JPS51140581A - Semiconductor resistance element - Google Patents

Semiconductor resistance element

Info

Publication number
JPS51140581A
JPS51140581A JP6577975A JP6577975A JPS51140581A JP S51140581 A JPS51140581 A JP S51140581A JP 6577975 A JP6577975 A JP 6577975A JP 6577975 A JP6577975 A JP 6577975A JP S51140581 A JPS51140581 A JP S51140581A
Authority
JP
Japan
Prior art keywords
resistance element
semiconductor resistance
semiconductor
voltage dependency
element improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6577975A
Other languages
Japanese (ja)
Other versions
JPS5950099B2 (en
Inventor
Akihiro Kanamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP50065779A priority Critical patent/JPS5950099B2/en
Publication of JPS51140581A publication Critical patent/JPS51140581A/en
Publication of JPS5950099B2 publication Critical patent/JPS5950099B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605—Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To provide a semiconductor resistance element improved in the voltage dependency.
JP50065779A 1975-05-30 1975-05-30 semiconductor resistance element Expired JPS5950099B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50065779A JPS5950099B2 (en) 1975-05-30 1975-05-30 semiconductor resistance element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50065779A JPS5950099B2 (en) 1975-05-30 1975-05-30 semiconductor resistance element

Publications (2)

Publication Number Publication Date
JPS51140581A true JPS51140581A (en) 1976-12-03
JPS5950099B2 JPS5950099B2 (en) 1984-12-06

Family

ID=13296854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50065779A Expired JPS5950099B2 (en) 1975-05-30 1975-05-30 semiconductor resistance element

Country Status (1)

Country Link
JP (1) JPS5950099B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53103384A (en) * 1977-02-22 1978-09-08 Oki Electric Ind Co Ltd Pruduction of semiconductor device
EP0006474A1 (en) * 1978-06-29 1980-01-09 International Business Machines Corporation Method of compensating for the voltage coefficient of ion-implanted or diffused semiconductor resistors
JPS5864059A (en) * 1981-10-14 1983-04-16 Hitachi Ltd High withstand resistance element
JPS6010658A (en) * 1983-06-29 1985-01-19 Nec Corp Semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS629826U (en) * 1985-07-04 1987-01-21

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50149287A (en) * 1974-05-20 1975-11-29

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50149287A (en) * 1974-05-20 1975-11-29

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53103384A (en) * 1977-02-22 1978-09-08 Oki Electric Ind Co Ltd Pruduction of semiconductor device
EP0006474A1 (en) * 1978-06-29 1980-01-09 International Business Machines Corporation Method of compensating for the voltage coefficient of ion-implanted or diffused semiconductor resistors
JPS556886A (en) * 1978-06-29 1980-01-18 Ibm Semiconductor resistor
JPS5864059A (en) * 1981-10-14 1983-04-16 Hitachi Ltd High withstand resistance element
JPH0324788B2 (en) * 1981-10-14 1991-04-04 Hitachi Ltd
JPS6010658A (en) * 1983-06-29 1985-01-19 Nec Corp Semiconductor device

Also Published As

Publication number Publication date
JPS5950099B2 (en) 1984-12-06

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