GB2222721B - Cooling semiconductor devices - Google Patents

Cooling semiconductor devices

Info

Publication number
GB2222721B
GB2222721B GB8918867A GB8918867A GB2222721B GB 2222721 B GB2222721 B GB 2222721B GB 8918867 A GB8918867 A GB 8918867A GB 8918867 A GB8918867 A GB 8918867A GB 2222721 B GB2222721 B GB 2222721B
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
cooling semiconductor
cooling
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB8918867A
Other versions
GB8918867D0 (en
GB2222721A (en
Inventor
Nobuo Mikoshiba
Kazuo Tsubouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63209765A external-priority patent/JPH07120735B2/en
Priority claimed from JP20976488A external-priority patent/JPH0258254A/en
Application filed by Individual filed Critical Individual
Publication of GB8918867D0 publication Critical patent/GB8918867D0/en
Publication of GB2222721A publication Critical patent/GB2222721A/en
Application granted granted Critical
Publication of GB2222721B publication Critical patent/GB2222721B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01039—Yttrium [Y]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Thin Film Transistor (AREA)
GB8918867A 1988-08-23 1989-08-18 Cooling semiconductor devices Expired - Fee Related GB2222721B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63209765A JPH07120735B2 (en) 1988-08-23 1988-08-23 Semiconductor chip
JP20976488A JPH0258254A (en) 1988-08-23 1988-08-23 Semiconductor element

Publications (3)

Publication Number Publication Date
GB8918867D0 GB8918867D0 (en) 1989-09-27
GB2222721A GB2222721A (en) 1990-03-14
GB2222721B true GB2222721B (en) 1993-07-28

Family

ID=26517641

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8918867A Expired - Fee Related GB2222721B (en) 1988-08-23 1989-08-18 Cooling semiconductor devices

Country Status (3)

Country Link
DE (1) DE3927866A1 (en)
FR (1) FR2636777B1 (en)
GB (1) GB2222721B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5057908A (en) * 1990-07-10 1991-10-15 Iowa State University Research Foundation, Inc. High power semiconductor device with integral heat sink
DE59209470D1 (en) * 1991-06-24 1998-10-01 Siemens Ag Semiconductor component and method for its production
US5396403A (en) * 1993-07-06 1995-03-07 Hewlett-Packard Company Heat sink assembly with thermally-conductive plate for a plurality of integrated circuits on a substrate
FR2754390A1 (en) * 1996-10-07 1998-04-10 Gec Alsthom Transport Sa POWER MODULE WITH ELECTRICAL SEMICONDUCTOR POWER COMPONENTS AND HIGH POWER SWITCH COMPRISING AT LEAST ONE SUCH POWER MODULE
US6620045B2 (en) 2001-04-20 2003-09-16 King Show Games, Llc System and method for executing trades for bonus activity in gaming systems
US7704142B2 (en) 2001-04-20 2010-04-27 King Show Games, Inc. System and method for facilitating trades for bonus activity in gaming systems
JP2006229180A (en) 2005-01-24 2006-08-31 Toyota Motor Corp Semiconductor module and device

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1265007A (en) * 1968-12-09 1972-03-01
US3686748A (en) * 1970-04-13 1972-08-29 William E Engeler Method and apparatus for providng thermal contact and electrical isolation of integrated circuits
GB1320924A (en) * 1969-07-22 1973-06-20 Gen Electric Semiconductor device with thermally conductive dielectric barrier
EP0015053A1 (en) * 1979-01-27 1980-09-03 LUCAS INDUSTRIES public limited company A method of manufacturing a semi-conductor power device assembly and an assembly thereby produced
EP0040552A1 (en) * 1980-05-20 1981-11-25 De Beers Industrial Diamond Division (Proprietary) Limited Heat sinks
EP0153737A2 (en) * 1984-02-27 1985-09-04 Kabushiki Kaisha Toshiba Circuit substrate having high thermal conductivity
EP0153618A2 (en) * 1984-02-24 1985-09-04 Kabushiki Kaisha Toshiba Method for preparing highly heat-conductive substrate and copper wiring sheet usable in the same
EP0201170A1 (en) * 1985-04-12 1986-11-12 Raymonde Gene Clifford Artus Heat sink
EP0253295A1 (en) * 1986-07-09 1988-01-20 Tektronix, Inc. Thermally enhanced LSI integrated circuit package
EP0286690A1 (en) * 1986-08-13 1988-10-19 Hitachi Metals, Ltd. Aluminum nitride and semiconductor substrate formed therefrom
GB2214719A (en) * 1988-01-26 1989-09-06 Gen Electric Co Plc Housing for electronic devices

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2030809A1 (en) * 1970-06-23 1971-12-30 Semikron Gleichrichterbau Semiconductor arrangement
US4236167A (en) * 1978-02-06 1980-11-25 Rca Corporation Stepped oxide, high voltage MOS transistor with near intrinsic channel regions of different doping levels
JPS56101777A (en) * 1980-01-18 1981-08-14 Futaba Corp Mos type semiconductor device
US4256792A (en) * 1980-01-25 1981-03-17 Honeywell Inc. Composite electronic substrate of alumina uniformly needled through with aluminum nitride
US4620215A (en) * 1982-04-16 1986-10-28 Amdahl Corporation Integrated circuit packaging systems with double surface heat dissipation
JPS6066843A (en) * 1983-09-22 1985-04-17 Hitachi Ltd Integrated circuit package
JPS61212045A (en) * 1985-03-18 1986-09-20 Hitachi Ltd Semiconductor device
JPH07107921B2 (en) * 1985-11-15 1995-11-15 富士通株式会社 Plastic / Package type semiconductor device

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1265007A (en) * 1968-12-09 1972-03-01
GB1320924A (en) * 1969-07-22 1973-06-20 Gen Electric Semiconductor device with thermally conductive dielectric barrier
US3686748A (en) * 1970-04-13 1972-08-29 William E Engeler Method and apparatus for providng thermal contact and electrical isolation of integrated circuits
EP0015053A1 (en) * 1979-01-27 1980-09-03 LUCAS INDUSTRIES public limited company A method of manufacturing a semi-conductor power device assembly and an assembly thereby produced
EP0040552A1 (en) * 1980-05-20 1981-11-25 De Beers Industrial Diamond Division (Proprietary) Limited Heat sinks
EP0153618A2 (en) * 1984-02-24 1985-09-04 Kabushiki Kaisha Toshiba Method for preparing highly heat-conductive substrate and copper wiring sheet usable in the same
EP0153737A2 (en) * 1984-02-27 1985-09-04 Kabushiki Kaisha Toshiba Circuit substrate having high thermal conductivity
EP0201170A1 (en) * 1985-04-12 1986-11-12 Raymonde Gene Clifford Artus Heat sink
EP0253295A1 (en) * 1986-07-09 1988-01-20 Tektronix, Inc. Thermally enhanced LSI integrated circuit package
EP0286690A1 (en) * 1986-08-13 1988-10-19 Hitachi Metals, Ltd. Aluminum nitride and semiconductor substrate formed therefrom
GB2214719A (en) * 1988-01-26 1989-09-06 Gen Electric Co Plc Housing for electronic devices

Also Published As

Publication number Publication date
FR2636777B1 (en) 1994-02-11
DE3927866A1 (en) 1990-03-08
FR2636777A1 (en) 1990-03-23
GB8918867D0 (en) 1989-09-27
GB2222721A (en) 1990-03-14

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20040818