JPS6461072A - Light modulator - Google Patents

Light modulator

Info

Publication number
JPS6461072A
JPS6461072A JP21943887A JP21943887A JPS6461072A JP S6461072 A JPS6461072 A JP S6461072A JP 21943887 A JP21943887 A JP 21943887A JP 21943887 A JP21943887 A JP 21943887A JP S6461072 A JPS6461072 A JP S6461072A
Authority
JP
Japan
Prior art keywords
semiconductor layer
wave guide
electric field
small
condition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21943887A
Other languages
Japanese (ja)
Inventor
Akihisa Tomita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP21943887A priority Critical patent/JPS6461072A/en
Publication of JPS6461072A publication Critical patent/JPS6461072A/en
Pending legal-status Critical Current

Links

Landscapes

  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To lessen the loss in an ON condition even if the length of wave guide is enlarged and increase the ON/OFF ratio by applying a multiple quantum well structure, whose absorption is small when an electric field is not applied, to a wave guide layer. CONSTITUTION:A wave guide layer 13 is a multiple quantum well structure which alternately laminates a first semiconductor layer 131 having a first conductivity type, a second semiconductor layer 132 of intrinsic semiconductors, a third semiconductor layer 133 having a conductivity type different from the semiconductor layer 131, and a fourth semiconductor layer 134 of intrinsic semiconductors having the different thickness from the semiconductor layer 132. When a electric field is not applied, wave functions 23, 24 of electrons and holes are not nearly overlapped, oscillator strength of excitons is also small and the loss in the ON condition is small. When the electric field is applied, the functions 23, 24 are exuded in respective neighbor layers, their overlaps are large and transmittance of light is quickly reduced by the increase of absorption by the wave guide layer 13 to be an OFF condition. Therefore, the ON/OFF ratio is large.
JP21943887A 1987-09-01 1987-09-01 Light modulator Pending JPS6461072A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21943887A JPS6461072A (en) 1987-09-01 1987-09-01 Light modulator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21943887A JPS6461072A (en) 1987-09-01 1987-09-01 Light modulator

Publications (1)

Publication Number Publication Date
JPS6461072A true JPS6461072A (en) 1989-03-08

Family

ID=16735406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21943887A Pending JPS6461072A (en) 1987-09-01 1987-09-01 Light modulator

Country Status (1)

Country Link
JP (1) JPS6461072A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06292765A (en) * 1992-04-25 1994-10-21 Sayama Seimitsu Kogyo Kk Premium ball box and premium ball counter
JPH071985U (en) * 1993-06-18 1995-01-13 聖治 伊原 Pachinko ball container
CN102169243A (en) * 2011-04-28 2011-08-31 中国科学院半导体研究所 Submicron waveguide type Ge quantum well electro-optic modulator

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06292765A (en) * 1992-04-25 1994-10-21 Sayama Seimitsu Kogyo Kk Premium ball box and premium ball counter
JPH071985U (en) * 1993-06-18 1995-01-13 聖治 伊原 Pachinko ball container
CN102169243A (en) * 2011-04-28 2011-08-31 中国科学院半导体研究所 Submicron waveguide type Ge quantum well electro-optic modulator

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