DE3580189D1 - Herstellungsverfahren einer lawinenphotodiode und so hergestellte lawinenphotodiode. - Google Patents

Herstellungsverfahren einer lawinenphotodiode und so hergestellte lawinenphotodiode.

Info

Publication number
DE3580189D1
DE3580189D1 DE8585303862T DE3580189T DE3580189D1 DE 3580189 D1 DE3580189 D1 DE 3580189D1 DE 8585303862 T DE8585303862 T DE 8585303862T DE 3580189 T DE3580189 T DE 3580189T DE 3580189 D1 DE3580189 D1 DE 3580189D1
Authority
DE
Germany
Prior art keywords
photodiod
avalanche
producing
produced
avalanche photodiod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585303862T
Other languages
English (en)
Inventor
Kazuhito Yasuda
Yutaka Kishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3580189D1 publication Critical patent/DE3580189D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/955—Melt-back

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
DE8585303862T 1984-05-31 1985-05-31 Herstellungsverfahren einer lawinenphotodiode und so hergestellte lawinenphotodiode. Expired - Fee Related DE3580189D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59109434A JPH0824199B2 (ja) 1984-05-31 1984-05-31 半導体受光素子の製造方法

Publications (1)

Publication Number Publication Date
DE3580189D1 true DE3580189D1 (de) 1990-11-29

Family

ID=14510145

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585303862T Expired - Fee Related DE3580189D1 (de) 1984-05-31 1985-05-31 Herstellungsverfahren einer lawinenphotodiode und so hergestellte lawinenphotodiode.

Country Status (6)

Country Link
US (1) US4840916A (de)
EP (1) EP0163546B1 (de)
JP (1) JPH0824199B2 (de)
KR (1) KR900000209B1 (de)
CA (1) CA1256549A (de)
DE (1) DE3580189D1 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8817886D0 (en) * 1988-07-27 1988-09-01 British Telecomm Avalanche photodiode structure
JPH02159775A (ja) * 1988-12-14 1990-06-19 Toshiba Corp 半導体受光素子及びその製造方法
JPH02202071A (ja) * 1989-01-31 1990-08-10 Toshiba Corp 半導体受光素子及びその製造方法
US5260560A (en) * 1990-03-02 1993-11-09 Canon Kabushiki Kaisha Photoelectric transfer device
EP0444963B1 (de) * 1990-03-02 1997-09-17 Canon Kabushiki Kaisha Fotoelektrische Übertragungsvorrichtung
US5596186A (en) * 1993-12-08 1997-01-21 Nikon Corporation High sensitivity silicon avalanche photodiode
JP2762939B2 (ja) * 1994-03-22 1998-06-11 日本電気株式会社 超格子アバランシェフォトダイオード
US5446308A (en) * 1994-04-04 1995-08-29 General Electric Company Deep-diffused planar avalanche photodiode
JP4010337B2 (ja) * 1995-02-02 2007-11-21 住友電気工業株式会社 ｐｉｎ型受光素子およびｐｉｎ型受光素子の製造方法
US5610416A (en) * 1995-02-16 1997-03-11 Hewlett-Packard Company Avalanche photodiode with epitaxially regrown guard rings
JPH0945954A (ja) * 1995-07-31 1997-02-14 Mitsubishi Electric Corp 半導体素子，及び半導体素子の製造方法
US5866936A (en) * 1997-04-01 1999-02-02 Hewlett-Packard Company Mesa-structure avalanche photodiode having a buried epitaxial junction
JPH10326907A (ja) * 1997-05-26 1998-12-08 Mitsubishi Electric Corp 受光素子，及びその製造方法
JP4220688B2 (ja) * 2001-02-26 2009-02-04 日本オプネクスト株式会社 アバランシェホトダイオード
US7072557B2 (en) * 2001-12-21 2006-07-04 Infinera Corporation InP-based photonic integrated circuits with Al-containing waveguide cores and InP-based array waveguide gratings (AWGs) and avalanche photodiodes (APDs) and other optical components containing an InAlGaAs waveguide core
AU2003212899A1 (en) * 2002-02-01 2003-09-02 Picometrix, Inc. Enhanced photodetector
KR20040094418A (ko) * 2002-02-01 2004-11-09 피코메트릭스 인코포레이티드 전하제어된 애벌란시 광다이오드 및 그 제조방법
EP1470575B1 (de) * 2002-02-01 2018-07-25 MACOM Technology Solutions Holdings, Inc. Lawinen-fotodiode mit mesa-struktur
JP4755854B2 (ja) * 2005-06-02 2011-08-24 富士通株式会社 半導体受光装置及びその製造方法
FR3000608B1 (fr) * 2012-12-31 2015-03-06 Commissariat Energie Atomique Structure semiconductrice du type photodiode a avalanche et procede de fabrication d'une telle structure
FR3000610B1 (fr) 2012-12-31 2015-03-06 Commissariat Energie Atomique Structure semiconductrice du type photodiode a avalanche a faible temps de reponse et procede de fabrication d'une telle photodiode
JP2018156984A (ja) * 2017-03-15 2018-10-04 株式会社東芝 光検出素子
US11769782B2 (en) * 2018-05-02 2023-09-26 Sony Semiconductor Solutions Corporation Solid-state imaging element and imaging apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5649581A (en) * 1979-09-28 1981-05-06 Nec Corp Preparation of hetero-junction light detector
JPS5671985A (en) * 1979-11-19 1981-06-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor light receiving system
JPS5681984A (en) * 1979-12-06 1981-07-04 Mitsubishi Electric Corp Semiconductor device
DE3172668D1 (en) * 1980-07-08 1985-11-21 Fujitsu Ltd Avalanche photodiodes
JPS5731183A (en) * 1980-08-01 1982-02-19 Nippon Telegr & Teleph Corp <Ntt> Compound semiconductor avalanche photodiode
JPS5793585A (en) * 1980-12-02 1982-06-10 Fujitsu Ltd Semiconductor photoreceiving element
JPS57112084A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Avalanche photodiode

Also Published As

Publication number Publication date
JPS60254675A (ja) 1985-12-16
EP0163546A3 (en) 1987-12-09
EP0163546A2 (de) 1985-12-04
JPH0824199B2 (ja) 1996-03-06
US4840916A (en) 1989-06-20
KR900000209B1 (en) 1990-01-23
CA1256549A (en) 1989-06-27
EP0163546B1 (de) 1990-10-24
KR850008558A (ko) 1985-12-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee