SE9700156D0 - Junction termination for Si C Schottky diode - Google Patents

Junction termination for Si C Schottky diode

Info

Publication number
SE9700156D0
SE9700156D0 SE9700156A SE9700156A SE9700156D0 SE 9700156 D0 SE9700156 D0 SE 9700156D0 SE 9700156 A SE9700156 A SE 9700156A SE 9700156 A SE9700156 A SE 9700156A SE 9700156 D0 SE9700156 D0 SE 9700156D0
Authority
SE
Sweden
Prior art keywords
junction
termination
jte
metal contact
edge
Prior art date
Application number
SE9700156A
Other languages
English (en)
Inventor
Mietek Bakowski
Ulf Gustafsson
Christopher I Harris
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE9700156A priority Critical patent/SE9700156D0/sv
Publication of SE9700156D0 publication Critical patent/SE9700156D0/sv
Priority to US08/821,159 priority patent/US5914500A/en
Priority to PCT/SE1998/000082 priority patent/WO1998032178A1/en
Priority to AT98901638T priority patent/ATE396502T1/de
Priority to JP53423398A priority patent/JP5067985B2/ja
Priority to DE69839511T priority patent/DE69839511D1/de
Priority to EP98901638A priority patent/EP0965146B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Light Receiving Elements (AREA)
  • Amplifiers (AREA)
SE9700156A 1997-01-21 1997-01-21 Junction termination for Si C Schottky diode SE9700156D0 (sv)

Priority Applications (7)

Application Number Priority Date Filing Date Title
SE9700156A SE9700156D0 (sv) 1997-01-21 1997-01-21 Junction termination for Si C Schottky diode
US08/821,159 US5914500A (en) 1997-01-21 1997-03-20 Junction termination for SiC Schottky diode
PCT/SE1998/000082 WO1998032178A1 (en) 1997-01-21 1998-01-21 JUNCTION TERMINATION FOR SiC SCHOTTKY DIODE
AT98901638T ATE396502T1 (de) 1997-01-21 1998-01-21 Übergangsabschluss für sic schottkydiode
JP53423398A JP5067985B2 (ja) 1997-01-21 1998-01-21 半導体装置
DE69839511T DE69839511D1 (de) 1997-01-21 1998-01-21 Übergangsabschluss für sic schottkydiode
EP98901638A EP0965146B1 (en) 1997-01-21 1998-01-21 JUNCTION TERMINATION FOR SiC SCHOTTKY DIODE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9700156A SE9700156D0 (sv) 1997-01-21 1997-01-21 Junction termination for Si C Schottky diode

Publications (1)

Publication Number Publication Date
SE9700156D0 true SE9700156D0 (sv) 1997-01-21

Family

ID=20405472

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9700156A SE9700156D0 (sv) 1997-01-21 1997-01-21 Junction termination for Si C Schottky diode

Country Status (7)

Country Link
US (1) US5914500A (sv)
EP (1) EP0965146B1 (sv)
JP (1) JP5067985B2 (sv)
AT (1) ATE396502T1 (sv)
DE (1) DE69839511D1 (sv)
SE (1) SE9700156D0 (sv)
WO (1) WO1998032178A1 (sv)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1036418A2 (de) * 1997-11-24 2000-09-20 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Optimierter randabschluss von halbleiter-bauelementen
US6242784B1 (en) * 1999-06-28 2001-06-05 Intersil Corporation Edge termination for silicon power devices
US6373076B1 (en) 1999-12-07 2002-04-16 Philips Electronics North America Corporation Passivated silicon carbide devices with low leakage current and method of fabricating
FR2803103B1 (fr) * 1999-12-24 2003-08-29 St Microelectronics Sa Diode schottky sur substrat de carbure de silicium
US6717229B2 (en) 2000-01-19 2004-04-06 Fabtech, Inc. Distributed reverse surge guard
US6642558B1 (en) * 2000-03-20 2003-11-04 Koninklijke Philips Electronics N.V. Method and apparatus of terminating a high voltage solid state device
SE0001860D0 (sv) * 2000-05-22 2000-05-22 Abb Ab A semiconductor device
US6362112B1 (en) 2000-11-08 2002-03-26 Fabtech, Inc. Single step etched moat
US6573128B1 (en) 2000-11-28 2003-06-03 Cree, Inc. Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
US6462393B2 (en) 2001-03-20 2002-10-08 Fabtech, Inc. Schottky device
JP4942255B2 (ja) * 2001-05-08 2012-05-30 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
FR2832547A1 (fr) * 2001-11-21 2003-05-23 St Microelectronics Sa Procede de realisation d'une diode schottky sur substrat de carbure de silicium
US6734462B1 (en) 2001-12-07 2004-05-11 The United States Of America As Represented By The Secretary Of The Army Silicon carbide power devices having increased voltage blocking capabilities
CA2381128A1 (en) * 2002-04-09 2003-10-09 Quantiscript Inc. Plasma polymerized electron beam resist
US7026650B2 (en) * 2003-01-15 2006-04-11 Cree, Inc. Multiple floating guard ring edge termination for silicon carbide devices
US9515135B2 (en) * 2003-01-15 2016-12-06 Cree, Inc. Edge termination structures for silicon carbide devices
US20050259368A1 (en) * 2003-11-12 2005-11-24 Ted Letavic Method and apparatus of terminating a high voltage solid state device
US7407837B2 (en) * 2004-01-27 2008-08-05 Fuji Electric Holdings Co., Ltd. Method of manufacturing silicon carbide semiconductor device
WO2005119793A2 (en) * 2004-05-28 2005-12-15 Caracal, Inc. Silicon carbide schottky diodes and fabrication method
TWI278090B (en) * 2004-10-21 2007-04-01 Int Rectifier Corp Solderable top metal for SiC device
US7812441B2 (en) 2004-10-21 2010-10-12 Siliconix Technology C.V. Schottky diode with improved surge capability
US7304363B1 (en) 2004-11-26 2007-12-04 United States Of America As Represented By The Secretary Of The Army Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor device
JP4186919B2 (ja) * 2004-12-07 2008-11-26 三菱電機株式会社 半導体装置
US9419092B2 (en) * 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
US7834376B2 (en) 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
JP4944460B2 (ja) * 2005-03-30 2012-05-30 オンセミコンダクター・トレーディング・リミテッド 半導体装置
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
US7768092B2 (en) * 2005-07-20 2010-08-03 Cree Sweden Ab Semiconductor device comprising a junction having a plurality of rings
CN101258608B (zh) * 2005-09-08 2010-05-19 三菱电机株式会社 半导体装置以及半导体装置的制造方法
JP5068009B2 (ja) * 2005-09-14 2012-11-07 三菱電機株式会社 炭化ケイ素半導体装置
US8368165B2 (en) * 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
US7541660B2 (en) * 2006-04-20 2009-06-02 Infineon Technologies Austria Ag Power semiconductor device
US8192905B2 (en) * 2006-04-20 2012-06-05 Ricoh Company, Ltd. Electrophotographic photoconductor, image forming apparatus, and process cartridge
US9627552B2 (en) * 2006-07-31 2017-04-18 Vishay-Siliconix Molybdenum barrier metal for SiC Schottky diode and process of manufacture
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
US7728402B2 (en) * 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US20080036048A1 (en) * 2006-08-10 2008-02-14 Vishay General Semiconductor Llc Semiconductor junction device having reduced leakage current and method of forming same
EP2052414B1 (en) 2006-08-17 2016-03-30 Cree, Inc. High power insulated gate bipolar transistors
US8835987B2 (en) 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
EP2208230B1 (en) * 2007-11-09 2015-10-21 Cree, Inc. Power semiconductor devices with mesa structures and buffer layers including mesa steps
US9640609B2 (en) * 2008-02-26 2017-05-02 Cree, Inc. Double guard ring edge termination for silicon carbide devices
JP5361861B2 (ja) * 2008-03-17 2013-12-04 三菱電機株式会社 半導体装置
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
JP2008252143A (ja) * 2008-07-17 2008-10-16 Mitsubishi Electric Corp 半導体装置
US8097919B2 (en) * 2008-08-11 2012-01-17 Cree, Inc. Mesa termination structures for power semiconductor devices including mesa step buffers
US8497552B2 (en) 2008-12-01 2013-07-30 Cree, Inc. Semiconductor devices with current shifting regions and related methods
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8637386B2 (en) * 2009-05-12 2014-01-28 Cree, Inc. Diffused junction termination structures for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8629509B2 (en) 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8541787B2 (en) * 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US8803277B2 (en) 2011-02-10 2014-08-12 Cree, Inc. Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same
JP2011135094A (ja) * 2011-02-25 2011-07-07 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
JP6050563B2 (ja) * 2011-02-25 2016-12-21 富士通株式会社 化合物半導体装置及びその製造方法
US9318623B2 (en) 2011-04-05 2016-04-19 Cree, Inc. Recessed termination structures and methods of fabricating electronic devices including recessed termination structures
DE112012001587B4 (de) * 2011-04-05 2017-04-06 Mitsubishi Electric Corporation Halbleitereinrichtung und Verfahren zur Herstellung derselben
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9337268B2 (en) 2011-05-16 2016-05-10 Cree, Inc. SiC devices with high blocking voltage terminated by a negative bevel
US9349797B2 (en) 2011-05-16 2016-05-24 Cree, Inc. SiC devices with high blocking voltage terminated by a negative bevel
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
CN103918079B (zh) 2011-09-11 2017-10-31 科锐 包括具有改进布局的晶体管的高电流密度功率模块
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
JP6384944B2 (ja) * 2012-05-31 2018-09-05 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
DE112013006871T5 (de) * 2013-03-27 2015-12-10 Toyota Jidosha Kabushiki Kaisha Vertikale Halbleitervorrichtung
US9425265B2 (en) 2013-08-16 2016-08-23 Cree, Inc. Edge termination technique for high voltage power devices having a negative feature for an improved edge termination structure
US9960247B2 (en) * 2016-01-19 2018-05-01 Ruigang Li Schottky barrier structure for silicon carbide (SiC) power devices
JP6756125B2 (ja) 2016-03-16 2020-09-16 富士電機株式会社 半導体装置および半導体装置の製造方法
ES2911200T3 (es) * 2016-12-15 2022-05-18 Univ Griffith Diodos de Schottky de carburo de silicio
CN107482050B (zh) * 2017-08-18 2020-02-07 珠海格力电器股份有限公司 一种功率器件的终端结构及其制造方法
US12113101B2 (en) * 2020-07-08 2024-10-08 Semiconductor Components Industries, Llc Method and system of junction termination extension in high voltage semiconductor devices
JP6861914B1 (ja) * 2020-07-08 2021-04-21 三菱電機株式会社 半導体装置及び半導体装置の製造方法
CN112038416B (zh) * 2020-09-15 2021-09-03 西安电子科技大学 基于p型NiO薄膜和斜面终端结构的肖特基二极管及其制作方法
RU206535U1 (ru) * 2021-03-10 2021-09-15 Акционерное общество "ГРУППА КРЕМНИЙ ЭЛ" Тестовая ячейка для контроля качества изготовления диодов шоттки на карбиде кремния
US11955567B2 (en) 2022-02-16 2024-04-09 Leap Semiconductor Corp. Wide-band gap semiconductor device and method of manufacturing the same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2460040A1 (fr) * 1979-06-22 1981-01-16 Thomson Csf Procede pour realiser une diode schottky a tenue en tension amelioree
IT1171402B (it) * 1981-07-20 1987-06-10 Selenia Ind Eletroniche Associ Transistor ad effeto di campo a barriera metallo-semiconduttorre conzona svuotata modificata
IT1214805B (it) * 1984-08-21 1990-01-18 Ates Componenti Elettron Spositivi a semiconduttore con giunprocesso per la fabbricazione di dizioni planari a concentrazione di carica variabile e ad altissima tensione di breakdown
US4648174A (en) * 1985-02-05 1987-03-10 General Electric Company Method of making high breakdown voltage semiconductor device
JPH0620125B2 (ja) * 1989-03-28 1994-03-16 サンケン電気株式会社 半導体装置
US4927772A (en) * 1989-05-30 1990-05-22 General Electric Company Method of making high breakdown voltage semiconductor device
JP3117506B2 (ja) * 1991-09-13 2000-12-18 株式会社日立製作所 半導体整流素子
US5233215A (en) * 1992-06-08 1993-08-03 North Carolina State University At Raleigh Silicon carbide power MOSFET with floating field ring and floating field plate
JP2850694B2 (ja) * 1993-03-10 1999-01-27 株式会社日立製作所 高耐圧プレーナ型半導体装置
US5399883A (en) * 1994-05-04 1995-03-21 North Carolina State University At Raleigh High voltage silicon carbide MESFETs and methods of fabricating same
TW286435B (sv) * 1994-07-27 1996-09-21 Siemens Ag
JPH0883918A (ja) * 1994-09-09 1996-03-26 Sanken Electric Co Ltd 半導体装置
JPH0897441A (ja) * 1994-09-26 1996-04-12 Fuji Electric Co Ltd 炭化けい素ショットキーダイオードの製造方法
US5569937A (en) * 1995-08-28 1996-10-29 Motorola High breakdown voltage silicon carbide transistor

Also Published As

Publication number Publication date
WO1998032178A1 (en) 1998-07-23
ATE396502T1 (de) 2008-06-15
EP0965146B1 (en) 2008-05-21
JP5067985B2 (ja) 2012-11-07
EP0965146A1 (en) 1999-12-22
DE69839511D1 (de) 2008-07-03
US5914500A (en) 1999-06-22
JP2001508950A (ja) 2001-07-03

Similar Documents

Publication Publication Date Title
SE9700156D0 (sv) Junction termination for Si C Schottky diode
WO1997008754A3 (en) SiC semiconductor device comprising a pn junction with a voltage absorbing edge
WO1998002924A3 (en) Sic semiconductor device comprising a pn junction with a voltage absorbing edge
CA2195987C (en) Semiconductor component with junction termination with high blocking effectiveness
WO2002045177A3 (en) Epitaxial edge termination for silicon carbide schottky devices and methods of fabricating silicon carbide devices incorporating same
WO1999000849A3 (en) SiC SEMICONDUCTOR DEVICE COMPRISING A PN-JUNCTION AND A JUNCTION TERMINATION EXTENTION
WO1998002923A3 (en) Depletion region stopper for pn junction in silicon carbide
CA1270931C (en) HEAT-INSENSITIVE THIN-FILM PHOTOELECTRIC CONVERTER WITH AN ANTI-DIFFUSION LAYER
AU4528993A (en) Silicon carbide power mosfet with floating field ring and floating field plate
AU5545894A (en) Power mosfet in silicon carbide
SE9700141D0 (sv) A schottky diode of SiC and a method for production thereof
EP0795911A3 (en) Insulated gate semiconductor device and manufacturing method thereof
WO2000070684A3 (en) Silicon carbide power devices comprising charge coupling regions
EP1033756A3 (en) Semiconductor device having a lightly doped layer and power converter comprising the same
EP0380340A3 (en) Silicon carbide schottky diode and method of making same
EP0074642A2 (en) Low-loss and high-speed diodes
SE9500013D0 (sv) Semiconductor device having a passivation layer
JP3793841B2 (ja) 接合型ｆｅｔ半導体装置
EP1065726A4 (en) SEMICONDUCTOR SWITCHING DEVICE WITH SILICON CARBIDE
EP0660416A1 (en) Semiconductor device with reduced high voltage termination area and high breakdown voltage
US4618871A (en) Schottky power diode
EP0342866A3 (en) Iii-v group compounds semiconductor device schottky contact
KR890004960B1 (ko) 반도체 장치
JPS57126172A (en) Schottky barrier diode
GB2207803A (en) Junction breakdown prevention