KR880701692A - 질화 알루미늄 소결체 및 그 반도체 기판 - Google Patents

질화 알루미늄 소결체 및 그 반도체 기판

Info

Publication number
KR880701692A
KR880701692A KR1019880700388A KR880700388A KR880701692A KR 880701692 A KR880701692 A KR 880701692A KR 1019880700388 A KR1019880700388 A KR 1019880700388A KR 880700388 A KR880700388 A KR 880700388A KR 880701692 A KR880701692 A KR 880701692A
Authority
KR
South Korea
Prior art keywords
semiconductor substrate
aluminum nitride
sintered aluminum
sintered
nitride
Prior art date
Application number
KR1019880700388A
Other languages
English (en)
Other versions
KR940000729B1 (ko
Inventor
유스께 이요리
히데꼬 후꾸시마
Original Assignee
히다찌 긴조꾸 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 히다찌 긴조꾸 가부시끼가이샤 filed Critical 히다찌 긴조꾸 가부시끼가이샤
Publication of KR880701692A publication Critical patent/KR880701692A/ko
Application granted granted Critical
Publication of KR940000729B1 publication Critical patent/KR940000729B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5031—Alumina
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5127—Cu, e.g. Cu-CuO eutectic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5144—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal with a composition mainly composed of one or more of the metals of the iron group
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
KR1019880700388A 1986-08-13 1987-08-13 질화 알루미늄 소결체 및 그 반도체 기판 KR940000729B1 (ko)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP189,772 1986-08-13
JP18977286 1986-08-13
JP220,838 1986-09-20
JP22083886 1986-09-20
JP17779187 1987-07-16
JP177,791 1987-07-16
PCT/JP1987/000607 WO1988001259A1 (fr) 1986-08-13 1987-08-13 Produit de filtrage de nitrure d'aluminium et substrat semi-conducteur ainsi forme

Publications (2)

Publication Number Publication Date
KR880701692A true KR880701692A (ko) 1988-11-04
KR940000729B1 KR940000729B1 (ko) 1994-01-28

Family

ID=27324478

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880700388A KR940000729B1 (ko) 1986-08-13 1987-08-13 질화 알루미늄 소결체 및 그 반도체 기판

Country Status (5)

Country Link
US (1) US5077244A (ko)
EP (1) EP0286690B1 (ko)
KR (1) KR940000729B1 (ko)
DE (1) DE3787968T2 (ko)
WO (1) WO1988001259A1 (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01203270A (ja) * 1988-02-08 1989-08-16 Sumitomo Electric Ind Ltd 高熱伝導性窒化アルミニウム焼結体及びその製造法
GB2222721B (en) * 1988-08-23 1993-07-28 Nobuo Mikoshiba Cooling semiconductor devices
FR2644665B1 (fr) * 1989-03-16 1996-05-03 Air Liquide Procede d'elaboration de moyens de connexions electriques, en particulier de substrats d'interconnexion pour circuits hybrides
US5830570A (en) * 1989-12-19 1998-11-03 Kyocera Corporation Aluminum nitride substrate and process for preparation thereof
US5455322A (en) * 1992-06-12 1995-10-03 Lanxide Technology Company, Lp Aluminum nitride from inorganic polymers
JPH06206772A (ja) * 1992-11-18 1994-07-26 Toshiba Corp 窒化アルミニウム焼結体およびセラミック回路基板
JPH07109573A (ja) * 1993-10-12 1995-04-25 Semiconductor Energy Lab Co Ltd ガラス基板および加熱処理方法
DE69635908T2 (de) * 1995-08-03 2006-11-23 Ngk Insulators, Ltd., Nagoya Gesinterte Aluminiumnitridkörper und deren Verwendung als Subtrat in einer Vorrichtung zur Herstellung von Halbleitern
US5705450A (en) * 1996-12-17 1998-01-06 The Dow Chemical Company A1N sintered body containing a rare earth aluminum oxynitride and method to produce said body
JPH10275752A (ja) * 1997-03-28 1998-10-13 Ube Ind Ltd 張合わせウエハ−及びその製造方法、基板
US6316116B1 (en) * 1999-04-30 2001-11-13 Kabushiki Kaisha Toshiba Ceramic circuit board and method of manufacturing the same
JP4761617B2 (ja) * 2000-12-07 2011-08-31 株式会社東芝 窒化アルミニウム焼結体およびその製造方法、並びにそれを用いた電子用部品
WO2007034955A1 (ja) * 2005-09-26 2007-03-29 Tokuyama Corporation 発光素子搭載用セラミックス焼結体
US7626448B2 (en) 2005-09-28 2009-12-01 Hynix Semiconductor, Inc. Internal voltage generator
JP5844299B2 (ja) * 2013-03-25 2016-01-13 株式会社日立製作所 接合材、接合構造体
CN113185303A (zh) * 2021-05-12 2021-07-30 深圳市丁鼎陶瓷科技有限公司 一种包覆氮化铝粉体的制备方法及制得的氮化铝陶瓷基板

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1366092A (en) * 1971-07-23 1974-09-11 Borax Cons Ltd Inhibiting grain-growth in refractory materials
JPS56149378A (en) * 1980-04-21 1981-11-19 Toyota Motor Co Ltd Manufacture of silicon nitride sintered body
DE3333406A1 (de) * 1982-09-17 1984-03-22 Tokuyama Soda K.K., Tokuyama, Yamaguchi Feines aluminiumnitridpulver, verfahren zu seiner herstellung und es enthaltendes mittel
DE3248103C1 (de) * 1982-12-24 1987-11-12 W.C. Heraeus Gmbh, 6450 Hanau Tiegel zum Ziehen von Einkristallen
JPS59164684A (ja) * 1983-03-10 1984-09-17 日立化成工業株式会社 非酸化物系セラミツク配線板の製造方法
JPS60127267A (ja) * 1983-12-12 1985-07-06 株式会社東芝 高熱伝導性窒化アルミニウム焼結体の製造方法
JPS60171270A (ja) * 1984-02-13 1985-09-04 株式会社トクヤマ 透光性を有する窒化アルミニウム焼結体製造用原料組成物
DE3587481T2 (de) * 1984-02-27 1993-12-16 Toshiba Kawasaki Kk Schaltungssubstrat mit hoher Wärmeleitfähigkeit.
CH660176A5 (de) * 1984-07-06 1987-03-31 Bbc Brown Boveri & Cie Metall-keramik-verbundelement und verfahren zu dessen herstellung.
US4578364A (en) * 1984-12-07 1986-03-25 General Electric Company High thermal conductivity ceramic body of aluminum nitride
JPH0627034B2 (ja) * 1985-07-18 1994-04-13 住友電気工業株式会社 窒化アルミニウム焼結体の製造方法

Also Published As

Publication number Publication date
WO1988001259A1 (fr) 1988-02-25
DE3787968D1 (de) 1993-12-02
DE3787968T2 (de) 1994-02-17
EP0286690A4 (en) 1990-03-12
EP0286690B1 (en) 1993-10-27
KR940000729B1 (ko) 1994-01-28
EP0286690A1 (en) 1988-10-19
US5077244A (en) 1991-12-31

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