CN112382687A - 一种平面型光电探测器及其制备方法 - Google Patents
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Abstract
本发明公开了一种平面型光电探测器及其制备方法，该探测器包括衬底、生长于衬底上的缓冲层、生长于缓冲层上的无掺杂光吸收层，所述衬底采用了不导电半绝缘衬底，所述无掺杂光吸收层中的部分区域进行P型扩散形成扩散掺杂区，其余部分为无掺杂区，所述平面型光电探测器还包括沉积在所述无掺杂光吸收层表面的钝化层，钝化层上对应于扩散掺杂区与无掺杂区处分别开窗口沉积多层金属,形成P区金属电极和无掺杂区金属电极。该光电探测器结构简单，无需刻蚀，外延工艺简单，降低了自由载流子的光吸收，同时避免了台面刻蚀引入的侧边漏电的情况发生。
Description
技术领域
本发明涉及光电探测技术领域，具体涉及一种平面型光电探测器及其制备方法。
背景技术
在光纤通讯以及红外探测领域的光电探测器，器件结构常见于台面型与平面型结构，台面器件设计空间大且功能易调控，但需要精确的外延生长与台面刻蚀控制，刻蚀后暴露的侧边容易形成器件的漏电通道。平面器件的结构与工艺简单，可靠性高，没有侧边暴露导致的暗电流情况。常见的平面型探测器通常采用导电的N型衬底，生长N型外延层后进行选区P型扩散，利用PN结的耗尽区产生光生载流子，实现光电转换后载流子在外加或自建电场下输运，最后在重掺杂的N型衬底或P型扩散层上沉积多层金属构成欧姆接触以引出电信号。上述常规器件结构均不适合大失配（>2%）异质外延条件下外延缺陷密度较高（位错密度大于108cm-2）的材料，因为从衬底贯穿到外延层表面的高密度穿透位错构成了大量载流子复合中心与漏电通道，导致光生载流子的非辐射复合并产生较高的暗电流。常见的解决方案有，在衬底上生长组分渐变或厚膜缓冲层、生长宽带隙的势垒层以及采用双台面器件结构等。通常需要大幅增加材料或器件的复杂度来降低外延缺陷对探测性能的影响。如何解决上述技术问题，是本领域技术人员致力于解决的事情。
发明内容
本发明的目的是克服现有技术的不足，提供一种平面型光电探测器。
为达到上述目的，本发明采用的技术方案是：一种平面型光电探测器，包括衬底、生长于衬底上的缓冲层、生长于缓冲层上的无掺杂光吸收层，所述衬底采用了不导电半绝缘衬底，所述无掺杂光吸收层中的部分区域进行P型扩散形成扩散掺杂区，其余部分为无掺杂区，所述平面型光电探测器还包括沉积在所述无掺杂光吸收层表面的钝化层，钝化层上对应于扩散掺杂区与无掺杂区处分别开窗口沉积多层金属，形成P区金属电极和无掺杂区金属电极。
作为一种具体的实施方式，所述衬底采用了不导电的GaAs半绝缘衬底，所述GaAs半绝缘衬底的电阻率大于1E8Ohm.cm。
作为一种具体的实施方式，所述缓冲层包括在衬底上依次生长的GaAs缓冲层与GaSb缓冲层，其中，所述GaAs缓冲层的层厚在200-500nm间，所述GaSb缓冲层的层厚在5-50nm间。
作为一种具体的实施方式，所述不掺杂光吸收层为生长在GaSb缓冲层上的InAsSb光吸收层，所述InAsSb光吸收层中Sb组分含量在5%-65%，所述InAsSb光吸收层的生长温度在500-600℃间，层厚在500-10000nm间，所述InAsSb光吸收层的背底掺杂浓度低于5E16cm-3。
本发明的另一个目的是提供一种上述平面型光电探测器的制备方法，包括以下步骤：
缓冲层的制备：在不导电半绝缘衬底上采用金属有机气相沉积法或分子束外延法生长缓冲层，生长温度450℃-650℃，所述缓冲层所采用的材料包括但不限于GaAs、InAs、GaSb、InSb中的一种或多种；
不掺杂光吸收层的制备：在缓冲层上采用金属有机化学气相沉积法或分子束外延法生长不掺杂光吸收层，生长温度450℃-650℃，V族元素/III族元素的比例为1-5:1，在不掺杂光吸收层的部分区域进行P型扩散形成扩散掺杂区，其余部分为无掺杂区；
钝化层：在不掺杂光吸收层的表面沉积形成钝化层，并在钝化层上对应于扩散掺杂区与无掺杂区处分别开窗口沉积多层金属,形成P区金属电极和无掺杂区金属电极。
作为一种具体的实施方式，所述无掺杂光吸收层中的部分区域进行P型扩散是在MOCVD设备中进行的，扩散剂为DEZn或DMZn，扩散直径50-500μm，扩散深度为100-2000nm，P型掺杂浓度高于1E19cm-3。
作为一种具体的实施方式，所述钝化层为SiO2或SiNx钝化层。
作为一种具体的实施方式，所述钝化层上开窗口沉积有三层金属，所述三层金属分别为金属Ti、Pt、Au，金属Ti的层厚在5-50nm间，金属Pt的层厚在30-100nm间，金属Au的厚度在100-1000nm间。
由于上述技术方案的运用，本发明与现有技术相比具有下列优点：
1）本发明的平面型光电探测器采用了不导电半绝缘的衬底，且其外延结构简单，只需生长单层的光吸收层即可用于器件制备，无需复杂的缓冲层与势垒层等结构；
2）本发明的平面型光电探测器中用于光吸收的外延层无需掺杂，简化了外延工艺，降低了自由载流子的光吸收；该探测器结构无需刻蚀，简化了芯片工艺，避免了台面刻蚀引入的侧边漏电；
3）本发明的平面型光电探测器中P区金属电极和无掺杂区金属电极采用了同种金属，单次金属沉积后分别形成肖特基与欧姆接触，两种电极位于器件同侧，便于电信号的引出与器件集成；无掺杂区的肖特基接触起到了电子势垒的作用，可以降低器件的暗电流，提高器件工作温度或增加探测波长。
附图说明
附图1为本发明所述的平面型光电探测器的结构示意图；
附图2为实施例1中在无掺杂光吸收层上进行P型扩散并进行钝化、制作电极的流程图；
附图3为实施例1中器件的能带图；
附图4为实施例1中器件在低温85K下测得的黑体响应度随电压变化曲线图；
附图5为实施例1中器件在低温85K下测得的光谱响应曲线图；
其中：001、衬底；002、缓冲层；003、无掺杂光吸收层；004、扩散掺杂区；005、无掺杂区；006、钝化层；007、P区金属电极；008、无掺杂区金属电极。
具体实施方式
下面结合附图及具体实施例来对本发明的技术方案作进一步的阐述。
一种平面型光电探测器，参见图1所示，包括衬底001、生长于衬底001上的缓冲层002、生长于缓冲层002上的无掺杂光吸收层003，所述衬底001采用了不导电半绝缘衬底001，所述无掺杂光吸收层003中的部分区域进行P型扩散形成扩散掺杂区004，其余部分为无掺杂区005，所述平面型光电探测器还包括沉积在所述无掺杂光吸收层003表面的钝化层006，钝化层006上对应于扩散掺杂区004与无掺杂区005处分别开窗口沉积多层金属,形成P区金属电极007和无掺杂区金属电极008。
本例中还提供一种平面型光电探测器的制备方法，包括以下步骤：
缓冲层002的制备：在不导电半绝缘衬底001上采用金属有机气相沉积法或分子束外延法生长缓冲层002，生长温度450℃-650℃，缓冲层所采用的材料包括但不限于GaAs、InAs、GaSb与InSb；
不掺杂光吸收层的制备：在缓冲层002上采用金属有机化学气相沉积法生长不掺杂光吸收层，生长温度450℃-650℃，V族元素/III元素的比例为1-5：1，在不掺杂光吸收层的部分区域进行P型扩散形成扩散掺杂区004，其余部分为无掺杂区005；
钝化层006：在不掺杂光吸收层的表面沉积形成钝化层006，并在钝化层006上对应于扩散掺杂区004与无掺杂区005处分别开窗口沉积多层金属,形成P区金属电极007和无掺杂区金属电极008。
实施例1
本例中采用不导电的GaAs半绝缘衬底，该衬底的电阻率大于1E8Ohm.cm；
缓冲层采用了金属有机气相沉积(MOCVD)设备在GaAs衬底上依次生长GaAs与GaSb缓冲层，其中，GaAs缓冲层层厚200-500nm，GaSb缓冲层层厚5-50nm；
本例中的无掺杂光吸收层采用了InAsSb光吸收层，具体的，在GaSb缓冲之上生长InAsSb光吸收层，InAsSb中的Sb组分为19.5%，与GaAs半绝缘衬底的晶格失配为8.6%，InAsSb层的生长温度在500-600℃，层厚500-10000nm，InAsSb层的背底掺杂浓度低于5E16cm-3；
参见图2所示，InAsSb层生长结束后在表面制作对准标记，沉积SiO2扩散掩膜，掩膜选区开孔后置于MOCVD设备中进行P型扩散，扩散剂为DEZn或DMZn，是扩散直径50-500μm，扩散深度100-2000nm，P型掺杂浓度高于1E19cm-3；P型扩散后沉积表面钝化层SiO2或SiNx，并在无掺杂区和扩散掺杂区对应的钝化层开窗口沉积多层金属，分别为Ti (25nm)/Pt (55nm)/Au (300nm)，金属剥离后，在无掺杂区金属与InAsSb层间形成肖特基接触，在P型扩散掺杂区金属与InAsSb层间形成欧姆接触。
无掺杂区的弱n型InAsSb与P型扩散掺杂区形成Pn结，在P型扩散掺杂区附近形成耗尽区，在InAsSb带隙能量所对应光子照射下，耗尽区生成光生电子与空穴对，其中空穴在内建电场的作用下自由输运，被P区电极所收集，器件可在无外加偏压的条件下作为光伏器件工作。由于无掺杂区肖特基势垒的形成，光生电子的输运受到凹形导带的限制，作为多数载流子的电子的导电性能受到肖特基势垒的阻碍，器件的暗电流得到降低，参见图3所示。器件在低温85K下，零偏压条件时测得的黑体响应度约为3A/W，参见图4所示，同时得到性能优异的光谱响应，截止波长为5.5μm，参见图5所示。
上述实施例只为说明本发明的技术构思及特点，其目的在于让熟悉此项技术的人士能够了解本发明的内容并据以实施，并不能以此限制本发明的保护范围。凡根据本发明精神实质所作的等效变化或修饰，都应涵盖在本发明的保护范围之内。
Claims (8)
1.一种平面型光电探测器，其特征在于，包括衬底、生长于衬底上的缓冲层、生长于缓冲层上的无掺杂光吸收层，所述衬底采用了不导电半绝缘衬底；所述无掺杂光吸收层中的部分区域进行P型扩散形成扩散掺杂区，其余部分为无掺杂区，所述平面型光电探测器还包括沉积在所述无掺杂光吸收层表面的钝化层，钝化层上对应于扩散掺杂区与无掺杂区处分别开窗口沉积多层金属，形成P区金属电极和无掺杂区金属电极。
2.根据权利要求1所述的平面型光电探测器，其特征在于，所述衬底采用了不导电的GaAs半绝缘衬底，所述GaAs半绝缘衬底的电阻率大于1E8Ohm.cm。
3.根据权利要求2所述的平面型光电探测器，其特征在于，所述缓冲层包括在衬底上依次生长的GaAs缓冲层与GaSb缓冲层，其中，所述GaAs缓冲层的层厚在200-500nm间，所述GaSb缓冲层的层厚在5-50nm间。
4.根据权利要求3所述的平面型光电探测器，其特征在于，所述不掺杂光吸收层为生长在GaSb缓冲层上的InAsSb光吸收层，所述InAsSb光吸收层中Sb组分含量在5%-65%间，所述InAsSb光吸收层的生长温度在500-600℃间，层厚在500-10000nm间，所述InAsSb光吸收层的背底掺杂浓度低于5E16cm-3。
5.一种如权利要求1至4中任一权利要求所述的平面型光电探测器的制备方法，其特征在于，包括以下步骤：
缓冲层的制备：在不导电半绝缘衬底上采用金属有机气相沉积法或分子束外延法生长缓冲层，生长温度450℃-650℃，所述缓冲层所采用的材料包括但不限于GaAs、InAs、GaSb、InSb中的一种或多种；
不掺杂光吸收层的制备：在缓冲层上采用金属有机化学气相沉积法或分子束外延法生长不掺杂光吸收层，生长温度450℃-650℃，V族元素/III族元素的比例为1-5：1，在不掺杂光吸收层的部分区域进行P型扩散形成扩散掺杂区，其余部分为无掺杂区；
钝化层：在不掺杂光吸收层的表面沉积形成钝化层，并在钝化层上对应于扩散掺杂区与无掺杂区处分别开窗口沉积多层金属,形成P区金属电极和无掺杂区金属电极。
6.根据权利要求5所述的平面型光电探测器的制备方法，其特征在于，所述无掺杂光吸收层中的部分区域进行P型扩散是在MOCVD设备中进行的，扩散剂为DEZn或DMZn，扩散直径50-500μm，扩散深度为100-2000nm，P型掺杂浓度高于1E19cm-3。
7.根据权利要求5所述的平面型光电探测器的制备方法，其特征在于，所述钝化层为SiO2或SiNx钝化层。
8.根据权利要求7所述的平面型光电探测器的制备方法，其特征在于，所述钝化层上开窗口沉积有三层金属，所述三层金属分别为金属Ti、Pt、Au，金属Ti的层厚在5-50nm间，金属Pt的层厚在30-100nm间，金属Au的厚度在100-1000nm间。
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