FR2740907B1 - Dispositif a semiconducteur utilisant le carbure de silicium - Google Patents

Dispositif a semiconducteur utilisant le carbure de silicium

Info

Publication number
FR2740907B1
FR2740907B1 FR9612392A FR9612392A FR2740907B1 FR 2740907 B1 FR2740907 B1 FR 2740907B1 FR 9612392 A FR9612392 A FR 9612392A FR 9612392 A FR9612392 A FR 9612392A FR 2740907 B1 FR2740907 B1 FR 2740907B1
Authority
FR
France
Prior art keywords
semiconductor device
silicon carbide
carbide
silicon
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9612392A
Other languages
English (en)
Other versions
FR2740907A1 (fr
Inventor
Janardhanan S Ajit
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of FR2740907A1 publication Critical patent/FR2740907A1/fr
Application granted granted Critical
Publication of FR2740907B1 publication Critical patent/FR2740907B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR9612392A 1995-10-10 1996-10-10 Dispositif a semiconducteur utilisant le carbure de silicium Expired - Fee Related FR2740907B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US498395P 1995-10-10 1995-10-10

Publications (2)

Publication Number Publication Date
FR2740907A1 FR2740907A1 (fr) 1997-05-09
FR2740907B1 true FR2740907B1 (fr) 1999-05-14

Family

ID=21713529

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9612392A Expired - Fee Related FR2740907B1 (fr) 1995-10-10 1996-10-10 Dispositif a semiconducteur utilisant le carbure de silicium

Country Status (9)

Country Link
US (1) US5877515A (fr)
JP (1) JPH09172159A (fr)
KR (1) KR970024296A (fr)
DE (1) DE19641839A1 (fr)
FR (1) FR2740907B1 (fr)
GB (1) GB2306250A (fr)
IT (1) IT1285498B1 (fr)
SG (1) SG64402A1 (fr)
TW (1) TW317647B (fr)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08213607A (ja) * 1995-02-08 1996-08-20 Ngk Insulators Ltd 半導体装置およびその製造方法
JP3327135B2 (ja) * 1996-09-09 2002-09-24 日産自動車株式会社 電界効果トランジスタ
JP3461274B2 (ja) * 1996-10-16 2003-10-27 株式会社東芝 半導体装置
JP3206727B2 (ja) * 1997-02-20 2001-09-10 富士電機株式会社 炭化けい素縦型ｍｏｓｆｅｔおよびその製造方法
KR100553650B1 (ko) * 1997-06-23 2006-02-24 제임스 알버트 주니어 쿠퍼 폭이 넓은 밴드갭 반도체 내의 전력 소자
KR20000068738A (ko) * 1997-08-13 2000-11-25 모리시타 요이찌 반도체기판 및 반도체소자
DE19741928C1 (de) * 1997-09-10 1998-09-24 Siemens Ag Halbleiterbauelement
US6624030B2 (en) 2000-12-19 2003-09-23 Advanced Power Devices, Inc. Method of fabricating power rectifier device having a laterally graded P-N junction for a channel region
US6331455B1 (en) 1999-04-01 2001-12-18 Advanced Power Devices, Inc. Power rectifier device and method of fabricating power rectifier devices
US6420225B1 (en) 1999-04-01 2002-07-16 Apd Semiconductor, Inc. Method of fabricating power rectifier device
US6448160B1 (en) 1999-04-01 2002-09-10 Apd Semiconductor, Inc. Method of fabricating power rectifier device to vary operating parameters and resulting device
US6498367B1 (en) 1999-04-01 2002-12-24 Apd Semiconductor, Inc. Discrete integrated circuit rectifier device
DE60033829T2 (de) * 1999-09-07 2007-10-11 Sixon Inc. SiC-HALBLEITERSCHEIBE, SiC-HALBLEITERBAUELEMENT SOWIE HERSTELLUNGSVERFAHREN FÜR EINE SiC-HALBLEITERSCHEIBE
US6303508B1 (en) 1999-12-16 2001-10-16 Philips Electronics North America Corporation Superior silicon carbide integrated circuits and method of fabricating
US6407014B1 (en) 1999-12-16 2002-06-18 Philips Electronics North America Corporation Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices
US6537860B2 (en) 2000-12-18 2003-03-25 Apd Semiconductor, Inc. Method of fabricating power VLSI diode devices
US6859074B2 (en) * 2001-01-09 2005-02-22 Broadcom Corporation I/O circuit using low voltage transistors which can tolerate high voltages even when power supplies are powered off
EP1267415A3 (fr) * 2001-06-11 2009-04-15 Kabushiki Kaisha Toshiba Dispositif semi-conducteur de puissance ayant une région de type RESURF
JP4288907B2 (ja) * 2001-08-29 2009-07-01 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP2003100657A (ja) * 2001-09-20 2003-04-04 Nissan Motor Co Ltd 半導体装置の製造方法
US7138836B2 (en) * 2001-12-03 2006-11-21 Broadcom Corporation Hot carrier injection suppression circuit
JP2003174187A (ja) * 2001-12-07 2003-06-20 Sumitomo Chem Co Ltd 薄膜半導体エピタキシャル基板及びその製造方法
JP3559971B2 (ja) * 2001-12-11 2004-09-02 日産自動車株式会社 炭化珪素半導体装置およびその製造方法
US6515330B1 (en) * 2002-01-02 2003-02-04 Apd Semiconductor, Inc. Power device having vertical current path with enhanced pinch-off for current limiting
US7183575B2 (en) 2002-02-19 2007-02-27 Nissan Motor Co., Ltd. High reverse voltage silicon carbide diode and method of manufacturing the same high reverse voltage silicon carbide diode
US7282739B2 (en) * 2002-04-26 2007-10-16 Nissan Motor Co., Ltd. Silicon carbide semiconductor device
US7074643B2 (en) * 2003-04-24 2006-07-11 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
JP2006245243A (ja) * 2005-03-02 2006-09-14 Fuji Electric Device Technology Co Ltd 半導体装置およびその製造方法
US7588961B2 (en) * 2005-03-30 2009-09-15 Nissan Motor Co., Ltd. Semiconductor device and manufacturing method thereof
US8901699B2 (en) 2005-05-11 2014-12-02 Cree, Inc. Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection
JP4903439B2 (ja) * 2005-05-31 2012-03-28 株式会社東芝 電界効果トランジスタ
US7589004B2 (en) * 2005-06-21 2009-09-15 Los Alamos National Security, Llc Method for implantation of high dopant concentrations in wide band gap materials
DE102005047054B4 (de) * 2005-09-30 2008-04-03 Infineon Technologies Austria Ag Leistungs-MOS-Transistor mit einer SiC-Driftzone und Verfahren zur Herstellung eines Leistungs-MOS-Transistors
JP2007299845A (ja) * 2006-04-28 2007-11-15 Nissan Motor Co Ltd 半導体装置の製造方法および半導体装置
DE102007004320A1 (de) * 2007-01-29 2008-07-31 Infineon Technologies Ag Halbleiterbauelement mit vertikalen Strukturen von hohem Aspektverhältnis und Verfahren zur Herstellung einer kapazitiven Struktur in einem Halbleiterkörper
EP2232559B1 (fr) * 2007-09-26 2019-05-15 STMicroelectronics N.V. Redresseur à effet de champ ajustable
US8148748B2 (en) * 2007-09-26 2012-04-03 Stmicroelectronics N.V. Adjustable field effect rectifier
US8492771B2 (en) 2007-09-27 2013-07-23 Infineon Technologies Austria Ag Heterojunction semiconductor device and method
US20090159896A1 (en) * 2007-12-20 2009-06-25 General Electric Company Silicon carbide mosfet devices and methods of making
WO2010080855A2 (fr) * 2009-01-06 2010-07-15 Lakota Technologies Inc. Structures de diode à effet de champ à auto-amorçage et procédés correspondants
SG183740A1 (en) 2009-02-20 2012-09-27 Semiconductor Energy Lab Semiconductor device and manufacturing method of the same
WO2010127370A2 (fr) * 2009-05-01 2010-11-04 Lakota Technologies, Inc. Dispositif de limitation de courant série
JP5699628B2 (ja) * 2010-07-26 2015-04-15 住友電気工業株式会社 半導体装置
IT1401754B1 (it) * 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato e relativo metodo di fabbricazione.
IT1401755B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato a conduzione verticale e relativo metodo di fabbricazione.
IT1401756B1 (it) 2010-08-30 2013-08-02 St Microelectronics Srl Dispositivo elettronico integrato con struttura di terminazione di bordo e relativo metodo di fabbricazione.
JP5730521B2 (ja) * 2010-09-08 2015-06-10 株式会社日立ハイテクノロジーズ 熱処理装置
US8389348B2 (en) * 2010-09-14 2013-03-05 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics
GB2484506A (en) * 2010-10-13 2012-04-18 Univ Warwick Heterogrowth
DE102011053641A1 (de) * 2011-09-15 2013-03-21 Infineon Technologies Ag SiC-MOSFET mit hoher Kanalbeweglichkeit
CN104347708A (zh) * 2013-08-07 2015-02-11 中芯国际集成电路制造(北京)有限公司 多栅vdmos晶体管及其形成方法
JP6228850B2 (ja) * 2014-01-10 2017-11-08 ルネサスエレクトロニクス株式会社 半導体装置
JP6237408B2 (ja) * 2014-03-28 2017-11-29 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
CN105336775B (zh) * 2014-07-01 2018-03-09 无锡华润华晶微电子有限公司 一种vdmos器件的元胞结构及其制作方法
US10147813B2 (en) 2016-03-04 2018-12-04 United Silicon Carbide, Inc. Tunneling field effect transistor
CN105810722B (zh) * 2016-03-16 2019-04-30 中国科学院半导体研究所 一种碳化硅mosfet器件及其制备方法
CN107086243A (zh) * 2017-03-16 2017-08-22 西安电子科技大学 具有宽带隙材料与硅材料复合的u‑mosfet
US10957791B2 (en) * 2019-03-08 2021-03-23 Infineon Technologies Americas Corp. Power device with low gate charge and low figure of merit
CN110429137B (zh) * 2019-08-15 2020-08-21 西安电子科技大学 具有部分氮化镓/硅半导体材料异质结的vdmos及其制作方法
US10777689B1 (en) 2019-10-18 2020-09-15 Hong Kong Applied Science and Technology Research Institute Company, Limited Silicon-carbide shielded-MOSFET embedded with a trench Schottky diode and heterojunction gate
CN116741639A (zh) * 2023-06-20 2023-09-12 中国科学院上海微系统与信息技术研究所 半导体器件的制备方法及半导体器件
CN116895699A (zh) * 2023-09-08 2023-10-17 成都蓉矽半导体有限公司 一种具有异质结的共源共栅沟槽mosfet及制备方法
CN117423729A (zh) * 2023-12-18 2024-01-19 深圳天狼芯半导体有限公司 一种具有异质结的沟槽栅vdmos及制备方法
CN117438446A (zh) * 2023-12-18 2024-01-23 深圳天狼芯半导体有限公司 一种具有异质结的平面vdmos及制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2159592A5 (en) * 1971-11-04 1973-06-22 Anvar Beta-silicon carbide/silicon semiconductor device - made by epitaxial growth
JPS60136223A (ja) * 1983-12-23 1985-07-19 Sharp Corp 炭化珪素半導体素子の製造方法
JPS63254762A (ja) * 1987-04-13 1988-10-21 Nissan Motor Co Ltd Ｃｍｏｓ半導体装置
US5216264A (en) * 1989-06-07 1993-06-01 Sharp Kabushiki Kaisha Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact
JPH04335538A (ja) * 1991-05-10 1992-11-24 Mitsubishi Electric Corp 半導体装置およびその製造方法
JPH0521762A (ja) * 1991-07-10 1993-01-29 Mitsubishi Electric Corp 電界効果型トランジスタを備えた半導体装置およびその製造方法
US5234848A (en) * 1991-11-05 1993-08-10 Texas Instruments Incorporated Method for fabricating lateral resonant tunneling transistor with heterojunction barriers
US5272096A (en) * 1992-09-29 1993-12-21 Motorola, Inc. Method for making a bipolar transistor having a silicon carbide layer
US5506421A (en) * 1992-11-24 1996-04-09 Cree Research, Inc. Power MOSFET in silicon carbide
US5539217A (en) * 1993-08-09 1996-07-23 Cree Research, Inc. Silicon carbide thyristor
US5323040A (en) * 1993-09-27 1994-06-21 North Carolina State University At Raleigh Silicon carbide field effect device
US5378912A (en) * 1993-11-10 1995-01-03 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region
US5510275A (en) * 1993-11-29 1996-04-23 Texas Instruments Incorporated Method of making a semiconductor device with a composite drift region composed of a substrate and a second semiconductor material
US5396085A (en) * 1993-12-28 1995-03-07 North Carolina State University Silicon carbide switching device with rectifying-gate

Also Published As

Publication number Publication date
SG64402A1 (en) 1999-04-27
IT1285498B1 (it) 1998-06-08
ITMI962098A1 (it) 1998-04-10
KR970024296A (ko) 1997-05-30
GB9621170D0 (en) 1996-11-27
GB2306250A (en) 1997-04-30
FR2740907A1 (fr) 1997-05-09
DE19641839A1 (de) 1997-05-15
JPH09172159A (ja) 1997-06-30
US5877515A (en) 1999-03-02
TW317647B (fr) 1997-10-11

Similar Documents

Publication Publication Date Title
FR2740907B1 (fr) Dispositif a semiconducteur utilisant le carbure de silicium
FR2744837B1 (fr) Dispositif a semi-conducteur en carbure de silicium et son procede de fabrication
DE29504629U1 (de) Siliciumcarbid-Schottky-Diode
DE69610457T2 (de) Halbleitervorrichtung
KR970004020A (ko) 반도체장치
KR970005998A (ko) 반도체 장치
FR2733305B3 (fr) Dispositif electrosolaire
FR2738060B1 (fr) Dispositif electro-explosif realise sur substrat
DE59106545D1 (de) Lochplatte aus monokristallinem Silizium.
DE69322565D1 (de) Diamant-Halbleiteranordnung
DE59607521D1 (de) Halbleiter-Bauelement-Konfiguration
FR2743245B1 (fr) Dispositif de demultiplexage
FR2803103B1 (fr) Diode schottky sur substrat de carbure de silicium
FR2747401B1 (fr) Dispositif et procede pour la formation de carbure de silicium (sic) monocristallin sur un germe
FR2774234B1 (fr) Dispositif a semiconducteur
DE68909481D1 (de) Siliciumcarbid-diffusionsrohr fuer halbleiter.
FR2716749B1 (fr) Dispositif à semiconducteur possédant une pellicule de silicium fortement dopée.
DE19681689T1 (de) Gesichertes Halbleiterbauelement
DE69635180D1 (de) Lichtemittierende Halbleitervorrichtung
DE69622292D1 (de) Halbleiteranordnung
FR2731766B1 (fr) Dispositif de robinetteries
FR2733579B1 (fr) Dispositif de combustion de kerosene
IT1276998B1 (it) Dispositivo integrato monoliticamente
FR2746215B1 (fr) Dispositif semiconducteur d'emission-reception a faible diaphotie
FR2766006B1 (fr) Dispositif a semiconducteur

Legal Events

Date Code Title Description
ST Notification of lapse