SE9704150D0 - Semiconductor device of SiC with insulating layer a refractory metal nitride layer - Google Patents

Semiconductor device of SiC with insulating layer a refractory metal nitride layer

Info

Publication number
SE9704150D0
SE9704150D0 SE9704150A SE9704150A SE9704150D0 SE 9704150 D0 SE9704150 D0 SE 9704150D0 SE 9704150 A SE9704150 A SE 9704150A SE 9704150 A SE9704150 A SE 9704150A SE 9704150 D0 SE9704150 D0 SE 9704150D0
Authority
SE
Sweden
Prior art keywords
layer
sic
metal nitride
semiconductor device
refractory metal
Prior art date
Application number
SE9704150A
Other languages
English (en)
Inventor
Christopher Harris
Erik Danielsson
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE9704150A priority Critical patent/SE9704150D0/sv
Publication of SE9704150D0 publication Critical patent/SE9704150D0/sv
Priority to US08/972,253 priority patent/US6025608A/en
Priority to PCT/SE1998/002049 priority patent/WO1999026292A2/en
Priority to EP98956065A priority patent/EP1029357A2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
SE9704150A 1997-11-13 1997-11-13 Semiconductor device of SiC with insulating layer a refractory metal nitride layer SE9704150D0 (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE9704150A SE9704150D0 (sv) 1997-11-13 1997-11-13 Semiconductor device of SiC with insulating layer a refractory metal nitride layer
US08/972,253 US6025608A (en) 1997-11-13 1997-11-18 Semiconductor device of SiC with insulating layer and a refractory metal nitride layer
PCT/SE1998/002049 WO1999026292A2 (en) 1997-11-13 1998-11-13 Semiconductor device of sic with insulating layer and a refractory metal nitride layer
EP98956065A EP1029357A2 (en) 1997-11-13 1998-11-13 Semiconductor device of sic with insulating layer and a refractory metal nitride layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9704150A SE9704150D0 (sv) 1997-11-13 1997-11-13 Semiconductor device of SiC with insulating layer a refractory metal nitride layer
US08/972,253 US6025608A (en) 1997-11-13 1997-11-18 Semiconductor device of SiC with insulating layer and a refractory metal nitride layer

Publications (1)

Publication Number Publication Date
SE9704150D0 true SE9704150D0 (sv) 1997-11-13

Family

ID=26663126

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9704150A SE9704150D0 (sv) 1997-11-13 1997-11-13 Semiconductor device of SiC with insulating layer a refractory metal nitride layer

Country Status (3)

Country Link
US (1) US6025608A (sv)
SE (1) SE9704150D0 (sv)
WO (1) WO1999026292A2 (sv)

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US6246076B1 (en) * 1998-08-28 2001-06-12 Cree, Inc. Layered dielectric on silicon carbide semiconductor structures
SE9903956D0 (sv) * 1999-11-02 1999-11-02 Abb Research Ltd An electric high voltage apparatus, a use thereof and a method for simplifying electric high voltage apparatuses
US6610366B2 (en) 2000-10-03 2003-08-26 Cree, Inc. Method of N2O annealing an oxide layer on a silicon carbide layer
US6956238B2 (en) 2000-10-03 2005-10-18 Cree, Inc. Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
US6767843B2 (en) 2000-10-03 2004-07-27 Cree, Inc. Method of N2O growth of an oxide layer on a silicon carbide layer
US7067176B2 (en) 2000-10-03 2006-06-27 Cree, Inc. Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment
US6528373B2 (en) * 2001-02-12 2003-03-04 Cree, Inc. Layered dielectric on silicon carbide semiconductor structures
JP4647211B2 (ja) * 2001-11-30 2011-03-09 パナソニック株式会社 半導体装置及びその製造方法
US7022378B2 (en) * 2002-08-30 2006-04-04 Cree, Inc. Nitrogen passivation of interface states in SiO2/SiC structures
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
US6979863B2 (en) * 2003-04-24 2005-12-27 Cree, Inc. Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
US7074643B2 (en) * 2003-04-24 2006-07-11 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
US7118970B2 (en) * 2004-06-22 2006-10-10 Cree, Inc. Methods of fabricating silicon carbide devices with hybrid well regions
FR2876497B1 (fr) * 2004-10-13 2007-03-23 Commissariat Energie Atomique Revetement a base de mgo pour l'isolation electrique de substrats semi-conducteurs et procede de fabrication
US7414268B2 (en) 2005-05-18 2008-08-19 Cree, Inc. High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
US7391057B2 (en) * 2005-05-18 2008-06-24 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US20060261346A1 (en) * 2005-05-18 2006-11-23 Sei-Hyung Ryu High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
US7615801B2 (en) * 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7528040B2 (en) 2005-05-24 2009-05-05 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
US7727904B2 (en) 2005-09-16 2010-06-01 Cree, Inc. Methods of forming SiC MOSFETs with high inversion layer mobility
US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
US7728402B2 (en) * 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8710510B2 (en) * 2006-08-17 2014-04-29 Cree, Inc. High power insulated gate bipolar transistors
US8835987B2 (en) * 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8288220B2 (en) * 2009-03-27 2012-10-16 Cree, Inc. Methods of forming semiconductor devices including epitaxial layers and related structures
US8294507B2 (en) 2009-05-08 2012-10-23 Cree, Inc. Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits
US8193848B2 (en) 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8629509B2 (en) * 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8541787B2 (en) * 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
US8354690B2 (en) 2009-08-31 2013-01-15 Cree, Inc. Solid-state pinch off thyristor circuits
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US9142662B2 (en) 2011-05-06 2015-09-22 Cree, Inc. Field effect transistor devices with low source resistance
US9029945B2 (en) 2011-05-06 2015-05-12 Cree, Inc. Field effect transistor devices with low source resistance
US9984894B2 (en) 2011-08-03 2018-05-29 Cree, Inc. Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US9373617B2 (en) 2011-09-11 2016-06-21 Cree, Inc. High current, low switching loss SiC power module
CN103918079B (zh) 2011-09-11 2017-10-31 科锐 包括具有改进布局的晶体管的高电流密度功率模块
US9640617B2 (en) 2011-09-11 2017-05-02 Cree, Inc. High performance power module
US20150255362A1 (en) 2014-03-07 2015-09-10 Infineon Technologies Ag Semiconductor Device with a Passivation Layer and Method for Producing Thereof
US11238340B1 (en) * 2016-12-21 2022-02-01 Facebook Technologies, Llc Predictive eyetracking using recurrent neural networks

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US5216264A (en) * 1989-06-07 1993-06-01 Sharp Kabushiki Kaisha Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact
JP2509713B2 (ja) * 1989-10-18 1996-06-26 シャープ株式会社 炭化珪素半導体装置およびその製造方法
US5739579A (en) * 1992-06-29 1998-04-14 Intel Corporation Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections
MY115336A (en) * 1994-02-18 2003-05-31 Ericsson Telefon Ab L M Electromigration resistant metallization structures and process for microcircuit interconnections with rf-reactively sputtered titanium tungsten and gold
KR0153878B1 (ko) * 1994-06-07 1998-10-15 쿠미하시 요시유키 탄화규소반도체장치와 그 제조방법
KR960009013A (ko) * 1994-08-18 1996-03-22 김광호 타이타늄 나이트라이드(TiN) 게이트전극 형성방법
US5742076A (en) * 1996-06-05 1998-04-21 North Carolina State University Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance

Also Published As

Publication number Publication date
WO1999026292A3 (en) 1999-07-29
US6025608A (en) 2000-02-15
WO1999026292A2 (en) 1999-05-27

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