JPS5291658A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5291658A
JPS5291658A JP796076A JP796076A JPS5291658A JP S5291658 A JPS5291658 A JP S5291658A JP 796076 A JP796076 A JP 796076A JP 796076 A JP796076 A JP 796076A JP S5291658 A JPS5291658 A JP S5291658A
Authority
JP
Japan
Prior art keywords
type
semiconductor device
type region
network
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP796076A
Other languages
Japanese (ja)
Other versions
JPS5756780B2 (en
Inventor
Yoichi Araki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP796076A priority Critical patent/JPS5291658A/en
Publication of JPS5291658A publication Critical patent/JPS5291658A/en
Publication of JPS5756780B2 publication Critical patent/JPS5756780B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions

Abstract

PURPOSE:To prevent adverse effects due to leak current and increase the current capacity by forming a network-like P type gate in an N type region and selectively diffusing a P type region from a main surface to thereby prepare low resistance N type shunts.
JP796076A 1976-01-29 1976-01-29 Semiconductor device Granted JPS5291658A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP796076A JPS5291658A (en) 1976-01-29 1976-01-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP796076A JPS5291658A (en) 1976-01-29 1976-01-29 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5291658A true JPS5291658A (en) 1977-08-02
JPS5756780B2 JPS5756780B2 (en) 1982-12-01

Family

ID=11680041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP796076A Granted JPS5291658A (en) 1976-01-29 1976-01-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5291658A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60209044A (en) * 1984-03-30 1985-10-21 東洋紡績株式会社 Fabric for tire cord
JPS6134244A (en) * 1984-07-26 1986-02-18 東レ株式会社 Fabric for reinforcing resin and its production
JPH0343268Y2 (en) * 1987-04-11 1991-09-10
JPH0211173U (en) * 1988-07-05 1990-01-24

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3465216A (en) * 1966-07-22 1969-09-02 Stanislas Teszner Bistable semiconductor device for heavy currents

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3465216A (en) * 1966-07-22 1969-09-02 Stanislas Teszner Bistable semiconductor device for heavy currents

Also Published As

Publication number Publication date
JPS5756780B2 (en) 1982-12-01

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