JPS54988A - Field effect transistor of quadr electrode - Google Patents
Field effect transistor of quadr electrodeInfo
- Publication number
- JPS54988A JPS54988A JP6716377A JP6716377A JPS54988A JP S54988 A JPS54988 A JP S54988A JP 6716377 A JP6716377 A JP 6716377A JP 6716377 A JP6716377 A JP 6716377A JP S54988 A JPS54988 A JP S54988A
- Authority
- JP
- Japan
- Prior art keywords
- quadr
- electrode
- field effect
- effect transistor
- conduction type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To increase the dielectric strength and also to independently control the pinch off voltage of two FET's, by forming the region of inverse conduction type on the surface of a semiconductor substrate of one conduction type with spacing, and forming the region of one conduction type in the region of opposite conduction type and a MOSFET between them through a thin insulation film, thereby constituting a J-FET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6716377A JPS54988A (en) | 1977-06-06 | 1977-06-06 | Field effect transistor of quadr electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6716377A JPS54988A (en) | 1977-06-06 | 1977-06-06 | Field effect transistor of quadr electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS54988A true JPS54988A (en) | 1979-01-06 |
Family
ID=13336941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6716377A Pending JPS54988A (en) | 1977-06-06 | 1977-06-06 | Field effect transistor of quadr electrode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54988A (en) |
-
1977
- 1977-06-06 JP JP6716377A patent/JPS54988A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5366181A (en) | High dielectric strength mis type transistor | |
| EP0330142A3 (en) | Multi-gate field-effect transistor | |
| JPS52122484A (en) | Field effect type polisilicon resistance element | |
| JPS5530855A (en) | Semiconductor optical device | |
| JPS5384570A (en) | Field effect semiconductor device and its manufacture | |
| JPS54988A (en) | Field effect transistor of quadr electrode | |
| JPS56116669A (en) | Field effect transistor | |
| JPS5257786A (en) | Field effect transistor | |
| JPS5434687A (en) | Semiconductor device | |
| JPS5364481A (en) | Production of schottky type field effect transistor | |
| JPS5425678A (en) | Field effect transistor of ultra high frequency and high output | |
| JPS5287990A (en) | Semiconductor device | |
| JPS52100877A (en) | Field effect transistor of junction type | |
| JPS52153655A (en) | Gate circuit for thyristor | |
| JPS5466078A (en) | Composite field effect transistor | |
| JPS53116079A (en) | Transistor and its manufacture | |
| JPS5353980A (en) | Semiconductor device | |
| JPS5418687A (en) | Insulating gate field effect transistor | |
| JPS5378179A (en) | Inverter circuit using field effect element | |
| JPS53122383A (en) | Manufacture for semiconuctor logic circuit device of electrostatic induction type | |
| JPS538077A (en) | Field effect transistor and its production | |
| JPS57103362A (en) | Field effect transistor | |
| JPS5713767A (en) | Insulated gate type field effect transistor | |
| JPS5236459A (en) | Switching circuit | |
| JPS53109484A (en) | Semiconductor device |