ATE115334T1 - Polykristallines cvd-diamantsubstrat für epitaktisches aufwachsen von einkristallhalbleitern. - Google Patents

Polykristallines cvd-diamantsubstrat für epitaktisches aufwachsen von einkristallhalbleitern.

Info

Publication number
ATE115334T1
ATE115334T1 AT91100954T AT91100954T ATE115334T1 AT E115334 T1 ATE115334 T1 AT E115334T1 AT 91100954 T AT91100954 T AT 91100954T AT 91100954 T AT91100954 T AT 91100954T AT E115334 T1 ATE115334 T1 AT E115334T1
Authority
AT
Austria
Prior art keywords
single crystal
cvd diamond
polycrystalline cvd
silicon
sic
Prior art date
Application number
AT91100954T
Other languages
English (en)
Inventor
Thomas Richard Antony
James Fulton Fleischer
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Application granted granted Critical
Publication of ATE115334T1 publication Critical patent/ATE115334T1/de

Links

Classifications

    • H10D64/011—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • H10P14/24—
    • H10P14/2905—
    • H10P14/3208—
    • H10P14/3406—
    • H10P14/3421—
    • H10W40/254—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
AT91100954T 1990-02-13 1991-01-25 Polykristallines cvd-diamantsubstrat für epitaktisches aufwachsen von einkristallhalbleitern. ATE115334T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/479,486 US4981818A (en) 1990-02-13 1990-02-13 Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors

Publications (1)

Publication Number Publication Date
ATE115334T1 true ATE115334T1 (de) 1994-12-15

Family

ID=23904216

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91100954T ATE115334T1 (de) 1990-02-13 1991-01-25 Polykristallines cvd-diamantsubstrat für epitaktisches aufwachsen von einkristallhalbleitern.

Country Status (9)

Country Link
US (1) US4981818A (de)
EP (1) EP0442304B1 (de)
JP (1) JPH05109625A (de)
KR (1) KR910016056A (de)
AT (1) ATE115334T1 (de)
CA (1) CA2034361A1 (de)
DE (1) DE69105537D1 (de)
IE (1) IE910010A1 (de)
ZA (1) ZA91697B (de)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5131963A (en) * 1987-11-16 1992-07-21 Crystallume Silicon on insulator semiconductor composition containing thin synthetic diamone films
JPH06103757B2 (ja) * 1989-06-22 1994-12-14 株式会社半導体エネルギー研究所 ダイヤモンド電子装置
JP2775903B2 (ja) * 1989-10-04 1998-07-16 住友電気工業株式会社 ダイヤモンド半導体素子
JPH03163820A (ja) * 1989-11-22 1991-07-15 Tokai Univ ダイヤモンドｎ型半導体およびダイヤモンドｐ―ｎ接合ダイオードの製造方法
US4981818A (en) * 1990-02-13 1991-01-01 General Electric Company Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors
GB9021689D0 (en) * 1990-10-05 1990-11-21 De Beers Ind Diamond Diamond neutron detector
CA2049673A1 (en) * 1990-11-26 1992-05-27 James F. Fleischer Cvd diamond by alternating chemical reactions
JP3028660B2 (ja) * 1991-10-21 2000-04-04 住友電気工業株式会社 ダイヤモンドヒートシンクの製造方法
FR2678647A1 (fr) * 1991-07-05 1993-01-08 Centre Nat Rech Scient Procede de fabrication d'un cristal a gradient de maille.
US5313094A (en) * 1992-01-28 1994-05-17 International Business Machines Corportion Thermal dissipation of integrated circuits using diamond paths
US5276338A (en) * 1992-05-15 1994-01-04 International Business Machines Corporation Bonded wafer structure having a buried insulation layer
US5236545A (en) * 1992-10-05 1993-08-17 The Board Of Governors Of Wayne State University Method for heteroepitaxial diamond film development
US5272104A (en) * 1993-03-11 1993-12-21 Harris Corporation Bonded wafer process incorporating diamond insulator
US5376579A (en) * 1993-07-02 1994-12-27 The United States Of America As Represented By The Secretary Of The Air Force Schemes to form silicon-on-diamond structure
US5354717A (en) * 1993-07-29 1994-10-11 Motorola, Inc. Method for making a substrate structure with improved heat dissipation
JP3023056B2 (ja) * 1994-09-28 2000-03-21 東洋鋼鈑株式会社 ダイヤモンド被覆ろう付け製品の製造方法
US5455432A (en) * 1994-10-11 1995-10-03 Kobe Steel Usa Diamond semiconductor device with carbide interlayer
US6814130B2 (en) 2000-10-13 2004-11-09 Chien-Min Sung Methods of making diamond tools using reverse casting of chemical vapor deposition
US7011134B2 (en) * 2000-10-13 2006-03-14 Chien-Min Sung Casting method for producing surface acoustic wave devices
US7132309B2 (en) * 2003-04-22 2006-11-07 Chien-Min Sung Semiconductor-on-diamond devices and methods of forming
US7012011B2 (en) * 2004-06-24 2006-03-14 Intel Corporation Wafer-level diamond spreader
US7394103B2 (en) * 2004-09-13 2008-07-01 Uchicago Argonne, Llc All diamond self-aligned thin film transistor
US7675079B1 (en) 2004-10-28 2010-03-09 Kley Victor B Diamond coating of silicon-carbide LEDs
US20060202209A1 (en) * 2005-03-09 2006-09-14 Kelman Maxim B Limiting net curvature in a wafer
CN100508144C (zh) * 2005-06-20 2009-07-01 日本电信电话株式会社 金刚石半导体元件及其制造方法
JP4797571B2 (ja) * 2005-10-26 2011-10-19 トヨタ自動車株式会社 炭化珪素半導体材料の製造方法
US8157914B1 (en) 2007-02-07 2012-04-17 Chien-Min Sung Substrate surface modifications for compositional gradation of crystalline materials and associated products
US7781256B2 (en) * 2007-05-31 2010-08-24 Chien-Min Sung Semiconductor-on-diamond devices and associated methods
US7799600B2 (en) * 2007-05-31 2010-09-21 Chien-Min Sung Doped diamond LED devices and associated methods
US8309967B2 (en) 2007-05-31 2012-11-13 Chien-Min Sung Diamond LED devices and associated methods
US7799599B1 (en) * 2007-05-31 2010-09-21 Chien-Min Sung Single crystal silicon carbide layers on diamond and associated methods
US7846767B1 (en) 2007-09-06 2010-12-07 Chien-Min Sung Semiconductor-on-diamond devices and associated methods
GB201010705D0 (en) * 2010-06-25 2010-08-11 Element Six Ltd Substrates for semiconductor devices
GB201121655D0 (en) 2011-12-16 2012-01-25 Element Six Ltd Substrates for semiconductor devices
GB201121659D0 (en) 2011-12-16 2012-01-25 Element Six Ltd Substrates for semiconductor devices
GB201222352D0 (en) * 2012-12-12 2013-01-23 Element Six Ltd Substrates for semiconductor devices
WO2014095373A1 (en) 2012-12-18 2014-06-26 Element Six Limited Substrates for semiconductor devices
US9469918B2 (en) * 2014-01-24 2016-10-18 Ii-Vi Incorporated Substrate including a diamond layer and a composite layer of diamond and silicon carbide, and, optionally, silicon
US10487395B2 (en) * 2014-06-25 2019-11-26 Sumitomo Electric Industries, Ltd. Method of manufacturing diamond substrate, diamond substrate, and diamond composite substrate
US10584412B2 (en) 2016-03-08 2020-03-10 Ii-Vi Delaware, Inc. Substrate comprising a layer of silicon and a layer of diamond having an optically finished (or a dense) silicon-diamond interface
JP6763347B2 (ja) * 2017-06-07 2020-09-30 株式会社Sumco 窒化物半導体基板の製造方法および窒化物半導体基板
JP7253208B2 (ja) * 2021-07-09 2023-04-06 株式会社ディスコ ダイヤモンド成膜方法及びダイヤモンド成膜装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61251158A (ja) * 1985-04-30 1986-11-08 Sumitomo Electric Ind Ltd 放熱基板
US5131963A (en) * 1987-11-16 1992-07-21 Crystallume Silicon on insulator semiconductor composition containing thin synthetic diamone films
US4981818A (en) * 1990-02-13 1991-01-01 General Electric Company Polycrystalline CVD diamond substrate for single crystal epitaxial growth of semiconductors

Also Published As

Publication number Publication date
EP0442304A2 (de) 1991-08-21
ZA91697B (en) 1991-12-24
CA2034361A1 (en) 1991-08-14
JPH05109625A (ja) 1993-04-30
DE69105537D1 (de) 1995-01-19
KR910016056A (ko) 1991-09-30
IE910010A1 (en) 1991-08-14
EP0442304B1 (de) 1994-12-07
EP0442304A3 (en) 1991-10-16
US4981818A (en) 1991-01-01

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