SE9804135L - Fotokonduktiv omkopplare - Google Patents

Fotokonduktiv omkopplare

Info

Publication number
SE9804135L
SE9804135L SE9804135A SE9804135A SE9804135L SE 9804135 L SE9804135 L SE 9804135L SE 9804135 A SE9804135 A SE 9804135A SE 9804135 A SE9804135 A SE 9804135A SE 9804135 L SE9804135 L SE 9804135L
Authority
SE
Sweden
Prior art keywords
layer
contact layers
apertures
switch
applying
Prior art date
Application number
SE9804135A
Other languages
Unknown language ( )
English (en)
Other versions
SE9804135D0 (sv
Inventor
Hans Bernhoff
Jan Isberg
Original Assignee
Abb Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Ab filed Critical Abb Ab
Priority to SE9804135A priority Critical patent/SE9804135L/sv
Publication of SE9804135D0 publication Critical patent/SE9804135D0/sv
Priority to US09/233,148 priority patent/US6194699B1/en
Priority to EP19990973170 priority patent/EP1138087A1/en
Priority to AU14289/00A priority patent/AU1428900A/en
Priority to PCT/SE1999/001899 priority patent/WO2000033387A1/en
Priority to JP2000585939A priority patent/JP4519321B2/ja
Publication of SE9804135L publication Critical patent/SE9804135L/sv
Priority to NO20012550A priority patent/NO20012550D0/no

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0312—Inorganic materials including, apart from doping materials or other impurities, only AIVBIV compounds, e.g. SiC

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Electrostatic Charge, Transfer And Separation In Electrography (AREA)
SE9804135A 1998-11-30 1998-11-30 Fotokonduktiv omkopplare SE9804135L (sv)

Priority Applications (7)

Application Number Priority Date Filing Date Title
SE9804135A SE9804135L (sv) 1998-11-30 1998-11-30 Fotokonduktiv omkopplare
US09/233,148 US6194699B1 (en) 1998-11-30 1999-01-19 Photoconductive switch with multiple layers
EP19990973170 EP1138087A1 (en) 1998-11-30 1999-10-22 A photoconductive switch
AU14289/00A AU1428900A (en) 1998-11-30 1999-10-22 A photoconductive switch
PCT/SE1999/001899 WO2000033387A1 (en) 1998-11-30 1999-10-22 A photoconductive switch
JP2000585939A JP4519321B2 (ja) 1998-11-30 1999-10-22 光導電スイッチ
NO20012550A NO20012550D0 (no) 1998-11-30 2001-05-23 En fotokonduktiv svitsj

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE9804135A SE9804135L (sv) 1998-11-30 1998-11-30 Fotokonduktiv omkopplare
US09/233,148 US6194699B1 (en) 1998-11-30 1999-01-19 Photoconductive switch with multiple layers

Publications (2)

Publication Number Publication Date
SE9804135D0 SE9804135D0 (sv) 1998-11-30
SE9804135L true SE9804135L (sv) 2000-05-31

Family

ID=26663445

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9804135A SE9804135L (sv) 1998-11-30 1998-11-30 Fotokonduktiv omkopplare

Country Status (4)

Country Link
US (1) US6194699B1 (sv)
AU (1) AU1428900A (sv)
SE (1) SE9804135L (sv)
WO (1) WO2000033387A1 (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9240506B2 (en) * 2009-12-08 2016-01-19 Lawrence Livermore National Security, Llc Transparent ceramic photo-optical semiconductor high power switches
US9455366B2 (en) 2013-03-15 2016-09-27 Lawrence Livermore National Security, Llc Sol-gel process for the manufacture of high power switches
CN104681646B (zh) * 2015-03-05 2017-04-12 西安电子科技大学 碳化硅嵌入式电极平面型光导开关及其制作方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4240088A (en) 1979-08-08 1980-12-16 Semicon, Inc. Semiconductor high-voltage switch
US4779126A (en) 1983-11-25 1988-10-18 International Rectifier Corporation Optically triggered lateral thyristor with auxiliary region
GB2151843A (en) 1983-12-20 1985-07-24 Philips Electronic Associated Semiconductor devices
US4760483A (en) 1986-10-01 1988-07-26 The B.F. Goodrich Company Method for arc suppression in relay contacts
US4825061A (en) 1987-08-07 1989-04-25 Center For Innovative Technology Optically controlled bulk semiconductor switch not requiring radiation to sustain conduction
US4782222A (en) 1987-09-03 1988-11-01 Power Spectra Bulk avalanche semiconductor switch using partial light penetration and inducing field compression
US5002034A (en) 1987-09-18 1991-03-26 Robert Bosch Gmbh High-voltage switch
NO168009C (no) 1988-09-19 1994-06-21 Sverre Lillemo Elektrisk koplingsanordning.
EP0420188A1 (en) 1989-09-27 1991-04-03 Sumitomo Electric Industries, Ltd. Semiconductor heterojunction structure
JP2775903B2 (ja) 1989-10-04 1998-07-16 住友電気工業株式会社 ダイヤモンド半導体素子
US5173761A (en) 1991-01-28 1992-12-22 Kobe Steel Usa Inc., Electronic Materials Center Semiconducting polycrystalline diamond electronic devices employing an insulating diamond layer
JP3135338B2 (ja) 1992-02-21 2001-02-13 株式会社日立製作所 転流式直流遮断器
CA2092215A1 (en) 1992-03-24 1993-09-25 Shinichi Shikata Semiconductor device
US5294814A (en) 1992-06-09 1994-03-15 Kobe Steel Usa Vertical diamond field effect transistor
US5442199A (en) 1993-05-14 1995-08-15 Kobe Steel Usa, Inc. Diamond hetero-junction rectifying element
US5689395A (en) 1995-09-14 1997-11-18 Raychem Corporation Overcurrent protection circuit
US5804815A (en) * 1996-07-05 1998-09-08 Sandia Corporation GaAs photoconductive semiconductor switch

Also Published As

Publication number Publication date
US6194699B1 (en) 2001-02-27
WO2000033387A1 (en) 2000-06-08
AU1428900A (en) 2000-06-19
SE9804135D0 (sv) 1998-11-30

Similar Documents

Publication Publication Date Title
EP1063708A3 (en) Photo-conductive switch having an improved semiconductor structure
ATE112399T1 (de) Elektrochrome verglasung.
TW342572B (en) Electroluminescent lamp designs
AUPP922399A0 (en) A method and apparatus (ij46p2)
ATE176369T1 (de) Heizelement
ES8101295A1 (es) Un dispositivo para registrar opticamente informacion
KR970004102A (ko) 집적화 박막 태양전지와 그 제조방법
TW342545B (en) Semiconductor laser element and method for designing same
CA2006680A1 (en) Self electrooptic effect device employing asymmetric quantum wells
GB2013401A (en) Backlighting flexible switch
EP0240791A3 (en) Capacitance switching device for keyboard
SE9804135D0 (sv) A photoconductive switch
TW357122B (en) Face glowing element and the self-scanning glowing device
TW331043B (en) Piezoelectric actuator device
TW370627B (en) Anti-reflection film
AU7626500A (en) Patterned release film between two laminated surfaces
NO20012550L (no) En fotokonduktiv svitsj
JPS6461072A (en) Light modulator
KR930024241A (ko) 반도체 레이저장치 및 이의 제조방법
SE9804563D0 (sv) A switch
SE9804562D0 (sv) A switch
KR970704582A (ko) 서멀헤드에 있어서의 공통전극 패턴에 대한 보조전극층의 형성방법
JPS56110288A (en) Semiconductor laser element
JPS5745288A (en) Thin film photo diode
SE9503879D0 (sv) Lysdiod med uppdelat ljusemitterande område

Legal Events

Date Code Title Description
NAV Patent application has lapsed

Ref document number: 9804135-3