ES8104640A1 - Perfeccionamientos en detectores de ionizacion acumulativa - Google Patents
Perfeccionamientos en detectores de ionizacion acumulativaInfo
- Publication number
- ES8104640A1 ES8104640A1 ES494006A ES494006A ES8104640A1 ES 8104640 A1 ES8104640 A1 ES 8104640A1 ES 494006 A ES494006 A ES 494006A ES 494006 A ES494006 A ES 494006A ES 8104640 A1 ES8104640 A1 ES 8104640A1
- Authority
- ES
- Spain
- Prior art keywords
- pair
- layer
- heterojunctions
- bandgap
- sequence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003321 amplification Effects 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
FOTODETECTORES DE IONIZACION ACUMULATIVA. COMPRENDE UNA PLURALIDAD DE CAPAS SEMICONDUCTORAS (10, 11, 12, 13, 14, 15) DE TIPO DE CONDUCTIVIDAD ALTERNATIVAMENTE OPUESTO. LAS HETEROUNIONES (1.1; 1.2; 1.3) EN LAS ETAPAS AMPLIFICADORAS, ESTAN FORMADAS POR LAS CAPAS P Y N (10 Y 11; 12 Y 13; 14 Y 15) Y LAS HETEROUNIONES (1.4 Y 1.5) FORMADAS ENTRE LAS CAPAS N Y P (11 Y 12; 13 Y 14). AL APLICAR TENSION A LOS ELECTRODOS (21, 22, 23), FABRICADOS SOBRE LAS CAPAS P (10, 12, 14), SE PROPORCIONA POLARIDAD DIRECTA A LAS HETEROUNIONES (1.4; 1.5) Y POLARIDAD INVERSA A LAS HETEROUNIONES (1.1; 1.2; 1.3) Y SIRVEN PARA SEPARAR LAS LAGUNAS ACUMULADAS EN LAS TRAMPAS DEL DISPOSITIVO (1); ESTA SEPARACION DE LAGUNAS AYUDA TAMBIEN A MEJORAR EL TIEMPO DE RESPUESTA DEL DISPOSITIVO (1).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/064,040 US4250516A (en) | 1979-08-06 | 1979-08-06 | Multistage avalanche photodetector |
Publications (2)
Publication Number | Publication Date |
---|---|
ES8104640A1 true ES8104640A1 (es) | 1981-04-16 |
ES494006A0 ES494006A0 (es) | 1981-04-16 |
Family
ID=22053169
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES494006A Granted ES494006A0 (es) | 1979-08-06 | 1980-08-05 | Perfeccionamientos en detectores de ionizacion acumulativa |
Country Status (5)
Country | Link |
---|---|
US (1) | US4250516A (es) |
EP (1) | EP0023723A3 (es) |
JP (1) | JPS56500990A (es) |
ES (1) | ES494006A0 (es) |
WO (1) | WO1981000488A1 (es) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56165473A (en) * | 1980-05-24 | 1981-12-19 | Semiconductor Res Found | Semiconductor pickup device |
US4486765A (en) * | 1981-12-07 | 1984-12-04 | At&T Bell Laboratories | Avalanche photodetector including means for separating electrons and holes |
US4476477A (en) * | 1982-02-23 | 1984-10-09 | At&T Bell Laboratories | Graded bandgap multilayer avalanche photodetector with energy step backs |
JPS5984589A (ja) * | 1982-11-08 | 1984-05-16 | Fujitsu Ltd | アバランシフオトダイオード |
US4568959A (en) * | 1983-06-02 | 1986-02-04 | International Business Machines Corporation | Photomultiplier |
US4620214A (en) * | 1983-12-02 | 1986-10-28 | California Institute Of Technology | Multiple quantum-well infrared detector |
GB8417303D0 (en) * | 1984-07-06 | 1984-08-08 | Secr Defence | Infra-red detector |
FR2583577B1 (fr) * | 1985-06-18 | 1987-08-07 | Thomson Csf | Procede de realisation d'un dispositif photodetecteur semi-conducteur a avalanche et dispositif ainsi realise |
FR2612334B1 (fr) * | 1986-12-12 | 1989-04-21 | Thomson Csf | Dispositif de multiplication de porteurs de charge par un phenomene d'avalanche et son application aux photodetecteurs, aux photocathodes, et aux visionneurs infrarouges |
US6534783B1 (en) * | 1989-12-27 | 2003-03-18 | Raytheon Company | Stacked multiple quantum well superlattice infrared detector |
US6369436B1 (en) * | 2000-05-22 | 2002-04-09 | Boris Gilman | Semiconductor wavelength demultiplexer |
US8279411B2 (en) * | 2008-08-27 | 2012-10-02 | The Boeing Company | Systems and methods for reducing crosstalk in an avalanche photodiode detector array |
US9395182B1 (en) | 2011-03-03 | 2016-07-19 | The Boeing Company | Methods and systems for reducing crosstalk in avalanche photodiode detector arrays |
DE102017011643B4 (de) * | 2017-12-15 | 2020-05-14 | Azur Space Solar Power Gmbh | Optische Spannungsquelle |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3982261A (en) * | 1972-09-22 | 1976-09-21 | Varian Associates | Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices |
US4206002A (en) * | 1976-10-19 | 1980-06-03 | University Of Pittsburgh | Graded band gap multi-junction solar energy cell |
US4103312A (en) * | 1977-06-09 | 1978-07-25 | International Business Machines Corporation | Semiconductor memory devices |
US4110778A (en) * | 1977-06-21 | 1978-08-29 | The United States Of America As Represented By The Secretary Of The Air Force | Narrow-band inverted homo-heterojunction avalanche photodiode |
FR2399740A1 (fr) * | 1977-08-02 | 1979-03-02 | Thomson Csf | Diode a avalanche a hetero-jonction, et oscillateur en mode dit " a temps de transit " utilisant une telle diode |
US4127862A (en) * | 1977-09-06 | 1978-11-28 | Bell Telephone Laboratories, Incorporated | Integrated optical detectors |
FR2408915A1 (fr) * | 1977-11-10 | 1979-06-08 | Thomson Csf | Photodiode a heterojonction, fonctionnant en avalanche sous une faible tension de polarisation |
US4179702A (en) * | 1978-03-09 | 1979-12-18 | Research Triangle Institute | Cascade solar cells |
US4163237A (en) * | 1978-04-24 | 1979-07-31 | Bell Telephone Laboratories, Incorporated | High mobility multilayered heterojunction devices employing modulated doping |
US4203124A (en) * | 1978-10-06 | 1980-05-13 | Bell Telephone Laboratories, Incorporated | Low noise multistage avalanche photodetector |
US4213138A (en) * | 1978-12-14 | 1980-07-15 | Bell Telephone Laboratories, Incorporated | Demultiplexing photodetector |
-
1979
- 1979-08-06 US US06/064,040 patent/US4250516A/en not_active Expired - Lifetime
-
1980
- 1980-07-24 WO PCT/US1980/000921 patent/WO1981000488A1/en unknown
- 1980-07-24 JP JP50191480A patent/JPS56500990A/ja active Pending
- 1980-08-05 ES ES494006A patent/ES494006A0/es active Granted
- 1980-08-06 EP EP80104611A patent/EP0023723A3/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
US4250516A (en) | 1981-02-10 |
EP0023723A2 (en) | 1981-02-11 |
JPS56500990A (es) | 1981-07-16 |
ES494006A0 (es) | 1981-04-16 |
EP0023723A3 (en) | 1982-03-31 |
WO1981000488A1 (en) | 1981-02-19 |
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