BR8903812A - Transitor bipolar e metodo de formacao do mesmo - Google Patents

Transitor bipolar e metodo de formacao do mesmo

Info

Publication number
BR8903812A
BR8903812A BR898903812A BR8903812A BR8903812A BR 8903812 A BR8903812 A BR 8903812A BR 898903812 A BR898903812 A BR 898903812A BR 8903812 A BR8903812 A BR 8903812A BR 8903812 A BR8903812 A BR 8903812A
Authority
BR
Brazil
Prior art keywords
same
formation method
transitor
bipolar
bipolar transitor
Prior art date
Application number
BR898903812A
Other languages
English (en)
Inventor
Shah Akbar
Patricia Lavelle Kroesen
Seiki Ogura
Nivo Rovedo
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of BR8903812A publication Critical patent/BR8903812A/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/009—Bi-MOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/011—Bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
BR898903812A 1988-08-01 1989-07-31 Transitor bipolar e metodo de formacao do mesmo BR8903812A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/226,738 US4957875A (en) 1988-08-01 1988-08-01 Vertical bipolar transistor

Publications (1)

Publication Number Publication Date
BR8903812A true BR8903812A (pt) 1990-03-20

Family

ID=22850197

Family Applications (1)

Application Number Title Priority Date Filing Date
BR898903812A BR8903812A (pt) 1988-08-01 1989-07-31 Transitor bipolar e metodo de formacao do mesmo

Country Status (9)

Country Link
US (1) US4957875A (pt)
EP (1) EP0354153B1 (pt)
JP (2) JPH0713974B2 (pt)
KR (1) KR920010595B1 (pt)
CN (1) CN1027413C (pt)
BR (1) BR8903812A (pt)
CA (1) CA1290079C (pt)
DE (1) DE68906095T2 (pt)
MY (1) MY104983A (pt)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4897703A (en) * 1988-01-29 1990-01-30 Texas Instruments Incorporated Recessed contact bipolar transistor and method
US5034337A (en) * 1989-02-10 1991-07-23 Texas Instruments Incorporated Method of making an integrated circuit that combines multi-epitaxial power transistors with logic/analog devices
US5124775A (en) * 1990-07-23 1992-06-23 National Semiconductor Corporation Semiconductor device with oxide sidewall
US5087580A (en) * 1990-09-17 1992-02-11 Texas Instruments Incorporated Self-aligned bipolar transistor structure and fabrication process
JP3343968B2 (ja) * 1992-12-14 2002-11-11 ソニー株式会社 バイポーラ型半導体装置およびその製造方法
US5371453A (en) * 1993-01-28 1994-12-06 Motorola, Inc. Battery charger system with common charge and data exchange port
US5541433A (en) * 1995-03-08 1996-07-30 Integrated Device Technology, Inc. High speed poly-emitter bipolar transistor
US6703685B2 (en) 2001-12-10 2004-03-09 Intel Corporation Super self-aligned collector device for mono-and hetero bipolar junction transistors
US7372091B2 (en) * 2004-01-27 2008-05-13 Micron Technology, Inc. Selective epitaxy vertical integrated circuit components
US7504685B2 (en) 2005-06-28 2009-03-17 Micron Technology, Inc. Oxide epitaxial isolation
US8105911B2 (en) * 2008-09-30 2012-01-31 Northrop Grumman Systems Corporation Bipolar junction transistor guard ring structures and method of fabricating thereof
SE537101C2 (sv) * 2010-03-30 2015-01-07 Fairchild Semiconductor Halvledarkomponent och förfarande för utformning av en struktur i ett målsubstrat för tillverkning av en halvledarkomponent

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4195307A (en) * 1977-07-25 1980-03-25 International Business Machines Corporation Fabricating integrated circuits incorporating high-performance bipolar transistors
JPS55163873A (en) * 1979-06-07 1980-12-20 Nec Corp Manufacture of semiconductor device
US4299024A (en) * 1980-02-25 1981-11-10 Harris Corporation Fabrication of complementary bipolar transistors and CMOS devices with poly gates
US4312680A (en) * 1980-03-31 1982-01-26 Rca Corporation Method of manufacturing submicron channel transistors
DE3205022A1 (de) * 1981-02-14 1982-09-16 Mitsubishi Denki K.K., Tokyo Verfahren zum herstellen einer integrierten halbleiterschaltung
US4475527A (en) * 1982-06-11 1984-10-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Ingot slicing machine and method
US4507847A (en) * 1982-06-22 1985-04-02 Ncr Corporation Method of making CMOS by twin-tub process integrated with a vertical bipolar transistor
JPS58225663A (ja) * 1982-06-23 1983-12-27 Toshiba Corp 半導体装置の製造方法
US4728616A (en) * 1982-09-17 1988-03-01 Cornell Research Foundation, Inc. Ballistic heterojunction bipolar transistor
US4521952A (en) * 1982-12-02 1985-06-11 International Business Machines Corporation Method of making integrated circuits using metal silicide contacts
JPS59186367A (ja) * 1983-04-06 1984-10-23 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US4637125A (en) * 1983-09-22 1987-01-20 Kabushiki Kaisha Toshiba Method for making a semiconductor integrated device including bipolar transistor and CMOS transistor
US4642878A (en) * 1984-08-28 1987-02-17 Kabushiki Kaisha Toshiba Method of making MOS device by sequentially depositing an oxidizable layer and a masking second layer over gated device regions
JPS6185864A (ja) * 1984-10-04 1986-05-01 Nec Corp バイポ−ラ型トランジスタ
US4706378A (en) * 1985-01-30 1987-11-17 Texas Instruments Incorporated Method of making vertical bipolar transistor having base above buried nitride dielectric formed by deep implantation
US4648173A (en) * 1985-05-28 1987-03-10 International Business Machines Corporation Fabrication of stud-defined integrated circuit structure
JPS61283120A (ja) * 1985-06-10 1986-12-13 Nec Corp オ−ム性電極
JPH0611058B2 (ja) * 1986-09-10 1994-02-09 日本電気株式会社 ヘテロ接合バイポーラトランジスタの製造方法
JPH0611059B2 (ja) * 1986-10-08 1994-02-09 日本電気株式会社 ヘテロ接合バイポ−ラトランジスタ及びその製造方法
JPS63102257A (ja) * 1986-10-20 1988-05-07 Fujitsu Ltd ヘテロ接合バイポ−ラ半導体装置の製造方法
US4738624A (en) * 1987-04-13 1988-04-19 International Business Machines Corporation Bipolar transistor structure with self-aligned device and isolation and fabrication process therefor

Also Published As

Publication number Publication date
JPH0713974B2 (ja) 1995-02-15
CA1290079C (en) 1991-10-01
JPH0254934A (ja) 1990-02-23
US4957875A (en) 1990-09-18
EP0354153B1 (en) 1993-04-21
DE68906095D1 (de) 1993-05-27
EP0354153A2 (en) 1990-02-07
EP0354153A3 (en) 1990-04-04
CN1040116A (zh) 1990-02-28
KR920010595B1 (ko) 1992-12-10
MY104983A (en) 1994-07-30
KR900004025A (ko) 1990-03-27
JP2597466B2 (ja) 1997-04-09
CN1027413C (zh) 1995-01-11
DE68906095T2 (de) 1993-10-28
JPH07169775A (ja) 1995-07-04

Similar Documents

Publication Publication Date Title
IT1205010B (it) Tetraidronaftalin-derivati e indan-derivati
DE68928033T2 (de) Stereosynthesizer und entsprechendes verfahren
DK317889A (da) Sproejtemetode
FI900147A0 (fi) Daempningsanordning foer stoetbelastning.
DK9892A (da) Tellur- og selenforbindelser samt fremgangsmaade til fremstilling deraf
DE68920754T2 (de) Baugerät und Bauverfahren.
DE3580189D1 (de) Herstellungsverfahren einer lawinenphotodiode und so hergestellte lawinenphotodiode.
FI943769A0 (fi) Menetelmä yhteistyön perustamisesta toiminteen kanssa
DE3582997D1 (de) Hochleistungsbefestigung und verfahren dafuer.
BR8903812A (pt) Transitor bipolar e metodo de formacao do mesmo
TR27110A (tr) Seramik ve siramik bilesik yapilar üretme yöntemi.
IT8821300A0 (it) Procedimento di preparazione di morniflumato e analoghi.
BR9007001A (pt) Metodo de propulsao de hidrofolio assimetrico e aparelho
ATE125794T1 (de) Prodrogen von antiinflammatorischen 3-acyl-2- oxindol-1-carboxamiden.
FI98549B (fi) Menetelmä pysyvämuotoisten tuotteiden valmistamiseksi
IT8920839A0 (it) Procedimento e dispositivo per la realizzazione di pannelli.
DE3678122D1 (de) Herstellungsverfahren von diisopropylcarbinol.
DE3580092D1 (de) Herstellungsverfahren von 1-bromaethylhydrocarbylcarbonaten und 1-bromaethylhydrocarbylcarbonate.
IT8847653A0 (it) Sizzante comprendente 5 - idroscomposizione farmaceutica anoressitrpofano
DE69008733T2 (de) Interesterifikation von phospholipiden.
DE68904776T2 (de) Bauglied und verfahren.
KR900004740U (ko) 일부인
DK304187D0 (da) Cephalosporinforbindelser samt fremgangsmaader til fremstilling deraf
FI883463A0 (fi) Anordning foer undervattensarbete.
TR23156A (tr) Lif-tepkin ftalosiyanin-monoazo bilesikler ve bunlarin hazirlanmalarina mahsus usul

Legal Events

Date Code Title Description
FD3 Appl. lapsed due to non-payment of renewal fee