SE9404452D0 - Semiconductor device having an insulated gate - Google Patents

Semiconductor device having an insulated gate

Info

Publication number
SE9404452D0
SE9404452D0 SE9404452A SE9404452A SE9404452D0 SE 9404452 D0 SE9404452 D0 SE 9404452D0 SE 9404452 A SE9404452 A SE 9404452A SE 9404452 A SE9404452 A SE 9404452A SE 9404452 D0 SE9404452 D0 SE 9404452D0
Authority
SE
Sweden
Prior art keywords
sic
layer
semiconductor device
insulating
insulated gate
Prior art date
Application number
SE9404452A
Other languages
English (en)
Inventor
Christopher I Harris
Erik Janzen
Andrei Konstantinov
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE9404452A priority Critical patent/SE9404452D0/sv
Publication of SE9404452D0 publication Critical patent/SE9404452D0/sv
Priority to PCT/SE1995/001551 priority patent/WO1996019834A2/en
Priority to DE69511726T priority patent/DE69511726T2/de
Priority to EP95942349A priority patent/EP0799499B1/en
Priority to JP8519734A priority patent/JPH10510952A/ja
Priority to US08/829,481 priority patent/US5900648A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/432—Heterojunction gate for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
SE9404452A 1994-12-22 1994-12-22 Semiconductor device having an insulated gate SE9404452D0 (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE9404452A SE9404452D0 (sv) 1994-12-22 1994-12-22 Semiconductor device having an insulated gate
PCT/SE1995/001551 WO1996019834A2 (en) 1994-12-22 1995-12-20 Semiconductor device having an insulated gate
DE69511726T DE69511726T2 (de) 1994-12-22 1995-12-20 Halbleiteranordnung mit isoliertem gate
EP95942349A EP0799499B1 (en) 1994-12-22 1995-12-20 Semiconductor device having an insulated gate
JP8519734A JPH10510952A (ja) 1994-12-22 1995-12-20 絶縁されたゲートを有する半導体デバイス
US08/829,481 US5900648A (en) 1994-12-22 1997-03-28 Semiconductor device having an insulated gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9404452A SE9404452D0 (sv) 1994-12-22 1994-12-22 Semiconductor device having an insulated gate

Publications (1)

Publication Number Publication Date
SE9404452D0 true SE9404452D0 (sv) 1994-12-22

Family

ID=20396419

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9404452A SE9404452D0 (sv) 1994-12-22 1994-12-22 Semiconductor device having an insulated gate

Country Status (6)

Country Link
US (1) US5900648A (sv)
EP (1) EP0799499B1 (sv)
JP (1) JPH10510952A (sv)
DE (1) DE69511726T2 (sv)
SE (1) SE9404452D0 (sv)
WO (1) WO1996019834A2 (sv)

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DE69521409T2 (de) * 1995-03-01 2002-05-16 Sumitomo Electric Industries Boraluminiumnitrid-Beschichtung und Verfahren zu ihrer Herstellung
US5915164A (en) * 1995-12-28 1999-06-22 U.S. Philips Corporation Methods of making high voltage GaN-A1N based semiconductor devices
SE9602745D0 (sv) * 1996-07-11 1996-07-11 Abb Research Ltd A method for producing a channel region layer in a SiC-layer for a voltage controlled semiconductor device
US6180958B1 (en) * 1997-02-07 2001-01-30 James Albert Cooper, Jr. Structure for increasing the maximum voltage of silicon carbide power transistors
CN1267397A (zh) * 1997-08-20 2000-09-20 西门子公司 具有预定的α碳化硅区的半导体结构及此半导体结构的应用
GB2343294A (en) * 1998-10-31 2000-05-03 Sharp Kk Lattice-matched semiconductor devices
JP3440861B2 (ja) * 1999-01-19 2003-08-25 松下電器産業株式会社 電界効果トランジスタの製造方法
US6686616B1 (en) 2000-05-10 2004-02-03 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors
JP4869489B2 (ja) * 2001-03-28 2012-02-08 三菱電機株式会社 半導体デバイス
DE10120877A1 (de) * 2001-04-27 2002-10-31 Philips Corp Intellectual Pty Anordnung mit einem Halbleiterbauelement
US6906350B2 (en) 2001-10-24 2005-06-14 Cree, Inc. Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure
US6956239B2 (en) * 2002-11-26 2005-10-18 Cree, Inc. Transistors having buried p-type layers beneath the source region
TWI313060B (en) * 2003-07-28 2009-08-01 Japan Science & Tech Agency Feild effect transisitor and fabricating method thereof
JP4066946B2 (ja) * 2003-12-18 2008-03-26 日産自動車株式会社 半導体装置
JP4635470B2 (ja) * 2004-04-19 2011-02-23 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US7238224B2 (en) * 2004-10-29 2007-07-03 Hewlett-Packard Development Company, L.P. Fluid-gas separator
US20060091606A1 (en) * 2004-10-28 2006-05-04 Gary Paugh Magnetic building game
US7265399B2 (en) * 2004-10-29 2007-09-04 Cree, Inc. Asymetric layout structures for transistors and methods of fabricating the same
US7348612B2 (en) * 2004-10-29 2008-03-25 Cree, Inc. Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same
US7326962B2 (en) * 2004-12-15 2008-02-05 Cree, Inc. Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same
US8203185B2 (en) * 2005-06-21 2012-06-19 Cree, Inc. Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods
US7402844B2 (en) * 2005-11-29 2008-07-22 Cree, Inc. Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods
US7646043B2 (en) * 2006-09-28 2010-01-12 Cree, Inc. Transistors having buried p-type layers coupled to the gate
US8067776B2 (en) * 2007-06-08 2011-11-29 Nissan Motor Co., Ltd. Method of manufacturing semiconductor device and semiconductor device manufactured thereof
US8350270B2 (en) * 2008-03-07 2013-01-08 Mitsubishi Electric Corporation Silicon carbide semiconductor device and method for manufacturing the same
JP4796667B2 (ja) * 2009-11-17 2011-10-19 パナソニック株式会社 半導体素子及びその製造方法
JP6989537B2 (ja) 2019-01-04 2022-01-05 株式会社東芝 半導体装置、インバータ回路、駆動装置、車両、及び、昇降機
IT201900007217A1 (it) * 2019-05-24 2020-11-24 Consiglio Nazionale Ricerche Dispositivo elettronico basato su sic di tipo migliorato e metodo di fabbricazione dello stesso

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US3692700A (en) * 1970-08-31 1972-09-19 Exxon Research Engineering Co Process and compositions for cracking hydrocarbon feeds
US4849797A (en) * 1987-01-23 1989-07-18 Hosiden Electronics Co., Ltd. Thin film transistor
US5258631A (en) * 1987-01-30 1993-11-02 Hitachi, Ltd. Semiconductor device having a two-dimensional electron gas as an active layer
US5135885A (en) * 1989-03-27 1992-08-04 Sharp Corporation Method of manufacturing silicon carbide fets
JPH0766971B2 (ja) * 1989-06-07 1995-07-19 シャープ株式会社 炭化珪素半導体装置
JP2813023B2 (ja) * 1990-03-13 1998-10-22 株式会社神戸製鋼所 Ｍｉｓ型ダイヤモンド電界効果トランジスタ
US5326992A (en) * 1992-07-29 1994-07-05 The United States Of America As Represented By The Secretary Of The Navy Silicon carbide and SiCAlN heterojunction bipolar transistor structures
DE4323814A1 (de) * 1992-09-25 1994-03-31 Siemens Ag MIS-Feldeffekttransistor
FR2707425A1 (fr) * 1993-07-09 1995-01-13 Thomson Csf Structure en matériau semiconducteur, application à la réalisation d'un transistor et procédé de réalisation.
US5539217A (en) * 1993-08-09 1996-07-23 Cree Research, Inc. Silicon carbide thyristor
KR0153878B1 (ko) * 1994-06-07 1998-10-15 쿠미하시 요시유키 탄화규소반도체장치와 그 제조방법
JPH08204179A (ja) * 1995-01-26 1996-08-09 Fuji Electric Co Ltd 炭化ケイ素トレンチｍｏｓｆｅｔ

Also Published As

Publication number Publication date
US5900648A (en) 1999-05-04
DE69511726D1 (de) 1999-09-30
DE69511726T2 (de) 1999-12-16
WO1996019834A3 (en) 1996-08-22
EP0799499A2 (en) 1997-10-08
WO1996019834A2 (en) 1996-06-27
EP0799499B1 (en) 1999-08-25
JPH10510952A (ja) 1998-10-20

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