KR860005438A - 반도체칩과 기판과의 접합구조가 개선된 반도체장치 - Google Patents

반도체칩과 기판과의 접합구조가 개선된 반도체장치

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Publication number
KR860005438A
KR860005438A KR1019850009521A KR850009521A KR860005438A KR 860005438 A KR860005438 A KR 860005438A KR 1019850009521 A KR1019850009521 A KR 1019850009521A KR 850009521 A KR850009521 A KR 850009521A KR 860005438 A KR860005438 A KR 860005438A
Authority
KR
South Korea
Prior art keywords
substrate
bonding structure
improved bonding
semiconductor device
semiconductor chip
Prior art date
Application number
KR1019850009521A
Other languages
English (en)
Other versions
KR900008971B1 (ko
Inventor
모모꼬 다께무라
미찌히꼬 이나바
도시오 데쯔야
미쯔오 고바야시
Original Assignee
가부시끼가이샤 도오시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP59276077A external-priority patent/JPS61156824A/ja
Priority claimed from JP59276075A external-priority patent/JPS61156823A/ja
Priority claimed from JP59276104A external-priority patent/JPS61156825A/ja
Application filed by 가부시끼가이샤 도오시바 filed Critical 가부시끼가이샤 도오시바
Publication of KR860005438A publication Critical patent/KR860005438A/ko
Application granted granted Critical
Publication of KR900008971B1 publication Critical patent/KR900008971B1/ko

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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01058—Cerium [Ce]
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/01—Chemical elements
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H01L2924/01—Chemical elements
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
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    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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    • H01L2924/014—Solder alloys
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Die Bonding (AREA)
KR1019850009521A 1984-12-28 1985-12-18 반도체칩과 기판과의 접합구조가 개선된 반도체장치 KR900008971B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP59-276075 1984-12-28
JP59-276104 1984-12-28
JP59276077A JPS61156824A (ja) 1984-12-28 1984-12-28 半導体装置
JP59276075A JPS61156823A (ja) 1984-12-28 1984-12-28 半導体装置
JP59-276077 1984-12-28
JP59276104A JPS61156825A (ja) 1984-12-28 1984-12-28 半導体装置

Publications (2)

Publication Number Publication Date
KR860005438A true KR860005438A (ko) 1986-07-23
KR900008971B1 KR900008971B1 (ko) 1990-12-15

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US (1) US4954870A (ko)
EP (1) EP0186411B1 (ko)
KR (1) KR900008971B1 (ko)
CN (1) CN85109419B (ko)
DE (1) DE3581905D1 (ko)

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US4954870A (en) * 1984-12-28 1990-09-04 Kabushiki Kaisha Toshiba Semiconductor device
JPH0555575A (ja) * 1991-08-29 1993-03-05 Sharp Corp 半導体装置
JP2796919B2 (ja) * 1992-05-11 1998-09-10 インターナショナル・ビジネス・マシーンズ・コーポレーション メタライゼーション複合体および半導体デバイス
US5234153A (en) * 1992-08-28 1993-08-10 At&T Bell Laboratories Permanent metallic bonding method
US5454929A (en) * 1994-06-16 1995-10-03 National Semiconductor Corporation Process for preparing solderable integrated circuit lead frames by plating with tin and palladium
US5503286A (en) * 1994-06-28 1996-04-02 International Business Machines Corporation Electroplated solder terminal
WO1996026808A1 (de) * 1995-03-01 1996-09-06 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Untermetallisierung für lotmaterialien
DE19527209A1 (de) * 1995-07-27 1997-01-30 Philips Patentverwaltung Halbleitervorrichtung
DE19639438A1 (de) * 1996-09-25 1998-04-02 Siemens Ag Halbleiterkörper mit Lotmaterialschicht
JP3311282B2 (ja) * 1997-10-13 2002-08-05 株式会社東芝 金属部材の接合方法及び接合体
EP1404883B1 (en) * 2001-05-24 2014-07-16 Fry's Metals, Inc. Thermal interface material and heat sink configuration
KR101022583B1 (ko) * 2001-05-24 2011-03-16 프라이즈 메탈즈, 인크. 방열재 및 땜납 프리폼
JP4882229B2 (ja) * 2004-09-08 2012-02-22 株式会社デンソー 半導体装置およびその製造方法
JP2006100739A (ja) * 2004-09-30 2006-04-13 Toshiba Corp 接合体、半導体装置、接合方法及び半導体装置の製造方法
DE102005061263B4 (de) * 2005-12-20 2007-10-11 Infineon Technologies Austria Ag Halbleiterwafersubstrat für Leistungshalbleiterbauelemente sowie Verfahren zur Herstellung desselben
US8502257B2 (en) 2009-11-05 2013-08-06 Visera Technologies Company Limited Light-emitting diode package
KR101067190B1 (ko) * 2010-02-03 2011-09-22 삼성전기주식회사 파워 패키지 모듈 및 그 제조방법
JP2015056646A (ja) * 2013-09-13 2015-03-23 株式会社東芝 半導体装置及び半導体モジュール
CN109704269A (zh) * 2017-10-25 2019-05-03 中芯国际集成电路制造(上海)有限公司 一种mems器件及制备方法、电子装置
CN110238504B (zh) * 2019-07-04 2021-06-08 中国航空制造技术研究院 一种钛-钢合金高强度扩散连接方法

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CA859342A (en) * 1970-12-22 Csakvary Tibor Hard solder electrical device
DE1639366B2 (de) * 1968-01-26 1975-10-02 Konstantin Andrejewitsch Preobraschenzey Verfahren zur Herstellung eines Kontaktes für Halbleiterbauelemente
BE763522A (fr) * 1970-03-03 1971-07-16 Licentia Gmbh Serie de couches de contact pour des elements de construction semi-conducteurs
US3679492A (en) * 1970-03-23 1972-07-25 Ibm Process for making mosfet's
DE2514922C2 (de) * 1975-04-05 1983-01-27 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Gegen thermische Wechselbelastung beständiges Halbleiterbauelement
JPS5575226A (en) * 1978-12-04 1980-06-06 Toshiba Corp Manufacturing semiconductor device
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JPS586143A (ja) * 1981-07-02 1983-01-13 Matsushita Electronics Corp 半導体装置
DE3312713A1 (de) * 1983-04-08 1984-10-11 The Furukawa Electric Co., Ltd., Tokio/Tokyo Silberbeschichtete elektrische materialien und verfahren zu ihrer herstellung
JPS59193036A (ja) * 1983-04-16 1984-11-01 Toshiba Corp 半導体装置の製造方法
US4954870A (en) * 1984-12-28 1990-09-04 Kabushiki Kaisha Toshiba Semiconductor device
JPH05432A (ja) * 1991-06-24 1993-01-08 Seiko Instr Inc 射出成形用金型

Also Published As

Publication number Publication date
US4954870A (en) 1990-09-04
EP0186411B1 (en) 1991-02-27
EP0186411A2 (en) 1986-07-02
KR900008971B1 (ko) 1990-12-15
EP0186411A3 (en) 1987-04-01
DE3581905D1 (de) 1991-04-04
CN85109419B (zh) 1988-06-08
CN85109419A (zh) 1986-06-10

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