DE68906095T2 - Vertikaler Bipolartransistor. - Google Patents

Vertikaler Bipolartransistor.

Info

Publication number
DE68906095T2
DE68906095T2 DE89480105T DE68906095T DE68906095T2 DE 68906095 T2 DE68906095 T2 DE 68906095T2 DE 89480105 T DE89480105 T DE 89480105T DE 68906095 T DE68906095 T DE 68906095T DE 68906095 T2 DE68906095 T2 DE 68906095T2
Authority
DE
Germany
Prior art keywords
bipolar transistor
vertical bipolar
vertical
transistor
bipolar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89480105T
Other languages
English (en)
Other versions
DE68906095D1 (de
Inventor
Shah Akbar
Patricia Lavelle Kroesen
Seiki Ogura
Nivo Rovedo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE68906095D1 publication Critical patent/DE68906095D1/de
Application granted granted Critical
Publication of DE68906095T2 publication Critical patent/DE68906095T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/009—Bi-MOS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/011—Bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DE89480105T 1988-08-01 1989-06-29 Vertikaler Bipolartransistor. Expired - Fee Related DE68906095T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/226,738 US4957875A (en) 1988-08-01 1988-08-01 Vertical bipolar transistor

Publications (2)

Publication Number Publication Date
DE68906095D1 DE68906095D1 (de) 1993-05-27
DE68906095T2 true DE68906095T2 (de) 1993-10-28

Family

ID=22850197

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89480105T Expired - Fee Related DE68906095T2 (de) 1988-08-01 1989-06-29 Vertikaler Bipolartransistor.

Country Status (9)

Country Link
US (1) US4957875A (de)
EP (1) EP0354153B1 (de)
JP (2) JPH0713974B2 (de)
KR (1) KR920010595B1 (de)
CN (1) CN1027413C (de)
BR (1) BR8903812A (de)
CA (1) CA1290079C (de)
DE (1) DE68906095T2 (de)
MY (1) MY104983A (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4897703A (en) * 1988-01-29 1990-01-30 Texas Instruments Incorporated Recessed contact bipolar transistor and method
US5034337A (en) * 1989-02-10 1991-07-23 Texas Instruments Incorporated Method of making an integrated circuit that combines multi-epitaxial power transistors with logic/analog devices
US5124775A (en) * 1990-07-23 1992-06-23 National Semiconductor Corporation Semiconductor device with oxide sidewall
US5087580A (en) * 1990-09-17 1992-02-11 Texas Instruments Incorporated Self-aligned bipolar transistor structure and fabrication process
JP3343968B2 (ja) * 1992-12-14 2002-11-11 ソニー株式会社 バイポーラ型半導体装置およびその製造方法
US5371453A (en) * 1993-01-28 1994-12-06 Motorola, Inc. Battery charger system with common charge and data exchange port
US5541433A (en) * 1995-03-08 1996-07-30 Integrated Device Technology, Inc. High speed poly-emitter bipolar transistor
US6703685B2 (en) 2001-12-10 2004-03-09 Intel Corporation Super self-aligned collector device for mono-and hetero bipolar junction transistors
US7372091B2 (en) * 2004-01-27 2008-05-13 Micron Technology, Inc. Selective epitaxy vertical integrated circuit components
US7504685B2 (en) 2005-06-28 2009-03-17 Micron Technology, Inc. Oxide epitaxial isolation
US8105911B2 (en) * 2008-09-30 2012-01-31 Northrop Grumman Systems Corporation Bipolar junction transistor guard ring structures and method of fabricating thereof
SE537101C2 (sv) * 2010-03-30 2015-01-07 Fairchild Semiconductor Halvledarkomponent och förfarande för utformning av en struktur i ett målsubstrat för tillverkning av en halvledarkomponent

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4195307A (en) * 1977-07-25 1980-03-25 International Business Machines Corporation Fabricating integrated circuits incorporating high-performance bipolar transistors
JPS55163873A (en) * 1979-06-07 1980-12-20 Nec Corp Manufacture of semiconductor device
US4299024A (en) * 1980-02-25 1981-11-10 Harris Corporation Fabrication of complementary bipolar transistors and CMOS devices with poly gates
US4312680A (en) * 1980-03-31 1982-01-26 Rca Corporation Method of manufacturing submicron channel transistors
DE3205022A1 (de) * 1981-02-14 1982-09-16 Mitsubishi Denki K.K., Tokyo Verfahren zum herstellen einer integrierten halbleiterschaltung
US4475527A (en) * 1982-06-11 1984-10-09 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Ingot slicing machine and method
US4507847A (en) * 1982-06-22 1985-04-02 Ncr Corporation Method of making CMOS by twin-tub process integrated with a vertical bipolar transistor
JPS58225663A (ja) * 1982-06-23 1983-12-27 Toshiba Corp 半導体装置の製造方法
US4728616A (en) * 1982-09-17 1988-03-01 Cornell Research Foundation, Inc. Ballistic heterojunction bipolar transistor
US4521952A (en) * 1982-12-02 1985-06-11 International Business Machines Corporation Method of making integrated circuits using metal silicide contacts
JPS59186367A (ja) * 1983-04-06 1984-10-23 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
US4637125A (en) * 1983-09-22 1987-01-20 Kabushiki Kaisha Toshiba Method for making a semiconductor integrated device including bipolar transistor and CMOS transistor
EP0173953B1 (de) * 1984-08-28 1991-07-17 Kabushiki Kaisha Toshiba Verfahren zum Herstellen einer Halbleiteranordnung mit Gateelektrode
JPS6185864A (ja) * 1984-10-04 1986-05-01 Nec Corp バイポ−ラ型トランジスタ
US4706378A (en) * 1985-01-30 1987-11-17 Texas Instruments Incorporated Method of making vertical bipolar transistor having base above buried nitride dielectric formed by deep implantation
US4648173A (en) * 1985-05-28 1987-03-10 International Business Machines Corporation Fabrication of stud-defined integrated circuit structure
JPS61283120A (ja) * 1985-06-10 1986-12-13 Nec Corp オ−ム性電極
JPH0611058B2 (ja) * 1986-09-10 1994-02-09 日本電気株式会社 ヘテロ接合バイポーラトランジスタの製造方法
JPH0611059B2 (ja) * 1986-10-08 1994-02-09 日本電気株式会社 ヘテロ接合バイポ−ラトランジスタ及びその製造方法
JPS63102257A (ja) * 1986-10-20 1988-05-07 Fujitsu Ltd ヘテロ接合バイポ−ラ半導体装置の製造方法
US4738624A (en) * 1987-04-13 1988-04-19 International Business Machines Corporation Bipolar transistor structure with self-aligned device and isolation and fabrication process therefor

Also Published As

Publication number Publication date
JPH07169775A (ja) 1995-07-04
CN1027413C (zh) 1995-01-11
EP0354153A3 (en) 1990-04-04
JPH0713974B2 (ja) 1995-02-15
MY104983A (en) 1994-07-30
EP0354153B1 (de) 1993-04-21
US4957875A (en) 1990-09-18
DE68906095D1 (de) 1993-05-27
BR8903812A (pt) 1990-03-20
JPH0254934A (ja) 1990-02-23
JP2597466B2 (ja) 1997-04-09
EP0354153A2 (de) 1990-02-07
KR920010595B1 (ko) 1992-12-10
KR900004025A (ko) 1990-03-27
CN1040116A (zh) 1990-02-28
CA1290079C (en) 1991-10-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee