KR910016056A - 반도체의 단결정 에피택셜 성장용의 다결정성 cvd 다이아몬드 기판 - Google Patents
반도체의 단결정 에피택셜 성장용의 다결정성 cvd 다이아몬드 기판 Download PDFInfo
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- KR910016056A KR910016056A KR1019910002303A KR910002303A KR910016056A KR 910016056 A KR910016056 A KR 910016056A KR 1019910002303 A KR1019910002303 A KR 1019910002303A KR 910002303 A KR910002303 A KR 910002303A KR 910016056 A KR910016056 A KR 910016056A
- Authority
- KR
- South Korea
- Prior art keywords
- single crystal
- cvd diamond
- silicon
- polycrystalline cvd
- sic
- Prior art date
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- 239000013078 crystal Substances 0.000 title claims abstract 15
- 229910003460 diamond Inorganic materials 0.000 title claims abstract 11
- 239000010432 diamond Substances 0.000 title claims abstract 11
- 239000004065 semiconductor Substances 0.000 title claims abstract 7
- 239000000758 substrate Substances 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract 11
- 239000010703 silicon Substances 0.000 claims abstract 11
- 238000000034 method Methods 0.000 claims abstract 10
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract 4
- 229930195733 hydrocarbon Natural products 0.000 claims abstract 4
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract 2
- 239000001257 hydrogen Substances 0.000 claims abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract 2
- 229910003465 moissanite Inorganic materials 0.000 claims abstract 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract 2
- 239000000203 mixture Substances 0.000 claims 5
- 239000007789 gas Substances 0.000 claims 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims 3
- 239000011261 inert gas Substances 0.000 claims 1
- 230000003698 anagen phase Effects 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000008246 gaseous mixture Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
- H01L21/441—Deposition of conductive or insulating materials for electrodes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02447—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02527—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/135—Removal of substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (9)
- (a)상승된 CVD 다이아몬드-형성온도로 가열된 실리콘의 단결정을 반송 챔버내에 위치시키는 단계; (b)탄화수소/수소 개스상 혼합물을 상기 챔버내에 제공하는 단계; (c)상기 개스상 혼합물을 상기 챔버내에서 적어도 부분적으로 분해시켜 상기 실리콘내에 다결정성 CVD 다이아몬드 층을 형성시키는 단계(이때, 그들사이에 단결정 SiC의 중간층이 형성된다); (d)상기 실리콘을 제거하여 상기 다결정성 CVD 다이아몬드에 의해 지지된 상기 단결정 SiC를 노출시키는 단계; 및 (e)상기 단결정 SiC상에 반도체 층을 성장시켜 단결정 반도체 다결정성 CVD 다이아몬드 장치(device)를 생성시키는 단계를 포함하는 단결정 반도체 장치의 제조방법.
- 제1항에 있어서, 상기 개스상 혼합물중에서의 탄화수소 대 수소의 몰비가 약 1 : 10 내지 1 : 1,000 범위인 방법.
- 제2항에 있어서, 상기 개스상 혼합물이 불활성 개스를 추가로 포함하는 방법.
- 제1항에 있어서, 상기 압력이 약 0.01 내지 1,000Torr 범위인 방법.
- 제1항에 있어서, 상기 실리콘의 단결정을 약 500 내지 1100℃ 범위의 상층된 CVD 다이아몬드-형성온도로 가열하는 방법.
- 제1항에 있어서, 상기 개스상 혼합물의 상기 탄화수소가 메탄올 포함하는 방법.
- 제1항에 있어서, 상기 실리콘을 에칭시켜 제거하는 방법.
- 제1항에 있어서, 상기 다결정성 CVD 다이아몬드 층의 두께가 약 10 내지 1,000㎛ 범위인 방법.
- 제1항에 있어서, 상기 SiC의 단결정상에서 성장된 상기 반도체층이 실리콘, SiC 및 GaAs로 이루어진 그룹중에서 선택되는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US479,486 | 1990-02-13 | ||
US07/479,486 US4981818A (en) | 1990-02-13 | 1990-02-13 | Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors |
Publications (1)
Publication Number | Publication Date |
---|---|
KR910016056A true KR910016056A (ko) | 1991-09-30 |
Family
ID=23904216
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910002303A KR910016056A (ko) | 1990-02-13 | 1991-02-12 | 반도체의 단결정 에피택셜 성장용의 다결정성 cvd 다이아몬드 기판 |
Country Status (9)
Country | Link |
---|---|
US (1) | US4981818A (ko) |
EP (1) | EP0442304B1 (ko) |
JP (1) | JPH05109625A (ko) |
KR (1) | KR910016056A (ko) |
AT (1) | ATE115334T1 (ko) |
CA (1) | CA2034361A1 (ko) |
DE (1) | DE69105537D1 (ko) |
IE (1) | IE910010A1 (ko) |
ZA (1) | ZA91697B (ko) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5131963A (en) * | 1987-11-16 | 1992-07-21 | Crystallume | Silicon on insulator semiconductor composition containing thin synthetic diamone films |
JPH06103757B2 (ja) * | 1989-06-22 | 1994-12-14 | 株式会社半導体エネルギー研究所 | ダイヤモンド電子装置 |
JP2775903B2 (ja) * | 1989-10-04 | 1998-07-16 | 住友電気工業株式会社 | ダイヤモンド半導体素子 |
JPH03163820A (ja) * | 1989-11-22 | 1991-07-15 | Tokai Univ | ダイヤモンドn型半導体およびダイヤモンドp―n接合ダイオードの製造方法 |
US4981818A (en) * | 1990-02-13 | 1991-01-01 | General Electric Company | Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors |
GB9021689D0 (en) * | 1990-10-05 | 1990-11-21 | De Beers Ind Diamond | Diamond neutron detector |
CA2049673A1 (en) * | 1990-11-26 | 1992-05-27 | James F. Fleischer | Cvd diamond by alternating chemical reactions |
JP3028660B2 (ja) * | 1991-10-21 | 2000-04-04 | 住友電気工業株式会社 | ダイヤモンドヒートシンクの製造方法 |
FR2678647A1 (fr) * | 1991-07-05 | 1993-01-08 | Centre Nat Rech Scient | Procede de fabrication d'un cristal a gradient de maille. |
US5313094A (en) * | 1992-01-28 | 1994-05-17 | International Business Machines Corportion | Thermal dissipation of integrated circuits using diamond paths |
US5276338A (en) * | 1992-05-15 | 1994-01-04 | International Business Machines Corporation | Bonded wafer structure having a buried insulation layer |
US5236545A (en) * | 1992-10-05 | 1993-08-17 | The Board Of Governors Of Wayne State University | Method for heteroepitaxial diamond film development |
US5272104A (en) * | 1993-03-11 | 1993-12-21 | Harris Corporation | Bonded wafer process incorporating diamond insulator |
US5376579A (en) * | 1993-07-02 | 1994-12-27 | The United States Of America As Represented By The Secretary Of The Air Force | Schemes to form silicon-on-diamond structure |
US5354717A (en) * | 1993-07-29 | 1994-10-11 | Motorola, Inc. | Method for making a substrate structure with improved heat dissipation |
JP3023056B2 (ja) * | 1994-09-28 | 2000-03-21 | 東洋鋼鈑株式会社 | ダイヤモンド被覆ろう付け製品の製造方法 |
US5455432A (en) * | 1994-10-11 | 1995-10-03 | Kobe Steel Usa | Diamond semiconductor device with carbide interlayer |
US7011134B2 (en) * | 2000-10-13 | 2006-03-14 | Chien-Min Sung | Casting method for producing surface acoustic wave devices |
US7132309B2 (en) * | 2003-04-22 | 2006-11-07 | Chien-Min Sung | Semiconductor-on-diamond devices and methods of forming |
US6814130B2 (en) | 2000-10-13 | 2004-11-09 | Chien-Min Sung | Methods of making diamond tools using reverse casting of chemical vapor deposition |
US7012011B2 (en) * | 2004-06-24 | 2006-03-14 | Intel Corporation | Wafer-level diamond spreader |
US7394103B2 (en) * | 2004-09-13 | 2008-07-01 | Uchicago Argonne, Llc | All diamond self-aligned thin film transistor |
US7675079B1 (en) | 2004-10-28 | 2010-03-09 | Kley Victor B | Diamond coating of silicon-carbide LEDs |
US20060202209A1 (en) * | 2005-03-09 | 2006-09-14 | Kelman Maxim B | Limiting net curvature in a wafer |
EP1895579B1 (en) * | 2005-06-20 | 2016-06-15 | Nippon Telegraph And Telephone Corporation | Diamond semiconductor element and process for producing the same |
JP4797571B2 (ja) * | 2005-10-26 | 2011-10-19 | トヨタ自動車株式会社 | 炭化珪素半導体材料の製造方法 |
US8157914B1 (en) | 2007-02-07 | 2012-04-17 | Chien-Min Sung | Substrate surface modifications for compositional gradation of crystalline materials and associated products |
US8309967B2 (en) * | 2007-05-31 | 2012-11-13 | Chien-Min Sung | Diamond LED devices and associated methods |
US7799600B2 (en) * | 2007-05-31 | 2010-09-21 | Chien-Min Sung | Doped diamond LED devices and associated methods |
US7799599B1 (en) * | 2007-05-31 | 2010-09-21 | Chien-Min Sung | Single crystal silicon carbide layers on diamond and associated methods |
US7781256B2 (en) * | 2007-05-31 | 2010-08-24 | Chien-Min Sung | Semiconductor-on-diamond devices and associated methods |
US7846767B1 (en) | 2007-09-06 | 2010-12-07 | Chien-Min Sung | Semiconductor-on-diamond devices and associated methods |
GB201010705D0 (en) * | 2010-06-25 | 2010-08-11 | Element Six Ltd | Substrates for semiconductor devices |
GB201121659D0 (en) | 2011-12-16 | 2012-01-25 | Element Six Ltd | Substrates for semiconductor devices |
GB201121655D0 (en) | 2011-12-16 | 2012-01-25 | Element Six Ltd | Substrates for semiconductor devices |
GB201222352D0 (en) * | 2012-12-12 | 2013-01-23 | Element Six Ltd | Substrates for semiconductor devices |
EP2936550B1 (en) | 2012-12-18 | 2021-05-19 | RFHIC Corporation | Substrates for semiconductor devices |
US9469918B2 (en) * | 2014-01-24 | 2016-10-18 | Ii-Vi Incorporated | Substrate including a diamond layer and a composite layer of diamond and silicon carbide, and, optionally, silicon |
US10487395B2 (en) * | 2014-06-25 | 2019-11-26 | Sumitomo Electric Industries, Ltd. | Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate |
US10584412B2 (en) | 2016-03-08 | 2020-03-10 | Ii-Vi Delaware, Inc. | Substrate comprising a layer of silicon and a layer of diamond having an optically finished (or a dense) silicon-diamond interface |
JP6763347B2 (ja) * | 2017-06-07 | 2020-09-30 | 株式会社Sumco | 窒化物半導体基板の製造方法および窒化物半導体基板 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61251158A (ja) * | 1985-04-30 | 1986-11-08 | Sumitomo Electric Ind Ltd | 放熱基板 |
JPH0754834B2 (ja) * | 1986-03-26 | 1995-06-07 | 新技術事業団 | ダイヤモンド膜製半導体基板の製造方法 |
US5131963A (en) * | 1987-11-16 | 1992-07-21 | Crystallume | Silicon on insulator semiconductor composition containing thin synthetic diamone films |
US4981818A (en) * | 1990-02-13 | 1991-01-01 | General Electric Company | Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors |
-
1990
- 1990-02-13 US US07/479,486 patent/US4981818A/en not_active Expired - Lifetime
-
1991
- 1991-01-03 IE IE001091A patent/IE910010A1/en unknown
- 1991-01-17 CA CA002034361A patent/CA2034361A1/en not_active Abandoned
- 1991-01-25 DE DE69105537T patent/DE69105537D1/de not_active Expired - Lifetime
- 1991-01-25 EP EP91100954A patent/EP0442304B1/en not_active Expired - Lifetime
- 1991-01-25 AT AT91100954T patent/ATE115334T1/de not_active IP Right Cessation
- 1991-01-30 ZA ZA91697A patent/ZA91697B/xx unknown
- 1991-02-08 JP JP3037700A patent/JPH05109625A/ja not_active Withdrawn
- 1991-02-12 KR KR1019910002303A patent/KR910016056A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP0442304B1 (en) | 1994-12-07 |
IE910010A1 (en) | 1991-08-14 |
ZA91697B (en) | 1991-12-24 |
DE69105537D1 (de) | 1995-01-19 |
JPH05109625A (ja) | 1993-04-30 |
EP0442304A2 (en) | 1991-08-21 |
ATE115334T1 (de) | 1994-12-15 |
EP0442304A3 (en) | 1991-10-16 |
CA2034361A1 (en) | 1991-08-14 |
US4981818A (en) | 1991-01-01 |
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