CN111640817A - 一种悬空横向双异质结光探测器及其制作方法 - Google Patents
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Abstract
本发明提供一种悬空横向双异质结光探测器及其制作方法,该悬空横向双异质结光探测器包括:绝缘基底、支撑结构、第一电极、第二电极和由二维材料制成的二维结构;其中,支撑结构设置在绝缘基底上,第一电极和第二电极设置在支撑结构上;二维结构附着于支撑结构材料之上,按照二维结构与支撑结构的接触情况,分为第一接触区、第二接触区和悬空区;其中,在第一接触区和第二接触区处形成异质结。本发明利用悬空横向双异质结对光的吸收与光电转换特性进行光探测应用,制作方法简单易行,无需在二维材料表面上制作电极;一方面降低了高精度光刻的对准难度和制作成本;另一方面也避免了电极工艺对二维材料表面的污染和损伤,恶化器件的电学接触性能。
Description
技术领域
本发明涉及半导体异质结构与光探测技术领域,特别是指一种悬空横向双异质结光探测器及其制作方法。
背景技术
光探测器是利用半导体对光的吸收所引起的光电导、光生伏特和光热效应而制成的探测器,在军事和国民经济的各个领域有广泛用途。按照工作波段的不同,光探测器可分为紫外、可见、红外光探测器。在紫外波段,主要应用在导弹追踪、非视距保密光通信、海上破雾引航、高压电晕监测、火灾预警、生化检测、生物医学等军民两用领域,需在高温、宇航及军事等极端条件下工作;在可见光或近红外波段主要用于射线测量和探测、工业自动控制、光度计量等;在红外波段主要用于导弹制导、红外热成像、红外遥感等方面。
半导体光电探测器由于体积小,重量轻,响应速度快,灵敏度高,易于与其它半导体器件集成,是一种最理想光探测器,可广泛用于光通信、信号处理、传感系统和测量系统。从第一代Si基材料、第二代III-V族化合物半导体(GaAs、InP等)到第三代宽禁带半导体材料(以GaN、SiC为代表),半导体材料经历了快速发展,相应地,半导体光电探测器的光谱响应范围也从红外、可见、紫外、深紫外波段逐渐拓展和完善。
近年来,信息功能材料也已由三维(3D)体材料发展到薄层、超薄层甚至二维(2D)单原子层材料。新兴的二维材料为光探测应用提供了崭新的支撑与补充。作为二维材料的典型代表,石墨烯(Graphene)的透光率极高,单层石墨烯的吸收效率只有2.3%,光吸收容易饱和,但是其吸收光的波长范围很广,可以覆盖可见和红外光。其次,二维过渡金属硫族化合物(TMDCs)家族材料丰富,禁带宽度可调节,其中MoS2作为一种超薄的二维半导体,有着较高载流子迁移率(~410cm2V-1s-1)和随着层厚可调控的光学带隙(单层1.8eV),是一种制备可见光乃至近红外光电探测器的理想材料;PtSe2因其可调带隙从单层PtSe2(1.2eV)过渡到零带隙的块体PtSe2,其响应波段为近红外波段到中红外波段。另外,二维黑磷同样具有带隙可调控特性(0.3eV-2.0eV),高载流子迁移率(103cm2V-1s-1)、高电流开关比(104-105)以及各向异性等特点使其成为光电探测器的重要候选材料。总体来看,基于二维材料的光电探测器已展现出宽波段响应且高灵敏度的优势,其工作波段主要集中在可见、近红外到远红外区间。
由于超高速光通信、信号处理、测量和传感系统的需要,需要超高速高灵敏度的半导体光电探测器,下一代光电探测器正朝着室温、多波段、高集成化、高性能、低功耗、低成本的方向发展。而新兴二维半导体材料与传统先进半导体材料的集成设计与异质构建将为未来光探测技术发展和应用提供新的机遇。
目前,现有光探测器是在二维材料表面上制作电极,制作成本较高,工艺复杂,且电极工艺会对二维材料表面造成污染和损伤,恶化器件电学接触性能。
发明内容
本发明要解决的技术问题是提供一种悬空横向双异质结光探测器及其制作方法,一方面旨在解决现有分立3D和2D材料光探测器的性能互补,另一方面,本发明中悬空横向结构能消除基底作用影响,避免二维材料的表面损伤和污染,可获得高性能自支撑二维材料,同时简化了制作方法,降低制作成本。
为解决上述技术问题,本发明提供如下技术方案:
一种悬空横向双异质结光探测器,其包括:绝缘基底、支撑结构、第一电极、第二电极以及由二维材料制成的二维结构;其中,
所述支撑结构设置在所述绝缘基底上,所述第一电极和所述第二电极设置在所述支撑结构上;所述二维结构附着于所述支撑结构之上,按照所述二维结构与所述支撑结构之间的接触情况,所述二维结构分为第一接触区、第二接触区以及悬空区;其中,在所述第一接触区和所述第二接触区处分别形成异质结。
进一步地,所述绝缘基底的材质为蓝宝石、碳化硅、氮化铝、氮化镓、磷化铟、砷化镓、氧化硅、硅或者金刚石中的任意一种。
进一步地,所述支撑结构的材质为GaN基、GaP基、GaAs基二元、三元、四元或多元材料,或者ZnO基、ZnS基、ZnSe基二元、三元、四元或多元材料,或者CdS基、CdSe基、CdTe基二元、三元、四元或多元材料中的任意一种;所述支撑结构的掺杂类型为n型掺杂或p型掺杂,且其为具有微纳结构的非平层材料。
进一步地,所述二维材料为过渡金属硫族化合物、黑磷、石墨烯、第IV族单质二维材料、第V族单质二维材料、第III-V族二维材料、第III-VI族二维材料或第IV-VI族二维材料中的任意一种。
进一步地,所述第一接触区和所述第二接触区形成的异质结为nn和pp同型异质结或者np和pn反型异质结。
进一步地,所述第一电极和第二电极为钛、铝、镍、金、银、铬、铂、钯中的任意一种或多种的组合形成的金属电极,或者所述第一电极和第二电极为ITO或石墨烯透明导电电极;所述第一电极和所述第二电极与支撑结构之间为电学欧姆接触。
相应地,为解决上述技术问题,本发明还提供如下技术方案:
一种上述的悬空横向双异质结光探测器的制作方法,其包括:
步骤一、在绝缘基底上制备单层完整薄膜;
步骤二、在所述单层完整薄膜的上表面制作微纳结构图形;
步骤三、根据所述微纳结构图形对单层完整薄膜进行刻蚀,得到支撑结构;
步骤四、在所述支撑结构上制作电极图形,并沉积第一电极和第二电极;
步骤五、在带有电极的支撑结构上制作二维结构。
进一步地,所述单层完整薄膜采用金属有机化学气相沉积、分子束外延、化学气相沉积、原子层沉积、磁控溅射方法生长或者沉积得到。
进一步地,所述微纳结构图形和所述电极图形采用光学光刻、电子束直写光刻或者纳米压印图形化技术制作;所述对单层完整薄膜进行刻蚀为干法感应耦合等离子体刻蚀、干法反应离子刻蚀或者化学湿法腐蚀。
进一步地,所述二维结构采用自上而下转移到所述支撑结构上,或者采用自下而上外延生长在所述支撑结构上。
本发明的上述技术方案的有益效果如下:
1、本发明的悬空横向双异质结光探测器结构简单且可调性强,其光谱响应波长从紫外到红外连续覆盖,具有良好的半导体兼容性和系统集成性;
2、本发明的悬空横向双异质结光探测器能够消除基底对二维材料的不良影响,可以充分发挥二维材料的光电性能;
3、本发明的悬空横向双异质结光探测器具有非常小的本底暗电流,灵敏度高;
4、本发明的悬空横向双异质结光探测器制作方法简单易行,无需在二维材料表面上制作电极:一方面降低了高精度光刻的对准难度和制作成本;另一方面也避免了电极工艺对二维材料表面的污染和损伤,恶化器件电学接触性能。
附图说明
图1为本发明的第一实施例提供的悬空横向双异质结光探测器示意图;
图2为本发明的第二实施例提供的悬空横向双异质结光探测器制作方法的流程示意图;
图3为本发明的第三实施例提供的悬空横向MoS2/GaN反型双异质结光探测器示意图。
附图标记说明:
L1、绝缘基底;L2、支撑结构;L3、二维结构;P1、第一电极;
R1、第一接触区;R2、悬空区;R3、第二接触区;P2、第二电极。
具体实施方式
为使本发明要解决的技术问题、技术方案和优点更加清楚,下面将结合附图及具体实施例进行详细描述。
第一实施例
请参阅图1,本实施例提供一种悬空横向双异质结光探测器,其包括:绝缘基底L1、支撑结构L2、第一电极P1、第二电极P2以及由二维材料制成的二维结构L3;其中,支撑结构L2设置在绝缘基底L1上,第一电极P1和第二电极P2设置在支撑结构L2上;二维结构L3附着于支撑结构L2之上,按照二维结构L3与支撑结构L2的接触情况,分为第一接触区R1、第二接触区R3以及悬空区R2;其中,在第一接触区R1和第二接触区R3处分别形成异质结。
第一接触区R1和第二接触区R3分别对应于二维结构L3与其下方的支撑结构L2之间形成的异质结,悬空区R2对应于二维结构L3下方悬空无支撑结构材料,处于悬空状态。由第一电极P1、支撑结构L2、第一接触区R1、悬空区R2、第二接触区R3、支撑结构材料L2至第二电极P2构成本实施例的悬空横向双异质结光探测器,利用悬空横向双异质结对光的吸收与光电转换特性进行光探测应用,构成悬空横向双异质结光探测器。
其中,本实施例中的绝缘基底L1的材料优选为下列材料:蓝宝石(Sapphire)、碳化硅(SiC)、氮化铝(AlN)、氮化镓(GaN)、磷化铟(InP)、砷化镓(GaAs)、氧化硅(SiO2)、硅(Si)或者金刚石。
支撑结构L2的材料可以为GaN基、GaP基、GaAs基二元、三元、四元或多元材料,或者ZnO基、ZnS基、ZnSe基二元、三元、四元或多元材料,或者CdS基、CdSe基、CdTe基二元、三元、四元或多元材料。支撑结构L2的掺杂类型可以为n型掺杂或p型掺杂,且为具有微纳结构的非平层材料。
二维材料优选为过渡金属硫族化合物(TMDCs)、黑磷(BP)、石墨烯(Graphene)、第IV族单质二维材料、第V族单质二维材料、第III-V族二维材料、第III-VI族二维材料、第IV-VI族二维材料。
第一接触区R1和第二接触区R3形成的异质结优选为nn和pp同型异质结或者np和pn反型异质结。
第一电极P1和第二电极P2可以为钛、铝、镍、金、银、铬、铂、钯等金属中的任意一种或多种的组合形成的金属电极,或者ITO、石墨烯透明导电电极;第一电极P1和第二电极P2与支撑结构L2之间为电学欧姆接触。
本实施例利用悬空横向双异质结对光的吸收与光电转换特性进行光探测应用,构成悬空横向双异质结光探测器,制作方法简单易行,无需在二维材料表面上制作电极;一方面降低了高精度光刻的对准难度和制作成本;另一方面也避免了电极工艺对二维材料表面的污染和损伤,恶化器件的电学接触性能。
第二实施例
请参阅图2,本实施例提供一种上述的悬空横向双异质结光探测器的制作方法,该制作方法包括以下步骤:
S1、在绝缘基底L1上制备单层完整薄膜;
参见图1,上述步骤具体为:在绝缘基底L1上采用金属有机化学气相沉积(MOCVD)、分子束外延(MBE)、化学气相沉积(CVD)、原子层沉积(ALD)、磁控溅射(Magnetronsputtering)方法生长或者沉积得到单层完整薄膜。
S2、在单层完整薄膜的上表面制作微纳结构图形;
参见图1,上述步骤具体可以为:在上述单层完整薄膜的上表面,利用光学光刻、电子束直写光刻或者纳米压印图形化技术制作微纳结构图形。
S3、采用刻蚀单层完整薄膜,得到支撑结构L2;
参见图1,上述步骤具体为:采用干法感应耦合等离子体刻蚀(ICP)、干法反应离子刻蚀(RIE)或者化学湿法腐蚀单层完整薄膜,得到支撑结构L2。
S4、在支撑结构L2上制作电极图形,并沉积第一电极P1和第二电极P2;
参见图1,上述步骤具体可以为:在支撑结构L2上,利用光学光刻、电子束直写光刻或者纳米压印图形化技术制作电极图形,然后采用电子束蒸发或者溅射第一电极P1和第二电极P2。
S5、在带有电极的支撑结构上制作二维结构。
参见图1,上述步骤具体可以为:采用自上而下法,将二维材料转移到带有电极的支撑结构L2上,或者采用自下而上法,在支撑结构L2上外延生长二维材料,形成二维结构L3。最终,形成本发明的悬空横向双异质结光探测器。
本实施例的悬空横向双异质结光探测器制作方法,简单易行,无需在二维材料表面上制作电极;一方面降低了高精度光刻的对准难度和制作成本;另一方面也避免了电极工艺对二维材料表面的污染和损伤,恶化器件电学接触性能。
第三实施例
请参阅图3,本实施例提供一种悬空横向MoS2/GaN反型双异质结光探测器制作方法,该制作方法包括以下步骤:
(a)在c面蓝宝石基底上,采用MOCVD外延生长1μm厚p型GaN薄膜(掺杂Mg,p型掺杂浓度为1*1018/cm3);
(b)利用紫外光刻制作微纳栅条形结构,栅条长为10μm,栅条宽为2μm,相邻栅条间距为2μm;
(c)采用Cl基ICP干法刻蚀p型GaN薄膜,得到带有微纳栅条结构的p型GaN支撑结构材料;
(d)在p型GaN支撑结构材料上,利用紫外光刻制作电极图形,然后采用电子束蒸发沉积5nm镍(Ni)和50nm金(Au)金属电极,之后在500度、空气气氛下退火5分钟形成良好的欧姆接触;
(e)采用自上而下法,将单层MoS2干法转移到带有电极的p型GaN支撑结构材料上,制作出本实施例的悬空横向MoS2/GaN反型双异质结光探测器。
第四实施例
本实施例提供一种悬空横向PtSe2/GaAs同型双异质结光探测器制作方法,该制作方法包括以下步骤:
(a)在绝缘GaAs衬底上,采用MBE外延生长2μm厚n型GaAs薄膜(掺杂Te,n型掺杂浓度为3*1018/cm3);
(b)利用紫外光刻制作微纳栅条形结构,栅条长为10μm,栅条宽为2μm,相邻栅条间距为5μm;
(c)采用Cl基ICP干法刻蚀n型GaAs薄膜,得到带有微纳栅条结构的n型GaAs支撑结构材料;
(d)在n型GaAs支撑结构材料上,利用紫外光刻制作电极图形,然后采用电子束蒸发沉积40nm锗(Ge)和80nm金(Au)金属电极,之后在350度、氮气气氛下退火20秒形成良好的欧姆接触;
(e)采用自上而下机械剥离法,将少层PtSe2干法转移到带有电极的n型GaAs支撑结构材料上,制作出本实施例的悬空横向PtSe2/GaAs同型双异质结光探测器。
此外,需要说明的是,在本文中,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者终端设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者终端设备所固有的要素。在没有更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括所述要素的过程、方法、物品或者终端设备中还存在另外的相同要素。
最后需说明的是,以上所述是本发明的优选实施方式,应当指出,尽管已描述了本发明的优选实施例,但对于本领域普通技术人员来说,一旦得知了本发明的基本创造性概念,在不脱离本发明所述原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。所以,所附权利要求意欲解释为包括优选实施例以及落入本发明实施例范围的所有变更和修改。
Claims (10)
1.一种悬空横向双异质结光探测器,其特征在于,包括:绝缘基底、支撑结构、第一电极、第二电极以及由二维材料制成的二维结构;其中,
所述支撑结构设置在所述绝缘基底上,所述第一电极和所述第二电极设置在所述支撑结构上;所述二维结构附着于所述支撑结构之上,按照所述二维结构与所述支撑结构之间的接触情况,所述二维结构分为第一接触区、第二接触区以及悬空区;其中,在所述第一接触区和所述第二接触区处分别形成异质结。
2.如权利要求1所述的悬空横向双异质结光探测器,其特征在于,所述绝缘基底的材质为蓝宝石、碳化硅、氮化铝、氮化镓、磷化铟、砷化镓、氧化硅、硅或者金刚石中的任意一种。
3.如权利要求1所述的悬空横向双异质结光探测器,其特征在于,所述支撑结构的材质为GaN基、GaP基、GaAs基二元、三元、四元或多元材料,或者ZnO基、ZnS基、ZnSe基二元、三元、四元或多元材料,或者CdS基、CdSe基、CdTe基二元、三元、四元或多元材料中的任意一种;所述支撑结构的掺杂类型为n型掺杂或p型掺杂,且其为具有微纳结构的非平层材料。
4.如权利要求1所述的悬空横向双异质结光探测器,其特征在于,所述二维材料为过渡金属硫族化合物、黑磷、石墨烯、第IV族单质二维材料、第V族单质二维材料、第III-V族二维材料、第III-VI族二维材料或第IV-VI族二维材料中的任意一种。
5.如权利要求1所述的悬空横向双异质结光探测器,其特征在于,所述第一接触区和所述第二接触区形成的异质结为nn和pp同型异质结或者np和pn反型异质结。
6.如权利要求1所述的悬空横向双异质结光探测器,其特征在于,所述第一电极和第二电极为钛、铝、镍、金、银、铬、铂、钯中的任意一种或多种的组合形成的金属电极,或者所述第一电极和第二电极为ITO或石墨烯透明导电电极;所述第一电极和所述第二电极与支撑结构之间为电学欧姆接触。
7.一种如权利要求1-6任一项所述的悬空横向双异质结光探测器的制作方法,其特征在于,所述制作方法包括以下步骤:
步骤一、在绝缘基底上制备单层完整薄膜;
步骤二、在所述单层完整薄膜的上表面制作微纳结构图形;
步骤三、根据所述微纳结构图形对单层完整薄膜进行刻蚀,得到支撑结构;
步骤四、在所述支撑结构上制作电极图形,并沉积第一电极和第二电极;
步骤五、在带有电极的支撑结构上制作二维结构。
8.如权利要求7所述的悬空横向双异质结光探测器的制作方法,其特征在于,所述单层完整薄膜采用金属有机化学气相沉积、分子束外延、化学气相沉积、原子层沉积、磁控溅射方法生长或者沉积得到。
9.如权利要求7所述的悬空横向双异质结光探测器的制作方法,其特征在于,所述微纳结构图形和所述电极图形采用光学光刻、电子束直写光刻或者纳米压印图形化技术制作;所述对单层完整薄膜进行刻蚀为干法感应耦合等离子体刻蚀、干法反应离子刻蚀或者化学湿法腐蚀。
10.如权利要求7所述的悬空横向双异质结光探测器的制作方法,其特征在于,所述二维结构采用自上而下转移到所述支撑结构上,或者采用自下而上外延生长在所述支撑结构上。
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CN115616041A (zh) * | 2022-12-15 | 2023-01-17 | 太原理工大学 | 一种基于GaN基QDs薄膜的气体传感器及其制备方法 |
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