DE69416427D1 - Puffer-struktur zwischen siliziumkarbid und galliumnitrid und sich daraus ergebende halbleiteranordnungen - Google Patents

Puffer-struktur zwischen siliziumkarbid und galliumnitrid und sich daraus ergebende halbleiteranordnungen

Info

Publication number
DE69416427D1
DE69416427D1 DE69416427T DE69416427T DE69416427D1 DE 69416427 D1 DE69416427 D1 DE 69416427D1 DE 69416427 T DE69416427 T DE 69416427T DE 69416427 T DE69416427 T DE 69416427T DE 69416427 D1 DE69416427 D1 DE 69416427D1
Authority
DE
Germany
Prior art keywords
layer
gallium nitride
silicon carbide
aluminum nitride
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69416427T
Other languages
English (en)
Other versions
DE69416427T2 (de
Inventor
John Edmond
Vladimir Dmitriev
Kenneth Irvine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Research Inc
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Research Inc, Cree Inc filed Critical Cree Research Inc
Application granted granted Critical
Publication of DE69416427D1 publication Critical patent/DE69416427D1/de
Publication of DE69416427T2 publication Critical patent/DE69416427T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Ceramic Products (AREA)
DE69416427T 1993-12-13 1994-11-01 Puffer-struktur zwischen siliziumkarbid und galliumnitrid und sich daraus ergebende halbleiteranordnungen Expired - Lifetime DE69416427T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/166,229 US5393993A (en) 1993-12-13 1993-12-13 Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
PCT/US1994/013940 WO1995017019A1 (en) 1993-12-13 1994-11-01 Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices

Publications (2)

Publication Number Publication Date
DE69416427D1 true DE69416427D1 (de) 1999-03-18
DE69416427T2 DE69416427T2 (de) 1999-10-21

Family

ID=22602363

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69416427T Expired - Lifetime DE69416427T2 (de) 1993-12-13 1994-11-01 Puffer-struktur zwischen siliziumkarbid und galliumnitrid und sich daraus ergebende halbleiteranordnungen

Country Status (11)

Country Link
US (1) US5393993A (de)
EP (1) EP0734593B1 (de)
JP (1) JP2741705B2 (de)
KR (1) KR100253026B1 (de)
CN (1) CN1059755C (de)
AT (1) ATE176553T1 (de)
AU (1) AU1300295A (de)
CA (1) CA2177465C (de)
DE (1) DE69416427T2 (de)
TW (1) TW273051B (de)
WO (1) WO1995017019A1 (de)

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