ATE50886T1 - Traegerscheibe fuer halbleiteranordnung aus siliziumcarbid. - Google Patents

Traegerscheibe fuer halbleiteranordnung aus siliziumcarbid.

Info

Publication number
ATE50886T1
ATE50886T1 AT86105672T AT86105672T ATE50886T1 AT E50886 T1 ATE50886 T1 AT E50886T1 AT 86105672 T AT86105672 T AT 86105672T AT 86105672 T AT86105672 T AT 86105672T AT E50886 T1 ATE50886 T1 AT E50886T1
Authority
AT
Austria
Prior art keywords
silicon carbide
beta silicon
substrate
beta
carbide
Prior art date
Application number
AT86105672T
Other languages
English (en)
Inventor
Rointan F Bunshah
James D Parsons
Oscar M Stafsudd
Original Assignee
Univ California
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ California filed Critical Univ California
Application granted granted Critical
Publication of ATE50886T1 publication Critical patent/ATE50886T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
  • Chemical Vapour Deposition (AREA)
  • Ceramic Products (AREA)
AT86105672T 1985-05-23 1986-04-24 Traegerscheibe fuer halbleiteranordnung aus siliziumcarbid. ATE50886T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/737,367 US4767666A (en) 1985-05-23 1985-05-23 Wafer base for silicon carbide semiconductor device
EP86105672A EP0209648B1 (de) 1985-05-23 1986-04-24 Trägerscheibe für Halbleiteranordnung aus Siliziumcarbid

Publications (1)

Publication Number Publication Date
ATE50886T1 true ATE50886T1 (de) 1990-03-15

Family

ID=24963643

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86105672T ATE50886T1 (de) 1985-05-23 1986-04-24 Traegerscheibe fuer halbleiteranordnung aus siliziumcarbid.

Country Status (6)

Country Link
US (1) US4767666A (de)
EP (2) EP0222908A1 (de)
JP (2) JPS62502043A (de)
AT (1) ATE50886T1 (de)
DE (1) DE3669418D1 (de)
WO (1) WO1986007194A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2573480B2 (ja) * 1985-11-22 1997-01-22 東芝セラミックス 株式会社 半導体熱処理用治具
US4978567A (en) * 1988-03-31 1990-12-18 Materials Technology Corporation, Subsidiary Of The Carbon/Graphite Group, Inc. Wafer holding fixture for chemical reaction processes in rapid thermal processing equipment and method for making same
US5055319A (en) * 1990-04-02 1991-10-08 The Regents Of The University Of California Controlled high rate deposition of metal oxide films
US5190890A (en) * 1990-06-04 1993-03-02 Advanced Technology Materials, Inc. Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates, and method of making the same
US5043773A (en) * 1990-06-04 1991-08-27 Advanced Technology Materials, Inc. Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates
JPH0529621A (ja) * 1991-07-19 1993-02-05 Rohm Co Ltd 炭化珪素薄膜回路素子とその製造方法
DE4135076A1 (de) * 1991-10-24 1993-04-29 Daimler Benz Ag Mehrschichtige, monokristallines siliziumkarbid enthaltende zusammensetzung
US5492752A (en) * 1992-12-07 1996-02-20 Oregon Graduate Institute Of Science And Technology Substrates for the growth of 3C-silicon carbide
US6650870B2 (en) 1995-12-15 2003-11-18 Innovision Research & Technology Plc Data communication apparatus
DE19803423C2 (de) * 1998-01-29 2001-02-08 Siemens Ag Substrathalterung für SiC-Epitaxie und Verfahren zum Herstellen eines Einsatzes für einen Suszeptor
CA2522606A1 (en) 2003-04-16 2004-11-25 The Regents Of The University Of California Metal mems devices and methods of making same
US7767498B2 (en) * 2005-08-25 2010-08-03 Vitex Systems, Inc. Encapsulated devices and method of making
US20070187888A1 (en) * 2005-11-29 2007-08-16 Paul Dures Lottery game card having a Sudoku-themed game

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3176204A (en) * 1960-12-22 1965-03-30 Raytheon Co Device composed of different semiconductive materials
IL63802A (en) * 1981-09-11 1984-10-31 Iscar Ltd Sintered hard metal products having a multi-layer wear-resistant coating

Also Published As

Publication number Publication date
JPS62502043A (ja) 1987-08-13
EP0209648A1 (de) 1987-01-28
US4767666A (en) 1988-08-30
EP0222908A1 (de) 1987-05-27
DE3669418D1 (de) 1990-04-12
JPH0556851B2 (de) 1993-08-20
WO1986007194A1 (en) 1986-12-04
JPS61272922A (ja) 1986-12-03
EP0209648B1 (de) 1990-03-07

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