JP4944460B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP4944460B2 JP4944460B2 JP2006064619A JP2006064619A JP4944460B2 JP 4944460 B2 JP4944460 B2 JP 4944460B2 JP 2006064619 A JP2006064619 A JP 2006064619A JP 2006064619 A JP2006064619 A JP 2006064619A JP 4944460 B2 JP4944460 B2 JP 4944460B2
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- 239000004065 semiconductor Substances 0.000 title claims description 56
- 238000009792 diffusion process Methods 0.000 claims description 270
- 229910052751 metal Inorganic materials 0.000 claims description 73
- 239000002184 metal Substances 0.000 claims description 73
- 230000004888 barrier function Effects 0.000 claims description 51
- 239000012535 impurity Substances 0.000 claims description 32
- 230000005684 electric field Effects 0.000 claims description 22
- 230000000903 blocking effect Effects 0.000 claims description 10
- 230000015556 catabolic process Effects 0.000 description 25
- 239000000969 carrier Substances 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 15
- 230000008859 change Effects 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 11
- 229910021332 silicide Inorganic materials 0.000 description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 8
- 238000011084 recovery Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 4
- 230000002542 deteriorative effect Effects 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000012141 concentrate Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum silicon copper Chemical compound 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000005685 electric field effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- KMTYGNUPYSXKGJ-UHFFFAOYSA-N [Si+4].[Si+4].[Ni++] Chemical compound [Si+4].[Si+4].[Ni++] KMTYGNUPYSXKGJ-UHFFFAOYSA-N 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61F—FILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
- A61F13/00—Bandages or dressings; Absorbent pads
- A61F13/14—Bandages or dressings; Absorbent pads specially adapted for the breast or abdomen
- A61F13/148—Abdomen bandages or bandaging garments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61F—FILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
- A61F5/00—Orthopaedic methods or devices for non-surgical treatment of bones or joints; Nursing devices; Anti-rape devices
- A61F5/01—Orthopaedic devices, e.g. splints, casts or braces
- A61F5/0102—Orthopaedic devices, e.g. splints, casts or braces specially adapted for correcting deformities of the limbs or for supporting them; Ortheses, e.g. with articulations
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61F—FILTERS IMPLANTABLE INTO BLOOD VESSELS; PROSTHESES; DEVICES PROVIDING PATENCY TO, OR PREVENTING COLLAPSING OF, TUBULAR STRUCTURES OF THE BODY, e.g. STENTS; ORTHOPAEDIC, NURSING OR CONTRACEPTIVE DEVICES; FOMENTATION; TREATMENT OR PROTECTION OF EYES OR EARS; BANDAGES, DRESSINGS OR ABSORBENT PADS; FIRST-AID KITS
- A61F5/00—Orthopaedic methods or devices for non-surgical treatment of bones or joints; Nursing devices; Anti-rape devices
- A61F5/01—Orthopaedic devices, e.g. splints, casts or braces
- A61F5/02—Orthopaedic corsets
- A61F5/028—Braces for providing support to the lower back, e.g. lumbo sacral supports
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N2/00—Magnetotherapy
- A61N2/06—Magnetotherapy using magnetic fields produced by permanent magnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
Landscapes
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Public Health (AREA)
- Animal Behavior & Ethology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Biomedical Technology (AREA)
- Veterinary Medicine (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- General Health & Medical Sciences (AREA)
- Heart & Thoracic Surgery (AREA)
- Vascular Medicine (AREA)
- Nursing (AREA)
- Orthopedic Medicine & Surgery (AREA)
- Radiology & Medical Imaging (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
2 P型の単結晶シリコン基板
3 N型のエピタキシャル層
5 P型の拡散層
7 P型の拡散層
8 P型の拡散層
10 N型の拡散層
13 P型の拡散層
14 ショットキーバリア用金属層
18 金属層
20 端部
21 シリサイド層
Claims (8)
- 一導電型の半導体層に離隔して形成される逆導電型の第1及び第2のアノード拡散層と、
前記半導体層に形成される一導電型のカソード拡散層と、
前記第2のアノード拡散層と連結し、前記カソード拡散層側へと延在するように、前記半導体層に形成される逆導電型の第3のアノード拡散層と、
前記半導体層上面に形成される絶縁層と、
前記絶縁層に形成されたコンタクトホールを介して前記第1及び第2のアノード拡散層と接続し、且つ前記第1のアノード拡散層と前記第2のアノード拡散層との間の前記半導体層とショットキー接合するアノード電極とを有するショットキーバリアダイオードであり、
前記第2のアノード拡散層は、前記第1のアノード拡散層及び前記ショットキー接合する半導体層を囲むように配置され、
前記第3のアノード拡散層上方の前記絶縁層上面には、前記アノード電極または前記アノード電極と接続する金属層が配置されることを特徴とする半導体装置。 - 前記半導体層の前記第2のアノード拡散層上方には、前記コンタクトホールを開口することで形成される前記アノード電極の端部が配置されることを特徴とする請求項1に記載の半導体装置。
- 前記第2のアノード拡散層は、少なくとも不純物濃度の異なる2つの逆導電型の拡散層から構成されることを特徴とする請求項1に記載の半導体装置。
- 前記第3のアノード拡散層の不純物濃度は、前記第2のアノード拡散層を構成する前記逆導電型の拡散層の不純物濃度より低いことを特徴とする請求項3に記載の半導体装置。
- 前記カソード拡散層には逆導電型の排出用拡散層が重畳して形成され、前記逆導電型の排出用拡散層にはカソード電極が接続していることを特徴とする請求項1に記載の半導体装置。
- 前記アノード電極または前記アノード電極と接続する金属層は、第3のアノード拡散層よりも前記カソード電極側に延在していることを特徴とする請求項1に記載の半導体装置。
- 前記アノード電極上方には、前記アノード電極にアノード電位を印加する配線層用のコンタクトホールが配置されていることを特徴とする請求項1に記載の半導体装置。
- 前記アノード電位が印加された配線層の下方の前記半導体層上には、前記カソード拡散層と同電位となる電界遮断膜が配置され、
前記電界遮断膜は、前記アノード電位が印加された配線層と前記カソード拡散層が交差する領域に配置されていることを特徴とする請求項7に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006064619A JP4944460B2 (ja) | 2005-03-30 | 2006-03-09 | 半導体装置 |
TW095109148A TW200723500A (en) | 2005-03-30 | 2006-03-17 | Semiconductor device |
KR1020060026461A KR100683101B1 (ko) | 2005-03-30 | 2006-03-23 | 반도체 장치 |
US11/395,599 US7737523B2 (en) | 2005-03-30 | 2006-03-30 | Semiconductor device |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005098965 | 2005-03-30 | ||
JP2005098965 | 2005-03-30 | ||
JP2006064619A JP4944460B2 (ja) | 2005-03-30 | 2006-03-09 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006310791A JP2006310791A (ja) | 2006-11-09 |
JP4944460B2 true JP4944460B2 (ja) | 2012-05-30 |
Family
ID=37069319
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006064619A Expired - Fee Related JP4944460B2 (ja) | 2005-03-30 | 2006-03-09 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7737523B2 (ja) |
JP (1) | JP4944460B2 (ja) |
KR (1) | KR100683101B1 (ja) |
TW (1) | TW200723500A (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4944460B2 (ja) | 2005-03-30 | 2012-05-30 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
JP2006310790A (ja) * | 2005-03-30 | 2006-11-09 | Sanyo Electric Co Ltd | 半導体装置 |
JP2008085187A (ja) * | 2006-09-28 | 2008-04-10 | Sanyo Electric Co Ltd | 半導体装置 |
KR100932137B1 (ko) * | 2007-06-08 | 2009-12-16 | 주식회사 동부하이텍 | 수평형 디모스 소자의 구조 및 그 제조방법 |
JP5085241B2 (ja) | 2007-09-06 | 2012-11-28 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2009141062A (ja) * | 2007-12-05 | 2009-06-25 | Panasonic Corp | 半導体装置及びその製造方法 |
US7638857B2 (en) * | 2008-05-07 | 2009-12-29 | United Microelectronics Corp. | Structure of silicon controlled rectifier |
US8324705B2 (en) * | 2008-05-27 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Schottky diodes having low-voltage and high-concentration rings |
JP5124533B2 (ja) * | 2009-06-30 | 2013-01-23 | 株式会社日立製作所 | 半導体装置、それを用いたプラズマディスプレイ駆動用半導体集積回路装置、及びプラズマディスプレイ装置 |
DE102009046606A1 (de) * | 2009-11-11 | 2011-05-12 | Robert Bosch Gmbh | Schutzelement für elektronische Schaltungen |
JP5957171B2 (ja) | 2010-06-30 | 2016-07-27 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP5711646B2 (ja) * | 2010-11-16 | 2015-05-07 | 株式会社豊田中央研究所 | ダイオード |
CN102208456B (zh) * | 2011-05-18 | 2012-10-31 | 哈尔滨工程大学 | 叠置p+-p结势垒控制肖特基二极管 |
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KR20180114685A (ko) * | 2017-04-11 | 2018-10-19 | 삼성전자주식회사 | 쇼트키 다이오드 및 이를 포함하는 집적 회로 |
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WO2002049092A1 (en) * | 2000-12-11 | 2002-06-20 | Koninklijke Philips Electronics N.V. | Method for the manufacture of a semiconductor device with a field-effect transistor |
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JP2002305309A (ja) | 2001-02-01 | 2002-10-18 | Hitachi Ltd | 半導体装置およびその製造方法 |
DE10106359C1 (de) | 2001-02-12 | 2002-09-05 | Hanning Elektro Werke | Laterales Halbleiterbauelement in Dünnfilm-SOI-Technik |
JP4892787B2 (ja) | 2001-04-09 | 2012-03-07 | 株式会社デンソー | ショットキーダイオード及びその製造方法 |
US6657273B2 (en) * | 2001-06-12 | 2003-12-02 | International Rectifirer Corporation | Termination for high voltage schottky diode |
JP3708057B2 (ja) * | 2001-07-17 | 2005-10-19 | 株式会社東芝 | 高耐圧半導体装置 |
JP2004221456A (ja) * | 2003-01-17 | 2004-08-05 | Toshiba Corp | 半導体装置 |
US7105875B2 (en) | 2004-06-03 | 2006-09-12 | Wide Bandgap, Llc | Lateral power diodes |
JP4944460B2 (ja) | 2005-03-30 | 2012-05-30 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置 |
JP2006310790A (ja) | 2005-03-30 | 2006-11-09 | Sanyo Electric Co Ltd | 半導体装置 |
JP2006310555A (ja) | 2005-04-28 | 2006-11-09 | Nec Electronics Corp | 半導体装置およびその製造方法 |
JP2008085187A (ja) | 2006-09-28 | 2008-04-10 | Sanyo Electric Co Ltd | 半導体装置 |
JP2008085186A (ja) | 2006-09-28 | 2008-04-10 | Sanyo Electric Co Ltd | 半導体装置 |
-
2006
- 2006-03-09 JP JP2006064619A patent/JP4944460B2/ja not_active Expired - Fee Related
- 2006-03-17 TW TW095109148A patent/TW200723500A/zh not_active IP Right Cessation
- 2006-03-23 KR KR1020060026461A patent/KR100683101B1/ko not_active IP Right Cessation
- 2006-03-30 US US11/395,599 patent/US7737523B2/en active Active
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TW200723500A (en) | 2007-06-16 |
KR100683101B1 (ko) | 2007-02-15 |
KR20060106696A (ko) | 2006-10-12 |
US7737523B2 (en) | 2010-06-15 |
US20060220166A1 (en) | 2006-10-05 |
JP2006310791A (ja) | 2006-11-09 |
TWI314778B (ja) | 2009-09-11 |
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