SG130099A1 - Power ldmos transistor - Google Patents
Power ldmos transistorInfo
- Publication number
- SG130099A1 SG130099A1 SG200604924-1A SG2006049241A SG130099A1 SG 130099 A1 SG130099 A1 SG 130099A1 SG 2006049241 A SG2006049241 A SG 2006049241A SG 130099 A1 SG130099 A1 SG 130099A1
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- region
- channel region
- trench
- insulating layer
- Prior art date
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
A LDMOS transistor comprises a trench formed through the epitaxial layer at least to the top surface of the substrate, the trench having a bottom surface and a sidewall contacting the source region and the portion of the channel region extending under the source region. A first insulating layer is formed over the upper surface and sidewall surfaces of the conductive gate. A continuous layer of conductive material forming a source contact and a gate shield electrode is formed along the bottom surface and the sidewall of the trench and over the first insulating layer to cover the top and sidewall surfaces of the conductive gate. A second insulating layer is formed over an active area of the transistor, including over the continuous layer of conductive material and filling the trench. A drain electrode can extend over the second insulating layer to substantially cover the active area.A laterally diffused metal- oxide-semiconductor (LDMOS) transistor device is also provided including a doped substrate having an epitaxial layer thereover having source and drain implant regions and body and lightly doped drain regions formed therein. The channel region and lightly doped drain regions are doped to a depth to abut the top surface of the substrate. In alternative embodiments, a buffer region of the second conductivity type and having dopant concentration greater than or equal to about the channel region is formed over the top surface of the substrate between the top surface of the substrate and the channel region and lightly doped drain region, wherein the channel region and lightly doped drain regions are doped to a depth to abut the buffer region.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/202,968 US7235845B2 (en) | 2005-08-12 | 2005-08-12 | Power LDMOS transistor |
US11/202,981 US7420247B2 (en) | 2005-08-12 | 2005-08-12 | Power LDMOS transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
SG130099A1 true SG130099A1 (en) | 2007-03-20 |
Family
ID=38787693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200604924-1A SG130099A1 (en) | 2005-08-12 | 2006-07-21 | Power ldmos transistor |
Country Status (2)
Country | Link |
---|---|
SG (1) | SG130099A1 (en) |
TW (2) | TWI412134B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114823856A (en) * | 2022-04-26 | 2022-07-29 | 电子科技大学 | High-voltage integrated power semiconductor device and manufacturing method thereof |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7230302B2 (en) | 2004-01-29 | 2007-06-12 | Enpirion, Inc. | Laterally diffused metal oxide semiconductor device and method of forming the same |
CN103855134A (en) | 2012-11-30 | 2014-06-11 | 英力股份有限公司 | Apparatus including a semiconductor device coupled to a decoupling device |
CN103280456B (en) * | 2013-04-28 | 2016-01-27 | 苏州市职业大学 | planar power MOS device |
US9673192B1 (en) | 2013-11-27 | 2017-06-06 | Altera Corporation | Semiconductor device including a resistor metallic layer and method of forming the same |
US9536938B1 (en) | 2013-11-27 | 2017-01-03 | Altera Corporation | Semiconductor device including a resistor metallic layer and method of forming the same |
US10020739B2 (en) | 2014-03-27 | 2018-07-10 | Altera Corporation | Integrated current replicator and method of operating the same |
US10103627B2 (en) | 2015-02-26 | 2018-10-16 | Altera Corporation | Packaged integrated circuit including a switch-mode regulator and method of forming the same |
CN108172621A (en) * | 2018-01-19 | 2018-06-15 | 矽力杰半导体技术(杭州)有限公司 | Ldmos transistor and its manufacturing method |
TW202318648A (en) * | 2021-07-07 | 2023-05-01 | 美商天工方案公司 | Improved body contact fet |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6297533B1 (en) * | 1997-12-04 | 2001-10-02 | The Whitaker Corporation | LDMOS structure with via grounded source |
KR100289049B1 (en) * | 1997-12-17 | 2001-10-24 | 정선종 | Power device having double field plate structure |
US6048772A (en) * | 1998-05-04 | 2000-04-11 | Xemod, Inc. | Method for fabricating a lateral RF MOS device with an non-diffusion source-backside connection |
EP1148555A1 (en) * | 2000-04-21 | 2001-10-24 | STMicroelectronics S.r.l. | RESURF LDMOS field-effect transistor |
EP1187220A3 (en) * | 2000-09-11 | 2007-10-10 | Kabushiki Kaisha Toshiba | MOS field effect transistor with reduced on-resistance |
US6677641B2 (en) * | 2001-10-17 | 2004-01-13 | Fairchild Semiconductor Corporation | Semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
US6600182B2 (en) * | 2001-09-26 | 2003-07-29 | Vladimir Rumennik | High current field-effect transistor |
JP4088063B2 (en) * | 2001-11-14 | 2008-05-21 | 株式会社東芝 | Power MOSFET device |
US6521923B1 (en) * | 2002-05-25 | 2003-02-18 | Sirenza Microdevices, Inc. | Microwave field effect transistor structure on silicon carbide substrate |
CA2387664C (en) * | 2002-06-04 | 2005-04-12 | Denis Courtemanche | Adjustable marker |
US6727127B1 (en) * | 2002-11-21 | 2004-04-27 | Cree, Inc. | Laterally diffused MOS transistor (LDMOS) and method of making same |
US7138690B2 (en) * | 2003-07-21 | 2006-11-21 | Agere Systems Inc. | Shielding structure for use in a metal-oxide-semiconductor device |
US7005703B2 (en) * | 2003-10-17 | 2006-02-28 | Agere Systems Inc. | Metal-oxide-semiconductor device having improved performance and reliability |
SE0302809D0 (en) * | 2003-10-24 | 2003-10-24 | Infineon Technologies Ag | High frequency power transistor device, integrated circuit, and fabrication method thereof |
US6890804B1 (en) * | 2003-11-21 | 2005-05-10 | Agere Systems, Inc. | Metal-oxide-semiconductor device formed in silicon-on-insulator |
-
2006
- 2006-07-21 SG SG200604924-1A patent/SG130099A1/en unknown
- 2006-08-04 TW TW100143639A patent/TWI412134B/en active
- 2006-08-04 TW TW95128758A patent/TWI412128B/en active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114823856A (en) * | 2022-04-26 | 2022-07-29 | 电子科技大学 | High-voltage integrated power semiconductor device and manufacturing method thereof |
CN114823856B (en) * | 2022-04-26 | 2023-10-27 | 电子科技大学 | High-voltage integrated power semiconductor device and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
TW201225298A (en) | 2012-06-16 |
TWI412134B (en) | 2013-10-11 |
TWI412128B (en) | 2013-10-11 |
TW200723532A (en) | 2007-06-16 |
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