SE9500013D0 - Semiconductor device having a passivation layer - Google Patents
Semiconductor device having a passivation layerInfo
- Publication number
- SE9500013D0 SE9500013D0 SE9500013A SE9500013A SE9500013D0 SE 9500013 D0 SE9500013 D0 SE 9500013D0 SE 9500013 A SE9500013 A SE 9500013A SE 9500013 A SE9500013 A SE 9500013A SE 9500013 D0 SE9500013 D0 SE 9500013D0
- Authority
- SE
- Sweden
- Prior art keywords
- passivation layer
- layer
- semiconductor device
- sic
- edge surface
- Prior art date
Links
- 238000002161 passivation Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000463 material Substances 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000002178 crystalline material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
- H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9500013A SE9500013D0 (sv) | 1995-01-03 | 1995-01-03 | Semiconductor device having a passivation layer |
US08/436,489 US5650638A (en) | 1995-01-03 | 1995-05-08 | Semiconductor device having a passivation layer |
JP8520906A JPH10511812A (ja) | 1995-01-03 | 1995-12-29 | パッシベーション層を有する半導体デバイス |
EP95942822A EP0801816A1 (en) | 1995-01-03 | 1995-12-29 | Semiconductor device having a passivation layer |
PCT/SE1995/001596 WO1996021246A1 (en) | 1995-01-03 | 1995-12-29 | Semiconductor device having a passivation layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9500013A SE9500013D0 (sv) | 1995-01-03 | 1995-01-03 | Semiconductor device having a passivation layer |
Publications (1)
Publication Number | Publication Date |
---|---|
SE9500013D0 true SE9500013D0 (sv) | 1995-01-03 |
Family
ID=20396734
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE9500013A SE9500013D0 (sv) | 1995-01-03 | 1995-01-03 | Semiconductor device having a passivation layer |
Country Status (5)
Country | Link |
---|---|
US (1) | US5650638A (sv) |
EP (1) | EP0801816A1 (sv) |
JP (1) | JPH10511812A (sv) |
SE (1) | SE9500013D0 (sv) |
WO (1) | WO1996021246A1 (sv) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5967795A (en) * | 1995-08-30 | 1999-10-19 | Asea Brown Boveri Ab | SiC semiconductor device comprising a pn junction with a voltage absorbing edge |
US5763905A (en) * | 1996-07-09 | 1998-06-09 | Abb Research Ltd. | Semiconductor device having a passivation layer |
TW508470B (en) * | 1997-05-09 | 2002-11-01 | Hitachi Ltd | Liquid crystal display device |
US5932894A (en) * | 1997-06-26 | 1999-08-03 | Abb Research Ltd. | SiC semiconductor device comprising a pn junction |
SE9903242D0 (sv) | 1999-09-13 | 1999-09-13 | Acreo Ab | A semiconductor device |
SE9904710L (sv) * | 1999-12-22 | 2001-06-23 | Abb Ab | Halvledaranordning |
JP4731706B2 (ja) * | 2001-03-06 | 2011-07-27 | 三菱電機株式会社 | 半導体素子 |
JP4869489B2 (ja) * | 2001-03-28 | 2012-02-08 | 三菱電機株式会社 | 半導体デバイス |
US6599796B2 (en) * | 2001-06-29 | 2003-07-29 | Hewlett-Packard Development Company, L.P. | Apparatus and fabrication process to reduce crosstalk in pirm memory array |
US9515135B2 (en) * | 2003-01-15 | 2016-12-06 | Cree, Inc. | Edge termination structures for silicon carbide devices |
WO2005050257A2 (en) * | 2003-11-18 | 2005-06-02 | Halliburton Energy Services, Inc. | High temperature imaging device |
US7855401B2 (en) * | 2005-06-29 | 2010-12-21 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
US7598576B2 (en) * | 2005-06-29 | 2009-10-06 | Cree, Inc. | Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices |
US7525122B2 (en) * | 2005-06-29 | 2009-04-28 | Cree, Inc. | Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides |
JP5653109B2 (ja) * | 2010-07-26 | 2015-01-14 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
US9991399B2 (en) | 2012-10-04 | 2018-06-05 | Cree, Inc. | Passivation structure for semiconductor devices |
US8994073B2 (en) | 2012-10-04 | 2015-03-31 | Cree, Inc. | Hydrogen mitigation schemes in the passivation of advanced devices |
US9812338B2 (en) | 2013-03-14 | 2017-11-07 | Cree, Inc. | Encapsulation of advanced devices using novel PECVD and ALD schemes |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3629011A (en) * | 1967-09-11 | 1971-12-21 | Matsushita Electric Ind Co Ltd | Method for diffusing an impurity substance into silicon carbide |
US4297783A (en) * | 1979-01-30 | 1981-11-03 | Bell Telephone Laboratories, Incorporated | Method of fabricating GaAs devices utilizing a semi-insulating layer of AlGaAs in combination with an overlying masking layer |
GB2071411B (en) * | 1980-03-07 | 1983-12-21 | Philips Electronic Associated | Passivating p-n junction devices |
DD221598A1 (de) * | 1983-12-30 | 1985-04-24 | Adw Ddr Inst Optik | Passivierungsschicht fuer halbleiterbauelemente auf gaas-basis |
US4656101A (en) * | 1984-11-07 | 1987-04-07 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device with a protective film |
US4824789B1 (en) * | 1986-10-10 | 1996-08-13 | Minnesota Mining & Mfg | Gas sensor |
US5087576A (en) * | 1987-10-26 | 1992-02-11 | North Carolina State University | Implantation and electrical activation of dopants into monocrystalline silicon carbide |
US4824798A (en) * | 1987-11-05 | 1989-04-25 | Xerox Corporation | Method of introducing impurity species into a semiconductor structure from a deposited source |
US5061972A (en) * | 1988-12-14 | 1991-10-29 | Cree Research, Inc. | Fast recovery high temperature rectifying diode formed in silicon carbide |
JP2650744B2 (ja) * | 1988-12-28 | 1997-09-03 | シャープ株式会社 | 発光ダイオード |
JPH0766971B2 (ja) * | 1989-06-07 | 1995-07-19 | シャープ株式会社 | 炭化珪素半導体装置 |
US5183684A (en) * | 1989-11-20 | 1993-02-02 | Dow Corning Corporation | Single and multilayer coatings containing aluminum nitride |
DE4323814A1 (de) * | 1992-09-25 | 1994-03-31 | Siemens Ag | MIS-Feldeffekttransistor |
US5399883A (en) * | 1994-05-04 | 1995-03-21 | North Carolina State University At Raleigh | High voltage silicon carbide MESFETs and methods of fabricating same |
US5449925A (en) * | 1994-05-04 | 1995-09-12 | North Carolina State University | Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices |
-
1995
- 1995-01-03 SE SE9500013A patent/SE9500013D0/sv unknown
- 1995-05-08 US US08/436,489 patent/US5650638A/en not_active Expired - Lifetime
- 1995-12-29 EP EP95942822A patent/EP0801816A1/en not_active Withdrawn
- 1995-12-29 WO PCT/SE1995/001596 patent/WO1996021246A1/en not_active Application Discontinuation
- 1995-12-29 JP JP8520906A patent/JPH10511812A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US5650638A (en) | 1997-07-22 |
JPH10511812A (ja) | 1998-11-10 |
WO1996021246A1 (en) | 1996-07-11 |
EP0801816A1 (en) | 1997-10-22 |
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