KR970701930A - 높은 래치-업 저항을 가진 실리콘 탄화물을 기초로 한 mis구조물(silicon carbide-based mis structure with high latch-up resistance) - Google Patents

높은 래치-업 저항을 가진 실리콘 탄화물을 기초로 한 mis구조물(silicon carbide-based mis structure with high latch-up resistance)

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KR970701930A
KR970701930A KR1019960704867A KR19960704867A KR970701930A KR 970701930 A KR970701930 A KR 970701930A KR 1019960704867 A KR1019960704867 A KR 1019960704867A KR 19960704867 A KR19960704867 A KR 19960704867A KR 970701930 A KR970701930 A KR 970701930A
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structure according
mis structure
base
source
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하인츠 미틀레너
디트리히 슈테파니
예뇌 티하니
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퀼, 노르트만
지멘스 악티엔게젤샤프트
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Publication of KR970701930A publication Critical patent/KR970701930A/ko

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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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Abstract

MIS 구조물을 드리프트 구역(1), 드리프트 구역(1)의 표면에 배치된 베이스 구역(3), 베이스 구역(3)내로 이온 주입된 n+소오스 구역(2), 베이스 구역(3)과 소오스 구역(2)을 단락시키는 소오스 전극(S), 및 절연체 구역(5)을 통해 채널 구역(32)의 전기 저항을 제어하기 위한 게이트 전극(G)을 포함한다. 베이스 구역(3)은 전체 소오스 구역(2) 아래 이온 주입된 p+부분 구역(33) 내에서 채널 구역(32)에서 보다 많이 도핑된다.

Description

높은 래치-업 저항을 가진 실리콘 탄화물을 기초로 한 MIS 구조물(SILICON CARBIDE-BASED MIS STRUCTURE WITH HIGH LATCH-UP RESISTANCE)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 n 드리프트 구역 내에 이온 주입된 p 베이스 구역의 이온 주입된 n+소오스 구역 아래 연장된 이온 주입된 p+부분 구역을 가진 평면의 MIS 구조물의 단면도이다.

Claims (18)

  1. a) 적어도 하나의 드리프트 구역(1), b) 드리프트 구역(1)의 표면(10)에 또는 표면(10) 내에 배치된 적어도 하나의 베이스 구역(3), c) 베이스 구역(3)에 의해 드리프트 구역(1)으로부터 분리되는 적어도 하나의 소오스 구역(2), d) 소오스 구역(2)과 베이스 구역(3)을 서로 전기적으로 접촉시키는 적어도 하나의 소오스 전극 S), e) 소오스 구역(2)과 드리프트 구역(1)을 연결시키는 베이스 구역(3)의 적어도 하나의 채널 구역(32), 및 f) 채널 구역(32)과 게이트 전극(G) 사이에 배치된 절연체 구역(5)을 통해 채널 구역(32)의 전기 저항을 제어하기 위한 적어도 하나의 게이트 전극(G)을 포함하며, g) 드리프트 구역(1) 및 소오스 구역(2)은 한 도전형의 실리콘 탄화물(SiC)로 형성되고, 베이스 구역(3)은 반대 도전형의 실리콘 탄화물(SiC)로 형성되며, h) 적어도 부분적으로 소오스 구역(2) 아래 연장되며 소오스 구역(2)에 직접 인접한 부분 구역(33)이 베이스 구역(3)에 제공되며, 상기 부분 구역(33)은 베이스 구역(3)의 채널 구역(32) 보다 높은 전하 담체 농도를 갖는 MIS 구조물.
  2. 제1항에 있어서, 베이스 구역(3)의 상기 부분 구역(33)이 전체 소오스 구역(2) 아래 연장되는 것을 특징으로 하는 MIS 구조물.
  3. 제1항 또는 2항에 있어서, 베이스 구역(3)의 상기 부분 구역(33)이 소오스 전극(S)에 까지 연장되는 것을 특징으로 하는 MIS 구조물.
  4. 제1항 내지 3항 중 어느 한 항에 있어서, 베이스 구역(3)의 상기 부분 구역(33)이 도핑 재료 입자의 이온 주입에 의해 형성되는 것을 특징으로 하는 MIS 구조물.
  5. 전술한 항들 중 어느 한 항에 있어서, 베이스 구역(3)의 상기 부분구역(33)이 알루미늄(a1)으로 도핑되는 것을 특징으로 하는 MIS 구조물.
  6. 전술한 항들 중 어느 한 항에 있어서, 베이스 구역(3)의 적어도 채널구역(32)이 붕소(B)로 도핑되는 것을 특징으로 하는 MIS 구조물.
  7. 전술한 항 중 어느 한 항에 있어서, 베이스 구역(3)의 드리프트 구역(1)에 인접한 천이 구역(34)에서 그것의 채널 영역(32)에서 보다 높은 전하 담체 농도를 갖는 것을 특징으로 하는 MIS 구조물.
  8. 제7항에 있어서, 베이스 구역(3)의 천이 구역(34)이 베이스 구역(3) 내로의 도핑 재료 입자의 이온 주입에 의해 형성되는 것을 특징으로 하는 MIS 구조물.
  9. 제7항 또는 8항에 있어서, 베이스 구역(3)의 천이 구역(34)이 붕소(B)로 도핑되는 것을 특징으로 하는 MIS 구조물.
  10. 전술한 항들 중 어느 한 항에 있어서, 소오스 구역(2)이 베이스 구역(3)내로 도핑 재료 입자의 이온 주입에 의해 형성되는 것을 특징으로 하는 MIS 구조물.
  11. 전술한 항들 중 어느 한 항에 있어서, 소오스 구역(2)이 질소(N)로 도핑되는 것을 특징으로 하는 MIS 구조물.
  12. 전술한 항들 중 어느 한 항에 있어서, 드리프트 구역(1)이 그것의 표면(10)으로부터 떨어진 측면에서 반도체 기판(8) 상에 배치되는 것을 특징으로 하는 MIS 구조물.
  13. 제12항에 있어서, 반도체 기판(8)이 드리프트 구역(1)보다 높은 전하 담체 농도를 갖는 것을 특징으로 하는 MIS 구조물.
  14. 제12항 또는 13항에 있어서, 반도체 기판(8)이 드리프트 구역(1)과 동일한 도전형인 것을 특징으로 하는 MIS 구조물.
  15. 제12항 또는 13항에 있어서, 반도체 기판(8)이 드리프트 구역(1)과 반대 도전형인 것을 특징으로 하는 MIS 구조물.
  16. 제12항 내지 15항 중 어느 한 항에 있어서, 드리프트 구역(1)으로부터 떨어진 반도체 기판(8)의 표면에 드레인 전극(D)에 배치되는 것을 특징으로 하는 MIS 구조물.
  17. 전술한 항들 중 어느 한 항에 있어서, 절연체 구역(5)이 산화물로 형성되는 것을 특징으로 하는 MIS 구조물.
  18. 제17항에 있어서, 절연체 구역(5)의 산화물이 열에 의해 형성되는 것을 특징으로 하는 MIS 구조물.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960704867A 1994-03-04 1995-02-24 높은 래치-업 저항을 가진 실리콘 탄화물을 기초로 한 mis구조물(silicon carbide-based mis structure with high latch-up resistance) KR970701930A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP94103325 1994-03-04
EP94103325.0 1994-03-04
PCT/EP1995/000679 WO1995024055A1 (de) 1994-03-04 1995-02-24 Mis-struktur auf siliciumcarbid-basis mit hoher latch-up-festigkeit

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KR970701930A true KR970701930A (ko) 1997-04-12

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EP (1) EP0748520B1 (ko)
JP (1) JP3022598B2 (ko)
KR (1) KR970701930A (ko)
DE (1) DE59504562D1 (ko)
TW (1) TW260827B (ko)
WO (1) WO1995024055A1 (ko)

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JPH09503626A (ja) 1997-04-08
TW260827B (ko) 1995-10-21
JP3022598B2 (ja) 2000-03-21
EP0748520B1 (de) 1998-12-16
WO1995024055A1 (de) 1995-09-08
EP0748520A1 (de) 1996-12-18
DE59504562D1 (de) 1999-01-28

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