DE29504629U1 - Siliciumcarbid-Schottky-Diode - Google Patents

Siliciumcarbid-Schottky-Diode

Info

Publication number
DE29504629U1
DE29504629U1 DE29504629U DE29504629U DE29504629U1 DE 29504629 U1 DE29504629 U1 DE 29504629U1 DE 29504629 U DE29504629 U DE 29504629U DE 29504629 U DE29504629 U DE 29504629U DE 29504629 U1 DE29504629 U1 DE 29504629U1
Authority
DE
Germany
Prior art keywords
silicon carbide
schottky diode
carbide schottky
diode
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE29504629U
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Publication of DE29504629U1 publication Critical patent/DE29504629U1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
DE29504629U 1994-09-26 1995-03-17 Siliciumcarbid-Schottky-Diode Expired - Lifetime DE29504629U1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6228560A JPH0897441A (ja) 1994-09-26 1994-09-26 炭化けい素ショットキーダイオードの製造方法

Publications (1)

Publication Number Publication Date
DE29504629U1 true DE29504629U1 (de) 1995-06-29

Family

ID=16878292

Family Applications (1)

Application Number Title Priority Date Filing Date
DE29504629U Expired - Lifetime DE29504629U1 (de) 1994-09-26 1995-03-17 Siliciumcarbid-Schottky-Diode

Country Status (3)

Country Link
US (1) US5789311A (de)
JP (1) JPH0897441A (de)
DE (1) DE29504629U1 (de)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998056043A1 (de) * 1997-06-03 1998-12-10 Daimlerchrysler Ag Leistungshalbleiter-bauelement und verfahren zu dessen herstellung
DE19756873A1 (de) * 1997-12-19 1999-07-01 Siemens Ag Elektrische Schaltungsanordnung zur Transformation von magnetischer Feldenergie in elektrische Feldenergie
WO2001011692A1 (de) * 1999-08-06 2001-02-15 Siced Electronics Development Gmbh & Co. Kg Halbleitererzeugnis mit einem schottky-kontakt
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US8653534B2 (en) 2008-05-21 2014-02-18 Cree, Inc. Junction Barrier Schottky diodes with current surge capability
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same

Families Citing this family (45)

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US6028012A (en) * 1996-12-04 2000-02-22 Yale University Process for forming a gate-quality insulating layer on a silicon carbide substrate
SE9700156D0 (sv) * 1997-01-21 1997-01-21 Abb Research Ltd Junction termination for Si C Schottky diode
US6362495B1 (en) 1998-03-05 2002-03-26 Purdue Research Foundation Dual-metal-trench silicon carbide Schottky pinch rectifier
DE19925233A1 (de) * 1998-06-08 1999-12-09 Siemens Ag Halbleiteranordnung mit ohmscher Kontaktierung und Verfahren zur Kontaktierung einer Halbleiteranordnung
EP1064684A1 (de) * 1999-01-15 2001-01-03 Infineon Technologies AG Randabschluss für ein halbleiterbauelement, schottky-diode mit einem randabschluss und verfahren zur herstellung einer schottky-diode
JP4118459B2 (ja) * 1999-07-09 2008-07-16 富士電機デバイステクノロジー株式会社 ショットキーバリアダイオード
FR2803103B1 (fr) * 1999-12-24 2003-08-29 St Microelectronics Sa Diode schottky sur substrat de carbure de silicium
DE10004983C1 (de) * 2000-02-04 2001-09-13 Infineon Technologies Ag Schutzanordnung für Schottky-Diode
DE10022268B4 (de) * 2000-05-08 2005-03-31 Infineon Technologies Ag Halbleiterbauelement mit zwei Halbleiterkörpern in einem gemeinsamen Gehäuse
US6599644B1 (en) * 2000-10-06 2003-07-29 Foundation For Research & Technology-Hellas Method of making an ohmic contact to p-type silicon carbide, comprising titanium carbide and nickel silicide
US6573128B1 (en) 2000-11-28 2003-06-03 Cree, Inc. Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
JP4942255B2 (ja) * 2001-05-08 2012-05-30 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
JP4972842B2 (ja) * 2001-05-11 2012-07-11 富士電機株式会社 半導体装置
FR2832547A1 (fr) * 2001-11-21 2003-05-23 St Microelectronics Sa Procede de realisation d'une diode schottky sur substrat de carbure de silicium
US6693308B2 (en) * 2002-02-22 2004-02-17 Semisouth Laboratories, Llc Power SiC devices having raised guard rings
US7262434B2 (en) 2002-03-28 2007-08-28 Rohm Co., Ltd. Semiconductor device with a silicon carbide substrate and ohmic metal layer
US9515135B2 (en) * 2003-01-15 2016-12-06 Cree, Inc. Edge termination structures for silicon carbide devices
US7026650B2 (en) 2003-01-15 2006-04-11 Cree, Inc. Multiple floating guard ring edge termination for silicon carbide devices
JP4610207B2 (ja) * 2004-02-24 2011-01-12 三洋電機株式会社 半導体装置およびその製造方法
JP4829476B2 (ja) * 2004-03-09 2011-12-07 オンセミコンダクター・トレーディング・リミテッド ショットキーバリアダイオードおよびその製造方法
US20060006394A1 (en) * 2004-05-28 2006-01-12 Caracal, Inc. Silicon carbide Schottky diodes and fabrication method
US7812441B2 (en) 2004-10-21 2010-10-12 Siliconix Technology C.V. Schottky diode with improved surge capability
US7394158B2 (en) * 2004-10-21 2008-07-01 Siliconix Technology C.V. Solderable top metal for SiC device
US9419092B2 (en) * 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
US7834376B2 (en) * 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
US8368165B2 (en) * 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
US7749877B2 (en) * 2006-03-07 2010-07-06 Siliconix Technology C. V. Process for forming Schottky rectifier with PtNi silicide Schottky barrier
US7728403B2 (en) * 2006-05-31 2010-06-01 Cree Sweden Ab Semiconductor device
CN101506989B (zh) * 2006-07-31 2014-02-19 威世-硅尼克斯 用于SiC肖特基二极管的钼势垒金属及制造工艺
JP2008177369A (ja) * 2007-01-18 2008-07-31 Sumitomo Electric Ind Ltd ショットキバリアダイオード
JP2009094392A (ja) * 2007-10-11 2009-04-30 Mitsubishi Electric Corp 炭化珪素半導体装置の製造方法
JP5638739B2 (ja) * 2008-03-07 2014-12-10 富士電機株式会社 半導体装置の製造方法
JP5047133B2 (ja) * 2008-11-19 2012-10-10 昭和電工株式会社 半導体装置の製造方法
JP5598015B2 (ja) * 2010-02-23 2014-10-01 株式会社デンソー ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法
CN102754213B (zh) 2010-02-23 2015-08-05 菅原良孝 半导体装置
JP5106604B2 (ja) * 2010-09-07 2012-12-26 株式会社東芝 半導体装置およびその製造方法
CN103400853A (zh) * 2013-08-01 2013-11-20 电子科技大学 一种碳化硅肖特基势垒二极管及其制作方法
KR102267094B1 (ko) 2013-08-19 2021-06-18 이데미쓰 고산 가부시키가이샤 산화물 반도체 기판 및 쇼트키 배리어 다이오드
KR102226985B1 (ko) 2013-08-19 2021-03-11 이데미쓰 고산 가부시키가이샤 산화물 반도체 기판 및 쇼트키 배리어 다이오드
JP6271197B2 (ja) 2013-09-20 2018-01-31 株式会社東芝 半導体装置およびその製造方法
JP2016139698A (ja) * 2015-01-27 2016-08-04 フェニテックセミコンダクター株式会社 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置
US9960247B2 (en) * 2016-01-19 2018-05-01 Ruigang Li Schottky barrier structure for silicon carbide (SiC) power devices
EP3555925B1 (de) * 2016-12-15 2022-01-12 Griffith University Siliciumcarbid-schottky-dioden
CN108565295A (zh) * 2018-02-12 2018-09-21 泰科天润半导体科技（北京）有限公司 一种碳化硅肖特基二极管及其制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6271271A (ja) * 1985-09-24 1987-04-01 Sharp Corp 炭化珪素半導体の電極構造
JP2631369B2 (ja) * 1987-01-19 1997-07-16 三菱電機株式会社 半導体装置
JPH01161760A (ja) * 1987-12-18 1989-06-26 Fujitsu Ltd 半導体装置の製造方法
US5270252A (en) * 1988-10-25 1993-12-14 United States Of America As Represented By The Secretary Of The Navy Method of forming platinum and platinum silicide schottky contacts on beta-silicon carbide
JP2509713B2 (ja) * 1989-10-18 1996-06-26 シャープ株式会社 炭化珪素半導体装置およびその製造方法
JPH0548145A (ja) * 1991-08-07 1993-02-26 Toshiba Corp 光半導体装置およびその製造方法
JPH04317374A (ja) * 1991-04-16 1992-11-09 Sanyo Electric Co Ltd ＳｉＣデバイスの電極形成方法
US5221638A (en) * 1991-09-10 1993-06-22 Sanken Electric Co., Ltd. Method of manufacturing a Schottky barrier semiconductor device
JPH05335348A (ja) * 1992-05-29 1993-12-17 Toshiba Corp 半導体装置
US5389799A (en) * 1992-06-12 1995-02-14 Kabushiki Kaisha Toshiba Semiconductor device
JPH0669428A (ja) * 1992-08-20 1994-03-11 Canon Inc 半導体装置及びその製造方法
JP3238498B2 (ja) * 1992-09-14 2001-12-17 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 固体影像記録装置
US5397717A (en) * 1993-07-12 1995-03-14 Motorola, Inc. Method of fabricating a silicon carbide vertical MOSFET
JP3085078B2 (ja) * 1994-03-04 2000-09-04 富士電機株式会社 炭化けい素電子デバイスの製造方法

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998056043A1 (de) * 1997-06-03 1998-12-10 Daimlerchrysler Ag Leistungshalbleiter-bauelement und verfahren zu dessen herstellung
US6501145B1 (en) 1997-06-03 2002-12-31 Daimlerchrysler Ag Semiconductor component and method for producing the same
US6949401B2 (en) 1997-06-03 2005-09-27 Daimler Chrysler Ag Semiconductor component and method for producing the same
DE19756873A1 (de) * 1997-12-19 1999-07-01 Siemens Ag Elektrische Schaltungsanordnung zur Transformation von magnetischer Feldenergie in elektrische Feldenergie
WO2001011692A1 (de) * 1999-08-06 2001-02-15 Siced Electronics Development Gmbh & Co. Kg Halbleitererzeugnis mit einem schottky-kontakt
US8653534B2 (en) 2008-05-21 2014-02-18 Cree, Inc. Junction Barrier Schottky diodes with current surge capability
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US9595618B2 (en) 2010-03-08 2017-03-14 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US9231122B2 (en) 2011-09-11 2016-01-05 Cree, Inc. Schottky diode
US9865750B2 (en) 2011-09-11 2018-01-09 Cree, Inc. Schottky diode

Also Published As

Publication number Publication date
US5789311A (en) 1998-08-04
JPH0897441A (ja) 1996-04-12

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Legal Events

Date Code Title Description
R207 Utility model specification

Effective date: 19950810

R150 Utility model maintained after payment of first maintenance fee after three years

Effective date: 19980505

R151 Utility model maintained after payment of second maintenance fee after six years

Effective date: 20010420

R152 Utility model maintained after payment of third maintenance fee after eight years

Effective date: 20030408

R071 Expiry of right