WO2000060670A3 - Integrierte halbleitervorrichtung mit einem lateralen leistungselement - Google Patents

Integrierte halbleitervorrichtung mit einem lateralen leistungselement Download PDF

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Publication number
WO2000060670A3
WO2000060670A3 PCT/DE2000/000812 DE0000812W WO0060670A3 WO 2000060670 A3 WO2000060670 A3 WO 2000060670A3 DE 0000812 W DE0000812 W DE 0000812W WO 0060670 A3 WO0060670 A3 WO 0060670A3
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WO
WIPO (PCT)
Prior art keywords
semiconductor device
power gate
semiconductor layer
lateral power
integrated semiconductor
Prior art date
Application number
PCT/DE2000/000812
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English (en)
French (fr)
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WO2000060670A2 (de
Inventor
Benno Weis
Dethard Peters
Heinz Mitlehner
Original Assignee
Siced Elect Dev Gmbh & Co Kg
Benno Weis
Dethard Peters
Heinz Mitlehner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siced Elect Dev Gmbh & Co Kg, Benno Weis, Dethard Peters, Heinz Mitlehner filed Critical Siced Elect Dev Gmbh & Co Kg
Priority to EP00926684A priority Critical patent/EP1177576A2/de
Priority to JP2000610070A priority patent/JP2002541668A/ja
Publication of WO2000060670A2 publication Critical patent/WO2000060670A2/de
Publication of WO2000060670A3 publication Critical patent/WO2000060670A3/de
Priority to US09/968,660 priority patent/US20020070412A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/7602—Making of isolation regions between components between components manufactured in an active substrate comprising SiC compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/7605—Making of isolation regions between components between components manufactured in an active substrate comprising AIII BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1602—Diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

Die Halbleitervorrichtung (100) enthält ein laterales Leistungselement (50). Das Leistungselement (50) ist innerhalb einer Halbleiterschicht (20) aus einem Halbleitermaterial mit einem Bandabstand von mindestens 2 eV angeordnet und seitlich durch einen Graben (30) in der Halbleiterschicht (20) begrenzt. Die Halbleiterschicht (20) ist auf einem Substrat (10) mit einer größeren Wärmeleitfähigkeit als der von Silicium angeordnet und elektrisch gegenüber einer der Halbleiterschicht (20) abgewandten Substratoberfläche (11) isoliert. Damit ergibt sich eine integrationsfähige Halbleitervorrichtung (100) für eine hohe Sperrspannung und eine hohe Schaltfrequenz.
PCT/DE2000/000812 1999-03-31 2000-03-16 Integrierte halbleitervorrichtung mit einem lateralen leistungselement WO2000060670A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP00926684A EP1177576A2 (de) 1999-03-31 2000-03-16 Integrierte halbleitervorrichtung mit einem lateralen leistungselement
JP2000610070A JP2002541668A (ja) 1999-03-31 2000-03-16 横型パワー素子を有する集積半導体装置
US09/968,660 US20020070412A1 (en) 1999-03-31 2001-10-01 Integrated semiconductor device having a lateral power element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19914803 1999-03-31
DE19914803.1 1999-03-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US09/968,660 Continuation US20020070412A1 (en) 1999-03-31 2001-10-01 Integrated semiconductor device having a lateral power element

Publications (2)

Publication Number Publication Date
WO2000060670A2 WO2000060670A2 (de) 2000-10-12
WO2000060670A3 true WO2000060670A3 (de) 2001-07-26

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PCT/DE2000/000812 WO2000060670A2 (de) 1999-03-31 2000-03-16 Integrierte halbleitervorrichtung mit einem lateralen leistungselement

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US (1) US20020070412A1 (de)
EP (1) EP1177576A2 (de)
JP (1) JP2002541668A (de)
WO (1) WO2000060670A2 (de)

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US7589007B2 (en) * 1999-06-02 2009-09-15 Arizona Board Of Regents For And On Behalf Of Arizona State University MESFETs integrated with MOSFETs on common substrate and methods of forming the same
AU2002246934A1 (en) * 2001-01-03 2002-07-16 Mississippi State University Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, high-power applications
US6555883B1 (en) * 2001-10-29 2003-04-29 Power Integrations, Inc. Lateral power MOSFET for high switching speeds
US6900477B1 (en) * 2001-12-07 2005-05-31 The United States Of America As Represented By The Secretary Of The Army Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor and an article of manufacture
US6835619B2 (en) * 2002-08-08 2004-12-28 Micron Technology, Inc. Method of forming a memory transistor comprising a Schottky contact
DE102004041556B4 (de) * 2004-08-27 2007-09-20 Infineon Technologies Ag Laterale Schottky-Diode und Verfahren zu ihrer Herstellung
US8017978B2 (en) * 2006-03-10 2011-09-13 International Rectifier Corporation Hybrid semiconductor device
JP5214154B2 (ja) * 2007-01-19 2013-06-19 住友電気工業株式会社 プリント配線板およびその製造方法
JP2009164460A (ja) * 2008-01-09 2009-07-23 Renesas Technology Corp 半導体装置
JP5017303B2 (ja) * 2009-03-25 2012-09-05 株式会社東芝 半導体装置
US20100308340A1 (en) * 2009-06-04 2010-12-09 General Electric Company Semiconductor device having a buried channel
JP5435286B2 (ja) 2009-06-24 2014-03-05 株式会社デンソー 駆動装置
JP5365872B2 (ja) 2009-06-24 2013-12-11 株式会社デンソー 駆動装置
JP4985757B2 (ja) * 2009-12-25 2012-07-25 株式会社デンソー 炭化珪素半導体装置
JP5056883B2 (ja) 2010-03-26 2012-10-24 サンケン電気株式会社 半導体装置
JP5167323B2 (ja) * 2010-09-30 2013-03-21 トヨタ自動車株式会社 半導体装置
JP5672500B2 (ja) * 2011-10-18 2015-02-18 トヨタ自動車株式会社 半導体装置
US20150097328A1 (en) * 2013-10-08 2015-04-09 Win Semiconductors Corp. Wafer holding structure
KR101964153B1 (ko) * 2014-08-28 2019-04-03 한국전기연구원 절연 또는 반절연 ＳｉＣ 기판에 구현된 ＳｉＣ 반도체 소자 및 그 제조 방법
DE102015107680B4 (de) * 2015-05-15 2020-07-30 Infineon Technologies Ag Integrierte Schaltung mit lateralem Feldeffekttransistor mit isoliertem Gate
KR102030465B1 (ko) * 2018-04-18 2019-10-10 현대오트론 주식회사 레터럴 타입의 전력 반도체 소자
JP7210979B2 (ja) * 2018-09-28 2023-01-24 株式会社豊田中央研究所 窒化物半導体装置および窒化物半導体装置の製造方法
JP7411465B2 (ja) * 2020-03-18 2024-01-11 日産自動車株式会社 半導体装置

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DE19638620A1 (de) * 1996-09-20 1998-04-02 Siemens Ag Speicherladungsarme, selbstgeführte Stromrichterschaltung
WO1998059374A2 (en) * 1997-06-23 1998-12-30 Cooper James Albert Jr Insulated gate power semiconductor device having a semi-insulating semiconductor substrate

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Also Published As

Publication number Publication date
US20020070412A1 (en) 2002-06-13
WO2000060670A2 (de) 2000-10-12
EP1177576A2 (de) 2002-02-06
JP2002541668A (ja) 2002-12-03

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