:3。
所述的阴极引出端7和阳极引出端8均为Cr+Au双层电极或Sn+Au双层电极，下层与平面结构接触的欧姆接触层为Cr或Sn，上层金属导电层为Au，Cr或Sn的厚度为0.01μm～0.1μm，Au的厚度0.1μm～0.6μm，多阴极引出端防止器件内电场分布不均匀，阳极吸收倍增的电子。
本发明提供一种高增益平面型雪崩单光子探测器的制备方法，包括以下步骤：
①在衬底1上，生长一层的CdTe缓冲层2；
②通过外延技术在缓冲层2上生长Hg空位掺杂的碲镉汞，形成的P型碲镉汞薄层3；
③采取离子注入技术形成N型层4；
④采取热处理技术形成I型层5，形成PIN结构；
⑤采取溅射技术或沉积技术在HgCdTe上生长钝化层6；
⑥使用湿法腐蚀或者干法刻蚀去除电极口处钝化层材料；
⑦采取溅射技术或蒸发技术在电极孔处生长阴极引出端7和阳极引出端8，形成良好的金半接触；
⑧将器件与电路连接测试。
采用了上述技术方案后，本发明具有以下的有益效果：
通过调整I型层的参数大大降低了高偏压下器件的隧穿电流，提升了雪崩二极管单光子探测器的增益。本发明结构简单，易于制备，可同时在高偏压下实现低暗电流和高增益。
附图说明
附图1是本发明的结构横截面示意图；
1为衬底；
2为缓冲层；
3为P型层；
4为N型层；
5为I型层；
6为钝化层；
7为阴极引出端；
8为阳极引出端。
附图2是本发明中实施例1平面型雪崩二极管结构的暗电流、光电流和增益随电压关系图，纵坐标为对数坐标；
附图3是本发明中实施例2平面型雪崩二极管结构的暗电流、光电流和增益随电压关系图，纵坐标为对数坐标；
附图4是本发明中实施例3平面型雪崩二极管结构的暗电流、光电流和增益随电压关系图，纵坐标为对数坐标.
具体实施方式
实施例1
见附图1，本实施例的高增益平面型雪崩单光子探测器结构。
探测器包括砷化镓衬底1、缓冲层2、P型层3、N型层4、I型层5、钝化层6、阴极引出端7和阳极引出端8。
上述高增益平面型雪崩单光子探测器结构的制作方法，包括以下步骤：
①在砷化镓衬底(1)上，通过分子束外延技术生长一层厚度为1.2mm的CdTe缓冲层(2)。
②通过分子束外延生长技术生长As掺杂掺杂的碲镉汞，形成厚度为15μm、掺杂浓度为的1×1016cm-3的P型层(3)；
③通过硼离子注入技术在P型层(2)上形成厚度为1μm、掺杂浓度为5×1015cm-3的N型层(4)；
④通过热处理技术成结，形成厚度为2μm、掺杂浓度为5×1014cm-3的I型层(5)；
⑤通过化学沉积技术生长钝化层(6)，形成200nm的SiO2钝化层；
⑥使用反应离子刻蚀刻蚀去除电极孔位置的钝化层材料；
⑦通过电子束蒸发生长阴极引出端(7)和阳极引出端(8)，形成Sn+Au双层电极，Sn在下Au在上，厚度为20nm+200nm；
⑧将器件与电路连接测试。
附图2是本发明中实施例1低暗电流高增益平面型雪崩单光子探测器结构的暗电流、光电流和增益随电压关系。它在-9.5V时的暗电流和增益分别为3.47×10-9A和625。
实施例2
见附图1，本实施例的高增益平面型雪崩单光子探测器结构。
探测器包括硅衬底1、缓冲层2、P型层3、N型层4、I型层5、钝化层6、阴极引出端7和阳极引出端8。
上述平高增益面型雪崩单光子探测器结构的制作方法，包括以下步骤：
①在硅衬底(1)上，通过分子束外延技术生长一层厚度为0.8mm的CdTe缓冲层(2)。
②通过分子束外延生长技术生长As掺杂掺杂的碲镉汞，形成厚度为13μm、掺杂浓度为的1×1016cm-3的P型层(3)；
③通过硼离子注入技术在P型层(2)上形成厚度为3μm、掺杂浓度为1×1017cm-3的N型层(4)；
④通过热处理技术成结，形成厚度为3μm、掺杂浓度为1×1015cm-3的I型层(5)；
⑤通过化学沉积技术生长钝化层(6)，形成200nm的Si3N4钝化层；
⑥使用反应离子刻蚀刻蚀去除电极孔位置的钝化层材料；
⑦通过电子束蒸发生长阴极引出端(7)和阳极引出端(8)，形成Sn+Au双层电极，Sn在下Au在上，厚度为20nm+200nm；
⑧将器件与电路连接测试。
附图3是本发明中实施例2低暗电流高增益平面型雪崩单光子探测器结构的暗电流、光电流和增益随电压关系。它在-9.5V时的暗电流和增益分别为3.47×10-9A和625。
实施例3
见附图1，本实施例的高增益平面型雪崩单光子探测器结构。
探测器包括碲锌镉衬底1、P型层3、N型层4、I型层5、钝化层6、阴极引出端7和阳极引出端8。
上述高增益平面型雪崩单光子探测器结构的制作方法，包括以下步骤：
①在衬底碲锌镉上，通过垂直液相外延生长技术生长Hg空位掺杂的碲镉汞，形成厚度为8μm、掺杂浓度为5×1015cm-3的P型层(2)；
②通过硼离子注入技术在P型层(3)上形成厚度为2μm、掺杂浓度为5×1016cm-3的N型层(4)；
③通过热处理技术成结，形成厚度为2.5μm、掺杂浓度为8×1014cm-3的I型层(5)；
④通过磁控溅射技术生长CdTe+ZnS钝化层(6)，形成200nm的双层钝化层，CdTe在下ZnS在上，ZnS和CdTe的厚度分别为50nm和150nm；
⑤使用盐酸及重铬酸溶液去除电极孔位置的双层钝化层材料；
⑥通过磁控溅射技术生长阴极引出端(7)和阳极引出端(8)，形成Cr+Au双层电极，Cr在下Au在上，厚度为30nm+220nm；
⑦将器件与电路连接测试。
附图4是本发明中实施例3同时具有低暗电流和高增益特性的平面型雪崩单光子探测器结构的暗电流、光电流和增益随电压关系。它在-9.5V的暗电流和增益分别为2.22×10-10A和684。
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。
Claims (9)
1.一种高增益平面型雪崩单光子探测器，包括衬底(1)、缓冲层(2)、P型层(3)、N型层(4)、I型层(5)、钝化层(6)、阴极引出端(7)、阳极引出端(8)，其特征在于：
所述探测器的结构为：在所述的衬底(1)上依次生长缓冲层(2)和P型层(3)，N型层(4)和I型层(5)形成在P型层中，所述钝化层(6)生长在P型层(3)上，所述阴极引出端(7)和阳极引出端(8)分别位于P型层(3)和N型层(4)上。
2.根据权利要求1所述的一种高增益平面型雪崩单光子探测器,其特征在于，所述的衬底(1)为碲锌镉、砷化镓、碲化镉或硅衬底。
3.根据权利要求1所述的一种高增益平面型雪崩单光子探测器，其特征在于，所述的缓冲层(2)为碲化镉层，厚度为0.8mm～1.2mm。
4.根据权利要求1所述的一种高增益平面型雪崩单光子探测器，其特征在于，所述的P型层(3)为Hg空位掺杂或原位掺杂的P型碲镉汞层，厚度为8μm～15μm，掺杂浓度为5×1015cm-3～5×1016cm-3。
5.根据权利要求1所述的一种高增益平面型雪崩单光子探测器，其特征在于，所述N型层(4)为离子注入的N型碲镉汞层，厚度为1μm～3μm，掺杂浓度为5×1015cm-3～1×1017cm-3。
6.根据权利要求1所述的一种高增益平面型雪崩单光子探测器，其特征在于，所述的I型层(5)为非故意掺杂的N-型碲镉汞层，厚度范围为2μm～3μm，掺杂浓度为1×1014cm-3～1×1015cm-3。
7.根据权利要求1所述的一种高增益平面型雪崩单光子探测器，其特征在于，所述的钝化层(6)为SiO2、Si3N4、CdTe、ZnS、CdZnTe或CdTe与ZnS双层钝化膜，厚度为0.2μm～2μm，其中CdTe与ZnS双层钝化膜，CdTe在下ZnS在上，CdTe和ZnS的厚度比为1:3。
8.根据权利要求1所述的一种高增益平面型雪崩单光子探测器，其特征在于，所述的阴极引出端(7)和阳极引出端(8)均为Cr和Au双层电极或Sn和Au双层电极，下层与平面结构接触的欧姆接触层为Cr或Sn，上层金属导电层为Au，Cr或Sn的厚度为0.01μm～0.1μm，Au的厚度为0.1μm～0.6μm。
9.一种制备如权利要求1所述的一种高增益平面型雪崩单光子探测器的方法，其特征在于包括以下步骤：
①在衬底(1)上，生长一层的CdTe缓冲层(2)；
②通过外延技术在缓冲层(2)上生长Hg空位掺杂的碲镉汞，形成的P型碲镉汞薄层(3)；
③采取离子注入技术形成N型层(4)；
④采取热处理技术形成I型层(5)，形成PIN结构；
⑤采取溅射技术或沉积技术在HgCdTe上生长钝化层(6)；
⑥使用湿法腐蚀或者干法刻蚀去除电极口处钝化层材料；
⑦采取溅射技术或蒸发技术在电极孔处生长阴极引出端(7)和阳极引出端(8)，形成良好的金半接触；
⑧将器件与电路连接测试。
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