JPS641286A - Semiconductor photodetector - Google Patents
Semiconductor photodetectorInfo
- Publication number
- JPS641286A JPS641286A JP15610887A JP15610887A JPS641286A JP S641286 A JPS641286 A JP S641286A JP 15610887 A JP15610887 A JP 15610887A JP 15610887 A JP15610887 A JP 15610887A JP S641286 A JPS641286 A JP S641286A
- Authority
- JP
- Japan
- Prior art keywords
- minority carrier
- semiconductor substrate
- metal element
- dead band
- photodetector part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
PURPOSE: To realize suppression of inflow of minority carrier to the adjacent photosensitive element part of the dead band without increase of junction capacitance by diffusing a metal element which shortens the diffusion length of minority carrier into a semiconductor substrate.
CONSTITUTION: A metal element which shortens diffusion length of minority carrier is diffused into a semiconductor substrate 1. As a metal element, Au, for example, is used. Diffusion of metal element is carried out, for example, by thermal diffusion after a photodetector part 2 is provided to a semiconductor substrate 1 consisting of Si wafer. After the photodetector part is thus formed, a necessary electrode is formed, it is then cut into chips and a semiconductor photodetector part of one chip can be formed. In a semiconductor substrate 1, the region other than that providing the photodetector part 2 becomes the dead band. Thereby, the minority carrier which is generated by the light irradiation to dead band flows or the minority carrier generated at the other photodetector part and flowing through the dead band can be lessened by shortening the diffusion length of carrier.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15610887A JPS641286A (en) | 1987-06-23 | 1987-06-23 | Semiconductor photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15610887A JPS641286A (en) | 1987-06-23 | 1987-06-23 | Semiconductor photodetector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH011286A JPH011286A (en) | 1989-01-05 |
| JPS641286A true JPS641286A (en) | 1989-01-05 |
Family
ID=15620484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15610887A Pending JPS641286A (en) | 1987-06-23 | 1987-06-23 | Semiconductor photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS641286A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03120875A (en) * | 1989-10-04 | 1991-05-23 | Yokogawa Electric Corp | Silicon photo sensor |
| WO2002005355A1 (en) * | 2000-07-11 | 2002-01-17 | Sanyo Electric Co., Ltd | Light-receiving device and light-receiving module comprising it |
| JPWO2019097839A1 (en) * | 2017-11-15 | 2020-12-03 | 株式会社カネカ | Photoelectric conversion element and photoelectric conversion device |
-
1987
- 1987-06-23 JP JP15610887A patent/JPS641286A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03120875A (en) * | 1989-10-04 | 1991-05-23 | Yokogawa Electric Corp | Silicon photo sensor |
| WO2002005355A1 (en) * | 2000-07-11 | 2002-01-17 | Sanyo Electric Co., Ltd | Light-receiving device and light-receiving module comprising it |
| US6989522B2 (en) | 2000-07-11 | 2006-01-24 | Sanyo Electric Co., Ltd. | Light-receiving module and light-receiving device having malfunction preventing structure |
| JPWO2019097839A1 (en) * | 2017-11-15 | 2020-12-03 | 株式会社カネカ | Photoelectric conversion element and photoelectric conversion device |
| US11482637B2 (en) | 2017-11-15 | 2022-10-25 | Kaneka Corporation | Photoelectric conversion element and photoelectric conversion device |
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