JPS5298480A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5298480A
JPS5298480A JP1487876A JP1487876A JPS5298480A JP S5298480 A JPS5298480 A JP S5298480A JP 1487876 A JP1487876 A JP 1487876A JP 1487876 A JP1487876 A JP 1487876A JP S5298480 A JPS5298480 A JP S5298480A
Authority
JP
Japan
Prior art keywords
semiconductor device
type
substrate
diffusing
selecting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1487876A
Other languages
Japanese (ja)
Inventor
Toshiaki Masuhara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1487876A priority Critical patent/JPS5298480A/en
Publication of JPS5298480A publication Critical patent/JPS5298480A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0927—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising a P-well only in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent leakage current between source region or drain region and substrate by double-diffusing p and n type impurities through the windows spaced at a distance L on an N type substrate and selecting the p type impurity doping amount.
JP1487876A 1976-02-16 1976-02-16 Semiconductor device Pending JPS5298480A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1487876A JPS5298480A (en) 1976-02-16 1976-02-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1487876A JPS5298480A (en) 1976-02-16 1976-02-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5298480A true JPS5298480A (en) 1977-08-18

Family

ID=11873260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1487876A Pending JPS5298480A (en) 1976-02-16 1976-02-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5298480A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5458373A (en) * 1977-10-19 1979-05-11 Agency Of Ind Science & Technol Field effect transistor and complementary type integrated circuit including it
JPS55110076A (en) * 1979-02-15 1980-08-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5458373A (en) * 1977-10-19 1979-05-11 Agency Of Ind Science & Technol Field effect transistor and complementary type integrated circuit including it
JPS55110076A (en) * 1979-02-15 1980-08-25 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device

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