JPS56101777A - Mos type semiconductor device - Google Patents
Mos type semiconductor deviceInfo
- Publication number
- JPS56101777A JPS56101777A JP366780A JP366780A JPS56101777A JP S56101777 A JPS56101777 A JP S56101777A JP 366780 A JP366780 A JP 366780A JP 366780 A JP366780 A JP 366780A JP S56101777 A JPS56101777 A JP S56101777A
- Authority
- JP
- Japan
- Prior art keywords
- ionized
- mos type
- vapor
- film
- beryllium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 abstract 4
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 2
- 229910052790 beryllium Inorganic materials 0.000 abstract 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052760 oxygen Inorganic materials 0.000 abstract 2
- 239000001301 oxygen Substances 0.000 abstract 2
- 239000013078 crystal Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE: To increase thermal conductivity and electrical insulating property by using beryllium oxide for a gate insulating film and also increase stability by reducing lattice defects in the insulating film.
CONSTITUTION: Vapor 23a of metallic beryllium is generated from a crucible 21 filled with metallic beryllium by operating a heating device 24. This vapor flow enters an ionization chamber 26 and is ionized. On the other hand, oxygen that passed through an oxygen supply pipe 35 and jetted from a nozzle 36 is also ionized forming vapor of ionized beryllium oxide which collides with a MOS type semiconductor substrate 11 and is deposited on it, forming a BeO film 41. By so doing, high thermal conductivity and high electrical insulating property can be obtained with the BeO film of good crystal properties, and the application range of MOS type transistors can be expanded.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP366780A JPS56101777A (en) | 1980-01-18 | 1980-01-18 | Mos type semiconductor device |
DE19813100670 DE3100670C2 (en) | 1980-01-18 | 1981-01-12 | Metal oxide semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP366780A JPS56101777A (en) | 1980-01-18 | 1980-01-18 | Mos type semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP31333486A Division JPS62247571A (en) | 1986-12-29 | 1986-12-29 | Manufacture of mos type semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS56101777A true JPS56101777A (en) | 1981-08-14 |
JPS6226594B2 JPS6226594B2 (en) | 1987-06-09 |
Family
ID=11563780
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP366780A Granted JPS56101777A (en) | 1980-01-18 | 1980-01-18 | Mos type semiconductor device |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS56101777A (en) |
DE (1) | DE3100670C2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2222721B (en) * | 1988-08-23 | 1993-07-28 | Nobuo Mikoshiba | Cooling semiconductor devices |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1812455C3 (en) * | 1968-12-03 | 1980-03-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Process for producing an insulating protective layer consisting of a metal oxide on the surface of a semiconductor crystal |
-
1980
- 1980-01-18 JP JP366780A patent/JPS56101777A/en active Granted
-
1981
- 1981-01-12 DE DE19813100670 patent/DE3100670C2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE3100670C2 (en) | 1987-02-26 |
DE3100670A1 (en) | 1981-11-19 |
JPS6226594B2 (en) | 1987-06-09 |
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