EP1313147A3 - Power MOSFET device - Google Patents

Power MOSFET device Download PDF

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Publication number
EP1313147A3
EP1313147A3 EP02001174A EP02001174A EP1313147A3 EP 1313147 A3 EP1313147 A3 EP 1313147A3 EP 02001174 A EP02001174 A EP 02001174A EP 02001174 A EP02001174 A EP 02001174A EP 1313147 A3 EP1313147 A3 EP 1313147A3
Authority
EP
European Patent Office
Prior art keywords
conductivity type
layer
high resistance
epitaxial layer
power mosfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP02001174A
Other languages
German (de)
French (fr)
Other versions
EP1313147A2 (en
Inventor
Yusuke Intel. Prop. Div. K. K. Toshiba Kawaguchi
Norio Intel. Prop. Div. K. K. Toshiba Yasuhara
Syotaro Intel. Prop. Div. K. K. Toshiba Ono
Shinichi Intel. Prop. Div. K. K. Toshiba Hodama
Akio Intel. Prop. Div. K. K. Toshiba Nakagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of EP1313147A2 publication Critical patent/EP1313147A2/en
Publication of EP1313147A3 publication Critical patent/EP1313147A3/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
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    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
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    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
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    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H01L29/1045—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface the doping structure being parallel to the channel length, e.g. DMOS like
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    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
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    • H01L29/42312—Gate electrodes for field effect devices
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    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
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    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A power MOSFET device comprising a low resistance substrate (11) of the first conductivity type, a high resistance epitaxial layer (12) of the first conductivity type formed on the low resistance substrate, a base layer (13a) of the second conductivity type formed in a surface region of the high resistance epitaxial layer, a source region (14a) of the first conductivity type formed in a surface region of the base layer, a gate insulating film (17a) formed on the surface of the base layer so as to contact the source region, a gate electrode (16a) formed on the gate insulating film, and an LDD layer (18) of the first conductivity type formed on the surface of the high resistance epitaxial layer oppositely relative to the source region and the gate electrode, wherein the LDD layer (18) and the low resistance substrate (11) are connected to each other by the high resistance epitaxial layer.
EP02001174A 2001-11-14 2002-01-28 Power MOSFET device Withdrawn EP1313147A3 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001349152 2001-11-14
JP2001349152A JP4088063B2 (en) 2001-11-14 2001-11-14 Power MOSFET device

Publications (2)

Publication Number Publication Date
EP1313147A2 EP1313147A2 (en) 2003-05-21
EP1313147A3 true EP1313147A3 (en) 2008-01-02

Family

ID=19161863

Family Applications (1)

Application Number Title Priority Date Filing Date
EP02001174A Withdrawn EP1313147A3 (en) 2001-11-14 2002-01-28 Power MOSFET device

Country Status (3)

Country Link
US (2) US6720618B2 (en)
EP (1) EP1313147A3 (en)
JP (1) JP4088063B2 (en)

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US7589378B2 (en) * 2005-07-13 2009-09-15 Texas Instruments Lehigh Valley Incorporated Power LDMOS transistor
US7868394B2 (en) * 2005-08-09 2011-01-11 United Microelectronics Corp. Metal-oxide-semiconductor transistor and method of manufacturing the same
SG130099A1 (en) * 2005-08-12 2007-03-20 Ciclon Semiconductor Device Co Power ldmos transistor
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ITTO20070163A1 (en) 2007-03-02 2008-09-03 St Microelectronics Srl PROCESS OF MANUFACTURING A MISFET VERTICAL CONDUCTIVE DEVICE WITH DIELECTRIC STRUCTURE OF DOOR OF DIFFERENTIAL THICKNESS AND MISFET DEVICE WITH A VERTICAL CONDUCTION MADE THESE
US7745846B2 (en) * 2008-01-15 2010-06-29 Ciclon Semiconductor Device Corp. LDMOS integrated Schottky diode
US20090267145A1 (en) * 2008-04-23 2009-10-29 Ciclon Semiconductor Device Corp. Mosfet device having dual interlevel dielectric thickness and method of making same
CN102187463A (en) * 2008-10-17 2011-09-14 松下电器产业株式会社 Semiconductor device and method for manufacturing same
US8039897B2 (en) * 2008-12-19 2011-10-18 Fairchild Semiconductor Corporation Lateral MOSFET with substrate drain connection
US7936007B2 (en) * 2009-04-16 2011-05-03 Fairchild Semiconductor Corporation LDMOS with self aligned vertical LDD backside drain
US9257517B2 (en) * 2010-11-23 2016-02-09 Microchip Technology Incorporated Vertical DMOS-field effect transistor
US8796745B2 (en) 2011-07-05 2014-08-05 Texas Instruments Incorporated Monolithically integrated active snubber
US9059306B2 (en) * 2011-10-11 2015-06-16 Maxim Integrated Products, Inc. Semiconductor device having DMOS integration
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JP6514519B2 (en) * 2015-02-16 2019-05-15 ルネサスエレクトロニクス株式会社 Semiconductor device manufacturing method
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US7061048B2 (en) 2006-06-13
EP1313147A2 (en) 2003-05-21
US20040164350A1 (en) 2004-08-26
US6720618B2 (en) 2004-04-13
JP4088063B2 (en) 2008-05-21
US20030089947A1 (en) 2003-05-15

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