SE9904710L - Halvledaranordning - Google Patents

Halvledaranordning

Info

Publication number
SE9904710L
SE9904710L SE9904710A SE9904710A SE9904710L SE 9904710 L SE9904710 L SE 9904710L SE 9904710 A SE9904710 A SE 9904710A SE 9904710 A SE9904710 A SE 9904710A SE 9904710 L SE9904710 L SE 9904710L
Authority
SE
Sweden
Prior art keywords
material layer
terminals
semiconductor device
opposite sides
layer
Prior art date
Application number
SE9904710A
Other languages
Unknown language ( )
English (en)
Other versions
SE9904710D0 (sv
Inventor
Hans Bernhoff
Jan Isberg
Erik Johansson
Mark Irwin
Per Skytt
Peter Isberg
Original Assignee
Abb Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Ab filed Critical Abb Ab
Priority to SE9904710A priority Critical patent/SE9904710L/sv
Publication of SE9904710D0 publication Critical patent/SE9904710D0/sv
Priority to AU24194/01A priority patent/AU2419401A/en
Priority to PCT/SE2000/002590 priority patent/WO2001047023A1/en
Publication of SE9904710L publication Critical patent/SE9904710L/sv

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
SE9904710A 1999-12-22 1999-12-22 Halvledaranordning SE9904710L (sv)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SE9904710A SE9904710L (sv) 1999-12-22 1999-12-22 Halvledaranordning
AU24194/01A AU2419401A (en) 1999-12-22 2000-12-20 High voltage semiconductor
PCT/SE2000/002590 WO2001047023A1 (en) 1999-12-22 2000-12-20 High voltage semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9904710A SE9904710L (sv) 1999-12-22 1999-12-22 Halvledaranordning

Publications (2)

Publication Number Publication Date
SE9904710D0 SE9904710D0 (sv) 1999-12-22
SE9904710L true SE9904710L (sv) 2001-06-23

Family

ID=20418242

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9904710A SE9904710L (sv) 1999-12-22 1999-12-22 Halvledaranordning

Country Status (3)

Country Link
AU (1) AU2419401A (sv)
SE (1) SE9904710L (sv)
WO (1) WO2001047023A1 (sv)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2834828B1 (fr) 2002-01-17 2005-04-29 Alstom Convertisseur matriciel pour la transformation d'energie electrique
WO2010129804A1 (en) * 2009-05-07 2010-11-11 Lawrence Livermore National Security, Llc Photoconductive switch package

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5323041A (en) * 1991-06-21 1994-06-21 Kabushiki Kaisha Toshiba High-breakdown-voltage semiconductor element
JP2616565B2 (ja) * 1994-09-12 1997-06-04 日本電気株式会社 電子部品組立体
SE9500013D0 (sv) * 1995-01-03 1995-01-03 Abb Research Ltd Semiconductor device having a passivation layer
SE9702220D0 (sv) * 1997-06-11 1997-06-11 Abb Research Ltd A semiconductor device with a junction termination and a method for production thereof
US5932894A (en) * 1997-06-26 1999-08-03 Abb Research Ltd. SiC semiconductor device comprising a pn junction

Also Published As

Publication number Publication date
SE9904710D0 (sv) 1999-12-22
WO2001047023A1 (en) 2001-06-28
AU2419401A (en) 2001-07-03

Similar Documents

Publication Publication Date Title
EP0371785A3 (en) Lateral conductivity modulated mosfet
JPS57141962A (en) Semiconductor integrated circuit device
EP1968104A3 (en) Semiconductor device and method for manufacturing same
EP1315212A4 (en) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
DE69332358D1 (de) Leistung-mosfet aus siliziumkarbid
EP0671769A3 (en) Insulated gate field effect transistor
WO2001059847A3 (en) Insulated gate semiconductor device having field shaping regions
EP1313147A3 (en) Power MOSFET device
AU6272798A (en) Structure for increasing the maximum voltage of silicon carbide power transistors
KR970017963A (ko) 반도체 장치 및 그 제조방법
GB2029096B (en) Semiconductor devices
CA2039415A1 (en) Buried channel heterojunction field effect transistor
WO2000060670A3 (de) Integrierte halbleitervorrichtung mit einem lateralen leistungselement
EP1143526A3 (en) Field effect transistor and method of manufacturing the same
CA2054498A1 (en) Mis transistor
DE60045708D1 (de) Bipolarer transistor
KR940020465A (ko) 태양전지
EP1009034A4 (en) SEMICONDUCTOR QUANTUM OSCILLATOR ARRANGEMENT
KR970063789A (ko) 반도체장치
SE9904710L (sv) Halvledaranordning
KR920015643A (ko) 전계효과트랜지스터
KR960026964A (ko) 반도체 장치 및 그의 제조 방법
TW328609B (en) Field effect transistor with reduced delay variation
KR960006081A (ko) 반도체 장치
KR890011100A (ko) 반금속이 있는 반도체장치

Legal Events

Date Code Title Description
NAV Patent application has lapsed

Ref document number: 9904710-2