SE9804563D0 - A switch - Google Patents

A switch

Info

Publication number
SE9804563D0
SE9804563D0 SE9804563A SE9804563A SE9804563D0 SE 9804563 D0 SE9804563 D0 SE 9804563D0 SE 9804563 A SE9804563 A SE 9804563A SE 9804563 A SE9804563 A SE 9804563A SE 9804563 D0 SE9804563 D0 SE 9804563D0
Authority
SE
Sweden
Prior art keywords
layer
applying
electrode arranged
voltage
contact electrode
Prior art date
Application number
SE9804563A
Other languages
English (en)
Inventor
Erik Johansson
Per Skytt
Original Assignee
Asea Brown Boveri
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Brown Boveri filed Critical Asea Brown Boveri
Priority to SE9804563A priority Critical patent/SE9804563D0/sv
Publication of SE9804563D0 publication Critical patent/SE9804563D0/sv
Priority to US09/223,977 priority patent/US6222141B1/en
Priority to PCT/SE1999/002483 priority patent/WO2000039859A1/en
Priority to AU21378/00A priority patent/AU2137800A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manipulator (AREA)
  • Push-Button Switches (AREA)
SE9804563A 1998-12-28 1998-12-28 A switch SE9804563D0 (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE9804563A SE9804563D0 (sv) 1998-12-28 1998-12-28 A switch
US09/223,977 US6222141B1 (en) 1998-12-28 1998-12-31 Irradiation controlled switch
PCT/SE1999/002483 WO2000039859A1 (en) 1998-12-28 1999-12-27 A switch
AU21378/00A AU2137800A (en) 1998-12-28 1999-12-27 A switch

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9804563A SE9804563D0 (sv) 1998-12-28 1998-12-28 A switch
US09/223,977 US6222141B1 (en) 1998-12-28 1998-12-31 Irradiation controlled switch

Publications (1)

Publication Number Publication Date
SE9804563D0 true SE9804563D0 (sv) 1998-12-28

Family

ID=26663471

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9804563A SE9804563D0 (sv) 1998-12-28 1998-12-28 A switch

Country Status (4)

Country Link
US (1) US6222141B1 (sv)
AU (1) AU2137800A (sv)
SE (1) SE9804563D0 (sv)
WO (1) WO2000039859A1 (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6872901B2 (en) * 2002-11-21 2005-03-29 Exon Science Inc. Automatic actuation of device according to UV intensity
CN103928557B (zh) * 2014-04-11 2017-02-08 中国科学院上海微系统与信息技术研究所 太赫兹量子阱光电探测器的同心圆环光耦合器及制作方法
CN113193069B (zh) * 2021-03-31 2023-03-31 西安交通大学 一种hBN/BAlN异质结紫外探测器及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH655201A5 (de) 1981-09-18 1986-03-27 Bbc Brown Boveri & Cie Elektronisches bauelement bestehend aus einer elektronenkanone und einer halbleiterdiode.
US4633286A (en) 1984-04-05 1986-12-30 The United States Of America As Represented By The Secretary Of The Army Multiple gap optically activated switch
US5047623A (en) * 1990-02-02 1991-09-10 The United States Of America As Represented By The United States Department Of Energy Transparent selective illumination means suitable for use in optically activated electrical switches and optically activated electrical switches constructed using same
US5592053A (en) 1994-12-06 1997-01-07 Kobe Steel Usa, Inc. Diamond target electron beam device

Also Published As

Publication number Publication date
US6222141B1 (en) 2001-04-24
AU2137800A (en) 2000-07-31
WO2000039859A1 (en) 2000-07-06

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