DE3787968D1 - Aluminiumnitridsinter und halbleitersubstrat, das daraus hergestellt ist. - Google Patents

Aluminiumnitridsinter und halbleitersubstrat, das daraus hergestellt ist.

Info

Publication number
DE3787968D1
DE3787968D1 DE88901733T DE3787968T DE3787968D1 DE 3787968 D1 DE3787968 D1 DE 3787968D1 DE 88901733 T DE88901733 T DE 88901733T DE 3787968 T DE3787968 T DE 3787968T DE 3787968 D1 DE3787968 D1 DE 3787968D1
Authority
DE
Germany
Prior art keywords
semiconductor substrate
aluminum nitride
substrate made
nitride sinter
sinter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88901733T
Other languages
English (en)
Other versions
DE3787968T2 (de
Inventor
Yusuke Iyori
Hideko Fukushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proterial Ltd
Original Assignee
Hitachi Metals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Publication of DE3787968D1 publication Critical patent/DE3787968D1/de
Application granted granted Critical
Publication of DE3787968T2 publication Critical patent/DE3787968T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5031—Alumina
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5127—Cu, e.g. Cu-CuO eutectic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
    • C04B41/5144—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal with a composition mainly composed of one or more of the metals of the iron group
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
    • H01L21/4807—Ceramic parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Products (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Laminated Bodies (AREA)
DE88901733T 1986-08-13 1987-08-13 Aluminiumnitridsinter und halbleitersubstrat, das daraus hergestellt ist. Expired - Fee Related DE3787968T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP18977286 1986-08-13
JP22083886 1986-09-20
JP17779187 1987-07-16

Publications (2)

Publication Number Publication Date
DE3787968D1 true DE3787968D1 (de) 1993-12-02
DE3787968T2 DE3787968T2 (de) 1994-02-17

Family

ID=27324478

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88901733T Expired - Fee Related DE3787968T2 (de) 1986-08-13 1987-08-13 Aluminiumnitridsinter und halbleitersubstrat, das daraus hergestellt ist.

Country Status (5)

Country Link
US (1) US5077244A (de)
EP (1) EP0286690B1 (de)
KR (1) KR940000729B1 (de)
DE (1) DE3787968T2 (de)
WO (1) WO1988001259A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01203270A (ja) * 1988-02-08 1989-08-16 Sumitomo Electric Ind Ltd 高熱伝導性窒化アルミニウム焼結体及びその製造法
GB2222721B (en) * 1988-08-23 1993-07-28 Nobuo Mikoshiba Cooling semiconductor devices
FR2644665B1 (fr) * 1989-03-16 1996-05-03 Air Liquide Procede d'elaboration de moyens de connexions electriques, en particulier de substrats d'interconnexion pour circuits hybrides
US5830570A (en) * 1989-12-19 1998-11-03 Kyocera Corporation Aluminum nitride substrate and process for preparation thereof
US5455322A (en) * 1992-06-12 1995-10-03 Lanxide Technology Company, Lp Aluminum nitride from inorganic polymers
JPH06206772A (ja) * 1992-11-18 1994-07-26 Toshiba Corp 窒化アルミニウム焼結体およびセラミック回路基板
JPH07109573A (ja) * 1993-10-12 1995-04-25 Semiconductor Energy Lab Co Ltd ガラス基板および加熱処理方法
DE69610673T2 (de) * 1995-08-03 2001-05-10 Ngk Insulators, Ltd. Gesinterte Aluminiumnitridkörper und ihr Herstellungsverfahren
US5705450A (en) * 1996-12-17 1998-01-06 The Dow Chemical Company A1N sintered body containing a rare earth aluminum oxynitride and method to produce said body
JPH10275752A (ja) * 1997-03-28 1998-10-13 Ube Ind Ltd 張合わせウエハ−及びその製造方法、基板
US6316116B1 (en) * 1999-04-30 2001-11-13 Kabushiki Kaisha Toshiba Ceramic circuit board and method of manufacturing the same
JP4761617B2 (ja) * 2000-12-07 2011-08-31 株式会社東芝 窒化アルミニウム焼結体およびその製造方法、並びにそれを用いた電子用部品
CN101272997A (zh) * 2005-09-26 2008-09-24 株式会社德山 发光元件搭载用陶瓷烧结体
US7626448B2 (en) 2005-09-28 2009-12-01 Hynix Semiconductor, Inc. Internal voltage generator
JP5844299B2 (ja) * 2013-03-25 2016-01-13 株式会社日立製作所 接合材、接合構造体
CN113185303A (zh) * 2021-05-12 2021-07-30 深圳市丁鼎陶瓷科技有限公司 一种包覆氮化铝粉体的制备方法及制得的氮化铝陶瓷基板

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1366092A (en) * 1971-07-23 1974-09-11 Borax Cons Ltd Inhibiting grain-growth in refractory materials
JPS56149378A (en) * 1980-04-21 1981-11-19 Toyota Motor Co Ltd Manufacture of silicon nitride sintered body
DE3333406A1 (de) * 1982-09-17 1984-03-22 Tokuyama Soda K.K., Tokuyama, Yamaguchi Feines aluminiumnitridpulver, verfahren zu seiner herstellung und es enthaltendes mittel
DE3248103C1 (de) * 1982-12-24 1987-11-12 W.C. Heraeus Gmbh, 6450 Hanau Tiegel zum Ziehen von Einkristallen
JPS59164684A (ja) * 1983-03-10 1984-09-17 日立化成工業株式会社 非酸化物系セラミツク配線板の製造方法
JPS60127267A (ja) * 1983-12-12 1985-07-06 株式会社東芝 高熱伝導性窒化アルミニウム焼結体の製造方法
JPS60171270A (ja) * 1984-02-13 1985-09-04 株式会社トクヤマ 透光性を有する窒化アルミニウム焼結体製造用原料組成物
US4659611A (en) * 1984-02-27 1987-04-21 Kabushiki Kaisha Toshiba Circuit substrate having high thermal conductivity
CH660176A5 (de) * 1984-07-06 1987-03-31 Bbc Brown Boveri & Cie Metall-keramik-verbundelement und verfahren zu dessen herstellung.
US4578364A (en) * 1984-12-07 1986-03-25 General Electric Company High thermal conductivity ceramic body of aluminum nitride
JPH0627034B2 (ja) * 1985-07-18 1994-04-13 住友電気工業株式会社 窒化アルミニウム焼結体の製造方法

Also Published As

Publication number Publication date
EP0286690B1 (de) 1993-10-27
KR940000729B1 (ko) 1994-01-28
US5077244A (en) 1991-12-31
WO1988001259A1 (fr) 1988-02-25
EP0286690A1 (de) 1988-10-19
EP0286690A4 (de) 1990-03-12
DE3787968T2 (de) 1994-02-17
KR880701692A (ko) 1988-11-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee