KR830009646A - 반도체 소자 - Google Patents

반도체 소자 Download PDF

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KR830009646A
KR830009646A KR1019820001382A KR820001382A KR830009646A KR 830009646 A KR830009646 A KR 830009646A KR 1019820001382 A KR1019820001382 A KR 1019820001382A KR 820001382 A KR820001382 A KR 820001382A KR 830009646 A KR830009646 A KR 830009646A
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semiconductor film
hydrogen
polycrystalline
lithium
content
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KR860001161B1 (ko
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요시후미 가다야마
도시가즈 시마다
에이이찌 마루야마
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미다 가쓰시게루(三田勝茂)
가부시기 가이샤 히다찌 세이사꾸쇼
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Abstract

내용 없음

Description

반도체 소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도에서 7도는 본 발명의 반도체 소자에서 중요한 부분의 단면도이다.

Claims (16)

  1. 다결정 반도체막이 수소, 불소, 염소, 브롬, 요오드, 리튬, 나트륨, 칼륨, 루비듐, 세슘 등의 원소중 최소한 하나의 원소를 포함하여 원소의 총 함유량이 반도체막 평균의 원자비로 100ppm에서 40%까지 대체로 한정지어지는 결정면의 결정 경계를 갖도록 하여서 몸체의 기판상에 형성된 반도체소자.
  2. 제1항에 있어서 반도체 소자의 다결정 반도체막이 주로 실리콘으로 만들어진 반도체 소자.
  3. 제1항 및 2항에 있어서 다결정 반도체막이 불소, 염소, 브롬, 요오드로 구성되는 할로겐원소중 하나의 원소와 수소, 리튬, 나트륨, 칼륨, 리튬, 세슘으로 구성되는 원소중 최소한 하나의 원소를 포함하는 반도체 소자.
  4. 제3항에 있어서 할로겐 원소의 함유량과 수소나 1가 금속원소의 함유량이 각각100ppm에서 10%까지의 원자비로 하는 반도체 소자.
  5. 최소한 반도체막과 게이트 전극 사이에 있는 처음과 두번째의 불순물 지역에서는, 다결정 반도체막이 수소, 불소, 염소, 브롬, 요오드, 리튬, 나트륨, 칼륨, 루비듐, 세슘등으로 구성되는 원소중에서 선택된 최소한 하나의 원소를 포함하여 그 포함된 원소의 총함유량이 반도체막의 평균적인 원자비가 100pm에서 40%까지 대체로 한정되는 결정면 경계를 갖도록하여서 기판상에 형성된 전계효과 트랜지스터.
  6. 제5항에 있어서 다결정 반도체막이 주로 실리콘으로 만들어진 전계효과 트랜지스터.
  7. 제5항 및 제6항에 있어서 다결정 반도체막이 불소, 염소, 브롬, 요오드로 구성되는 할로겐 원소중 선택된 최소한 하나의 원소와 수소, 리튬, 나트륨, 칼륨, 루비듐, 세슘으로 구성된 원소중에서 선택된 최소한 하나의 원소를 포함하여서 된 전계효과 트랜지스터.
  8. 제7항에 있어서 할로겐 원소의 함유량과 수소와 1가 금속원소의 함유량이 각각 원자비로 100ppm에서 10%로 하는 전계효과 트랜지스터.
  9. 기판과, 주로 실리콘으로 구성된 다결정 실리콘 박막과, 실리콘 박막의 양 반대면에 처음의 투명전극과 두번째의 전극을 갖고 있으며 그리고 빛을 쪼일때 나오는 양과 음의 캐리어를 구별하는데 사용되는 실리콘 박막의 접합부분을 갖고 있되, 그곳에 상기 다결정 실리콘 박막이 수소, 불소, 염소, 브롬, 요오드, 리튬, 나트륨, 칼륨, 루비듐, 세슘으로 구성된 원소중에서 선택된 최소한 하나의 원소를 포함하여 포함된 원소의 총 함유량이 반도체막의 평균적인 원자비로 100ppm에서 40%까지 대체로 한정된 결정면 경계를 갖도록 하여서 된 박막태양전지.
  10. 제9항에 있어서, 다결정 박막이 주로 실리콘으로 만들어진 박막태양전지.
  11. 제9항 및 제10항에 있어서 상기 다결정 박막이 불소, 염소, 브롬, 요오드로 구성된 할로겐 원소중에서 선택된 최소한 하나의 원소와, 수소, 리튬, 나트륨, 칼륨, 루비듐, 세슘등의 원소중에서 선택된 최소한 하나의 원소를 포함하여서 된 박막태양전지.
  12. 제11항에 있어서 상기 할로겐 원소의 함유량과 수소나 1가 속원소의 함유량이 각각 100ppm에서 10%의 원자비로 하는 박막태양전지.
  13. 기판상에 형성된 다결정 반도체막과, pn접합의 반대측에 처음과 두번째 전극이 있어 반도체막에 형성된 상기 pn접합을 갖고 있되 그곳의 다결정 반도체막이 수소,불소, 염소, 브롬, 요오드, 리튬, 나트륨, 칼륨, 루비듐, 세슘으로 구성되는 원소중에서 선택된 최소한 하나의 원소를 포함하여 그 포함된 원소의 총함유량이 반도체막의 평균적인 원자비로 100ppm에서 40%까지 대체로 한정된 결정 경계면을 갖도록 하여서된 다이오드.
  14. 제13항에 있어서, 다결정 반도체막이 주로 실리콘으로 구성되 있는 다이오드.
  15. 제13항 및 14항에 있어서 다결정 반도체막이 불소, 염소, 브롬, 요오드로 구성되는 원소중에서 선택된 최소한 하나의 할로겐원소와, 수소, 리튬, 나트륨, 칼륨, 루비듐, 세슘으로 구성되는 원소중 최소한 하나의 원소를 포함하고 있는 반도체소자.
  16. 제14항에 있어서 할로겐 원소의 함유량과 수소나 1가 금속원소의 함유량은 각각 100ppm에서의 10%의 원자비로 되어있는 반도체소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR8201382A 1981-03-30 1982-03-30 반도체 장치 KR860001161B1 (ko)

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JP56045553A JPS57160123A (en) 1981-03-30 1981-03-30 Semiconductor device
JP81-45553 1981-03-30

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KR830009646A true KR830009646A (ko) 1983-12-22
KR860001161B1 KR860001161B1 (ko) 1986-08-18

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KR8201382A KR860001161B1 (ko) 1981-03-30 1982-03-30 반도체 장치

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US (1) US4613382A (ko)
EP (1) EP0061923B1 (ko)
JP (1) JPS57160123A (ko)
KR (1) KR860001161B1 (ko)
CA (1) CA1189940A (ko)
DE (1) DE3278527D1 (ko)

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JPH0828379B2 (ja) * 1990-05-28 1996-03-21 株式会社東芝 半導体装置の製造方法
DE69125886T2 (de) * 1990-05-29 1997-11-20 Semiconductor Energy Lab Dünnfilmtransistoren
JPH0611705A (ja) * 1992-01-31 1994-01-21 Sony Corp 能動素子基板
JPH06151801A (ja) * 1992-11-13 1994-05-31 Canon Inc 光電変換装置及び光電変換装置の製造方法
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US6936485B2 (en) * 2000-03-27 2005-08-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light emitting device
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Also Published As

Publication number Publication date
DE3278527D1 (en) 1988-06-23
CA1189940A (en) 1985-07-02
JPS57160123A (en) 1982-10-02
KR860001161B1 (ko) 1986-08-18
JPH0363208B2 (ko) 1991-09-30
EP0061923A1 (en) 1982-10-06
US4613382A (en) 1986-09-23
EP0061923B1 (en) 1988-05-18

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