KR910016056A - 반도체의 단결정 에피택셜 성장용의 다결정성 cvd 다이아몬드 기판 - Google Patents

반도체의 단결정 에피택셜 성장용의 다결정성 cvd 다이아몬드 기판 Download PDF

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KR910016056A
KR910016056A KR1019910002303A KR910002303A KR910016056A KR 910016056 A KR910016056 A KR 910016056A KR 1019910002303 A KR1019910002303 A KR 1019910002303A KR 910002303 A KR910002303 A KR 910002303A KR 910016056 A KR910016056 A KR 910016056A
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single crystal
cvd diamond
silicon
polycrystalline cvd
sic
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리챠드 안토니 토마스
풀튼 플레이셔 제임스
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아더 엠. 킹
제네랄 일렉트릭 캄파니
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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Abstract

내용 없음

Description

반도체의 단결정 에피택셜 성장용의 다결정성 CVD 다이아몬드 기판
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (9)

  1. (a)상승된 CVD 다이아몬드-형성온도로 가열된 실리콘의 단결정을 반송 챔버내에 위치시키는 단계; (b)탄화수소/수소 개스상 혼합물을 상기 챔버내에 제공하는 단계; (c)상기 개스상 혼합물을 상기 챔버내에서 적어도 부분적으로 분해시켜 상기 실리콘내에 다결정성 CVD 다이아몬드 층을 형성시키는 단계(이때, 그들사이에 단결정 SiC의 중간층이 형성된다); (d)상기 실리콘을 제거하여 상기 다결정성 CVD 다이아몬드에 의해 지지된 상기 단결정 SiC를 노출시키는 단계; 및 (e)상기 단결정 SiC상에 반도체 층을 성장시켜 단결정 반도체 다결정성 CVD 다이아몬드 장치(device)를 생성시키는 단계를 포함하는 단결정 반도체 장치의 제조방법.
  2. 제1항에 있어서, 상기 개스상 혼합물중에서의 탄화수소 대 수소의 몰비가 약 1 : 10 내지 1 : 1,000 범위인 방법.
  3. 제2항에 있어서, 상기 개스상 혼합물이 불활성 개스를 추가로 포함하는 방법.
  4. 제1항에 있어서, 상기 압력이 약 0.01 내지 1,000Torr 범위인 방법.
  5. 제1항에 있어서, 상기 실리콘의 단결정을 약 500 내지 1100℃ 범위의 상층된 CVD 다이아몬드-형성온도로 가열하는 방법.
  6. 제1항에 있어서, 상기 개스상 혼합물의 상기 탄화수소가 메탄올 포함하는 방법.
  7. 제1항에 있어서, 상기 실리콘을 에칭시켜 제거하는 방법.
  8. 제1항에 있어서, 상기 다결정성 CVD 다이아몬드 층의 두께가 약 10 내지 1,000㎛ 범위인 방법.
  9. 제1항에 있어서, 상기 SiC의 단결정상에서 성장된 상기 반도체층이 실리콘, SiC 및 GaAs로 이루어진 그룹중에서 선택되는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910002303A 1990-02-13 1991-02-12 반도체의 단결정 에피택셜 성장용의 다결정성 cvd 다이아몬드 기판 KR910016056A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US479,486 1990-02-13
US07/479,486 US4981818A (en) 1990-02-13 1990-02-13 Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors

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KR910016056A true KR910016056A (ko) 1991-09-30

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US (1) US4981818A (ko)
EP (1) EP0442304B1 (ko)
JP (1) JPH05109625A (ko)
KR (1) KR910016056A (ko)
AT (1) ATE115334T1 (ko)
CA (1) CA2034361A1 (ko)
DE (1) DE69105537D1 (ko)
IE (1) IE910010A1 (ko)
ZA (1) ZA91697B (ko)

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IE910010A1 (en) 1991-08-14
ZA91697B (en) 1991-12-24
DE69105537D1 (de) 1995-01-19
JPH05109625A (ja) 1993-04-30
EP0442304A2 (en) 1991-08-21
ATE115334T1 (de) 1994-12-15
EP0442304A3 (en) 1991-10-16
CA2034361A1 (en) 1991-08-14
US4981818A (en) 1991-01-01

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