ATE176553T1 - Puffer-struktur zwischen siliziumkarbid und galliumnitrid und sich daraus ergebende halbleiteranordnungen - Google Patents

Puffer-struktur zwischen siliziumkarbid und galliumnitrid und sich daraus ergebende halbleiteranordnungen

Info

Publication number
ATE176553T1
ATE176553T1 AT95904227T AT95904227T ATE176553T1 AT E176553 T1 ATE176553 T1 AT E176553T1 AT 95904227 T AT95904227 T AT 95904227T AT 95904227 T AT95904227 T AT 95904227T AT E176553 T1 ATE176553 T1 AT E176553T1
Authority
AT
Austria
Prior art keywords
layer
gallium nitride
silicon carbide
aluminum nitride
buffer structure
Prior art date
Application number
AT95904227T
Other languages
English (en)
Inventor
John A Edmond
Vladimir Dmitriev
Kenneth Irvine
Original Assignee
Cree Research Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Research Inc filed Critical Cree Research Inc
Application granted granted Critical
Publication of ATE176553T1 publication Critical patent/ATE176553T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous

Landscapes

  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Semiconductor Lasers (AREA)
  • Ceramic Products (AREA)
AT95904227T 1993-12-13 1994-11-01 Puffer-struktur zwischen siliziumkarbid und galliumnitrid und sich daraus ergebende halbleiteranordnungen ATE176553T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/166,229 US5393993A (en) 1993-12-13 1993-12-13 Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices

Publications (1)

Publication Number Publication Date
ATE176553T1 true ATE176553T1 (de) 1999-02-15

Family

ID=22602363

Family Applications (1)

Application Number Title Priority Date Filing Date
AT95904227T ATE176553T1 (de) 1993-12-13 1994-11-01 Puffer-struktur zwischen siliziumkarbid und galliumnitrid und sich daraus ergebende halbleiteranordnungen

Country Status (11)

Country Link
US (1) US5393993A (de)
EP (1) EP0734593B1 (de)
JP (1) JP2741705B2 (de)
KR (1) KR100253026B1 (de)
CN (1) CN1059755C (de)
AT (1) ATE176553T1 (de)
AU (1) AU1300295A (de)
CA (1) CA2177465C (de)
DE (1) DE69416427T2 (de)
TW (1) TW273051B (de)
WO (1) WO1995017019A1 (de)

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