WO2000024097A8 - Improved far-field nitride based semiconductor device - Google Patents

Improved far-field nitride based semiconductor device

Info

Publication number
WO2000024097A8
WO2000024097A8 PCT/US1999/024146 US9924146W WO0024097A8 WO 2000024097 A8 WO2000024097 A8 WO 2000024097A8 US 9924146 W US9924146 W US 9924146W WO 0024097 A8 WO0024097 A8 WO 0024097A8
Authority
WO
WIPO (PCT)
Prior art keywords
layer
semiconductor device
nitride semiconductor
based semiconductor
nitride based
Prior art date
Application number
PCT/US1999/024146
Other languages
French (fr)
Other versions
WO2000024097A1 (en
Inventor
Tetsuya Takeuchi
Yawara Kaneko
Norihide Yamada
Hiroshi Amano
Isamu Akasaki
Original Assignee
Hewlett Packard Co
Tetsuya Takeuchi
Yawara Kaneko
Norihide Yamada
Hiroshi Amano
Isamu Akasaki
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co, Tetsuya Takeuchi, Yawara Kaneko, Norihide Yamada, Hiroshi Amano, Isamu Akasaki filed Critical Hewlett Packard Co
Priority to EP99954948A priority Critical patent/EP1121735A1/en
Publication of WO2000024097A1 publication Critical patent/WO2000024097A1/en
Priority to US09/833,243 priority patent/US6690700B2/en
Publication of WO2000024097A8 publication Critical patent/WO2000024097A8/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Abstract

A nitride semiconductor device that comprises a first layer, a second layer and a buffer layer sandwiched between the first layer and the second layer. The second layer is a layer of a single-crystal nitride semiconductor material including AIN and has a thickness greater than the thickness at which cracks would form if the second layer was grown directly on the first layer. The buffer layer is a layer of a low-temperature-deposited nitride semiconductor material that includes AIN. Incorporating the nitride semiconductor device into a semiconductor laser diode enables the laser diode to generate coherent light having a far-field pattern that exhibits a single peak.
PCT/US1999/024146 1998-10-16 1999-10-14 Improved far-field nitride based semiconductor device WO2000024097A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP99954948A EP1121735A1 (en) 1998-10-16 1999-10-14 Improved far-field nitride based semiconductor laser
US09/833,243 US6690700B2 (en) 1998-10-16 2001-04-10 Nitride semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31399398A JP2000124552A (en) 1998-10-16 1998-10-16 Nitride semiconductor laser element
JP10/313993 1998-10-16

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US09/833,243 Continuation US6690700B2 (en) 1998-10-16 2001-04-10 Nitride semiconductor device

Publications (2)

Publication Number Publication Date
WO2000024097A1 WO2000024097A1 (en) 2000-04-27
WO2000024097A8 true WO2000024097A8 (en) 2001-05-17

Family

ID=18047943

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/024146 WO2000024097A1 (en) 1998-10-16 1999-10-14 Improved far-field nitride based semiconductor device

Country Status (3)

Country Link
EP (1) EP1121735A1 (en)
JP (1) JP2000124552A (en)
WO (1) WO2000024097A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10329079B4 (en) * 2003-06-27 2014-10-23 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component
JP2006196867A (en) 2004-12-17 2006-07-27 Sharp Corp Semiconductor laser device and optical information recording apparatus provided therewith
JP2008294277A (en) * 2007-05-25 2008-12-04 Sharp Corp Method of manufacturing nitride semiconductor laser element
US11095096B2 (en) 2014-04-16 2021-08-17 Yale University Method for a GaN vertical microcavity surface emitting laser (VCSEL)
US11043792B2 (en) 2014-09-30 2021-06-22 Yale University Method for GaN vertical microcavity surface emitting laser (VCSEL)
US11018231B2 (en) 2014-12-01 2021-05-25 Yale University Method to make buried, highly conductive p-type III-nitride layers
US10554017B2 (en) * 2015-05-19 2020-02-04 Yale University Method and device concerning III-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer
CN105895760B (en) * 2016-04-29 2018-12-21 佛山市南海区联合广东新光源产业创新中心 A kind of LED illumination structure based on silicon carbide substrates

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0678945B1 (en) * 1994-04-20 1998-07-08 Toyoda Gosei Co., Ltd. Gallium nitride group compound semiconductor laser diode and method of manufacturing the same
JPH08222797A (en) * 1995-01-17 1996-08-30 Hewlett Packard Co <Hp> Semiconductor device and manufacture thereof
US5798537A (en) * 1995-08-31 1998-08-25 Kabushiki Kaisha Toshiba Blue light-emitting device
KR100267839B1 (en) * 1995-11-06 2000-10-16 오가와 에이지 Nitride semiconductor device

Also Published As

Publication number Publication date
EP1121735A1 (en) 2001-08-08
WO2000024097A1 (en) 2000-04-27
JP2000124552A (en) 2000-04-28

Similar Documents

Publication Publication Date Title
TW373362B (en) Semiconductor substrate and semiconductor device
TW273051B (en)
TW346686B (en) Epitaxial wafer of light emitting element, method of forming such a wafer, and light emitting element using such a wafer
EP1326290A3 (en) Method of fabricating semiconductor structures
EP0792955A3 (en) Sapphire single crystal, semiconductor laser diode using the same for substrate, and method for manufacturing the same
HK1015549A1 (en) Double heterojunction light emitting diode with gallium nitride active layer.
EP0898345A3 (en) Compound semiconductor light emitting device and method of fabricating the same
EP1744419A3 (en) Compound semiconductor laser
WO1996030945A3 (en) Integrated heterostructures of group iii-v nitride semiconductor materials and methods for fabricating the same
EP0810674A3 (en) Light emitting device, wafer for light emitting device, and method of preparing the same
TWI263387B (en) Light emitting device structure provided with nitride bulk mono-crystal layers
EP0772249A3 (en) Nitride semiconductor device
EP1338683A3 (en) Process for making an epitaxial layer of gallium nitride
AU3629495A (en) Vertical geometry light emitting diode with group iii nitride active layer and extended lifetime
MY143405A (en) N-type nitride semiconductor laminate and semiconductor device using same
EP1139162A3 (en) Optical waveguide elements, optical wavelength conversion elements, and process for producing optical waveguide elements
EP0817282A3 (en) Semiconductor device
DE69921189D1 (en) CONNECTION SEMICONDUCTOR STRUCTURE FOR OPTOELECTRONIC COMPONENTS
AU2001282966A1 (en) Improved buffer for growth of gan on sapphire
EP1306946A4 (en) Iii group nitride compound semiconductor light emitting element
WO2000024097A8 (en) Improved far-field nitride based semiconductor device
EP1324444A3 (en) Dual III-V nitride laser structure with reduced thermal cross-talk
EP0814548A3 (en) Semiconductor laser
TW338198B (en) Gallium nitride compound semiconductor light emitting element and method for fabrication of the same
EP1235317A3 (en) Semiconductor laser module and semiconductor laser device having light feedback function

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): CN KR

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: 1999954948

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 09833243

Country of ref document: US

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)

Free format text: (EXCEPT US)

AK Designated states

Kind code of ref document: C1

Designated state(s): CN KR US

AL Designated countries for regional patents

Kind code of ref document: C1

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE

CFP Corrected version of a pamphlet front page
CR1 Correction of entry in section i

Free format text: PAT. BUL. 17/2000 UNDER (81) ADD "US"

WWP Wipo information: published in national office

Ref document number: 1999954948

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 1999954948

Country of ref document: EP