GB1118826A - Optoelectric systems - Google Patents

Optoelectric systems

Info

Publication number
GB1118826A
GB1118826A GB2513865A GB2513865A GB1118826A GB 1118826 A GB1118826 A GB 1118826A GB 2513865 A GB2513865 A GB 2513865A GB 2513865 A GB2513865 A GB 2513865A GB 1118826 A GB1118826 A GB 1118826A
Authority
GB
Grant status
Application
Patent type
Prior art keywords
transistor
detector
base
region
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2513865A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/14Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • GPHYSICS
    • G02OPTICS
    • G02FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F3/00Optical logic elements; Optical bistable devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/1443Devices controlled by radiation with at least one potential jump or surface barrier
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • H03F3/085Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light using opto-couplers between stages
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making or -braking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used
    • H03K17/78Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/795Electronic switching or gating, i.e. not by contact-making or -braking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors

Abstract

1,118,826. Semi - conductor. TEXAS INSTRUMENTS Inc. 14 June, 1965 [29 June, 1964], No. 25138/65. Heading H3T. [Also in Divisions G1 and H1] In an opto-electronic coupling system the detector and a subsequent semi-conductor device to which its output is delivered are integrated in a single substrate. An integrated circuit comprises a plurality of interconnected components in a body of semi-conductor material, the photo-sensitive detector having at least two regions of opposite conductivity types separated by a rectifying junction, and means are provided for generating optical radiation (including infra-red) directed on the photo-sensitive detector and having a wavelength such that at least a portion of the radiation is absorbed by the photo-sensitive detector to generate charge carriers which are collected at the rectifying junction. A wide-band amplifier, Fig. 17, includes a diode detector connected between base and ground of a transistor 60 which arrangement overcomes difficulties arising from the mal collection of charge carriers at the rectifying junction (42), Fig. 4 (not shown), and a resistor 111 to limit the base current to a value less than the photo-current generated by the diode in response to light from a signalling source 2 which may be gallium-arsenide. An additional transistor which may be N.P.N. or P.N.P. 64 connected in the Darlington configuration is provided to increase amplification and eliminate the Miller effect, the transistor not cutting off and on but having its degree of conduction changed by the detected light. Negative feed-back is provided between the collector of transistor 64 and the base of transistor 60, and between the collector of transistor 80 and the collector of transistor 64 through a transistor 72, the latter feed-back circuit including transistor 130. The feed-back to transistor 60 enables the value of resistor 111 to be considerably reduced in value and thus in size, and the feed-back to transistor 64 via transistors 130 and 72 holds the collector potential, and thus the base value of transistor 80, at a value preventing saturation of the transistor 80. A resistor 140 between the base of transistor 130 and the collector of transistor 72 prevents the charging of the Miller capacitance in transistor 130. The resistor 111 which is formed by a path in the silicon body base produces distortion at high frequencies due to its distributed capacity and the distortion is eliminated by the inclusion of capacitor 114 in the feed-back path to transistor 60, the eliminating circuit comprising resistors 110-113. A final emitter follower stage 86 to output terminals 91, 92 is provided. An analysis of the circuit by reference to a succession of simple embodiments in which the reason for the inclusion of the various components is explained is included. Practical embodiments of the circuits integrated into a silicon P base are described with reference to Figs. 4, 6, 10, 18, 19 and 20 (not shown) and in it the detector is shown as either a diode separated from the body by a rectifying junction or as a single diffused element in the body. Thermal stability is achieved by the use of identical transistors which mutually compensate for parameter variations, and the amplifier is said to be suitable for a range from D.C. to megacycles A.C. The light source is mounted above the detector diode from which it is separated by a layer of optically transparent material such as glass. Distributed capacitance introduced by the proximity of the light element may be eliminated by diffusing a P-type impurity into the N-type region 35, and into the top surface of the original substratematerial to form a P-type region 160, Fig. 19, overlaying the region 33. The original substrate is selectively overlayed by a layer of silicon oxide 166, e.g. the P-type detector region is not overlayed. Aluminium electrodes 168, 170 are formed respectively over the oxide layer and on the extreme exposed end of an N+ region to form a contact with cathode 33. The capacitor 114 is formed by three diffusions as follows: an N-type impurity is selectively diffused within an opening in the silicon oxide layer, a P-type region is diffused into this region and finally an N-type impurity is diffused into the P-type region. The resistor 111 may be formed by a double diffusion process. Fabrication of a transistor by a four-step diffusion process which isolates the P-type collector from the P-type substrate is also described. A differential amplifier including a number of the basic features of Fig. 17 and energized by two light sources is described with reference to Fig. 22 (not shown), and an alternative arrangement dispensing with one of the light sources and substituting a capacitor for the corresponding detector is referred to.
GB2513865A 1964-06-29 1965-06-14 Optoelectric systems Expired GB1118826A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US37975564 true 1964-06-29 1964-06-29

Publications (1)

Publication Number Publication Date
GB1118826A true true GB1118826A (en) 1968-07-03

Family

ID=23498545

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2513865A Expired GB1118826A (en) 1964-06-29 1965-06-14 Optoelectric systems

Country Status (4)

Country Link
JP (1) JPS4931593B1 (en)
DE (2) DE1261164B (en)
GB (1) GB1118826A (en)
NL (1) NL161010C (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2125620A (en) * 1982-08-19 1984-03-07 Western Electric Co Integrated circuit array
GB2194389A (en) * 1986-08-20 1988-03-02 Agency Ind Science Techn Optical control circuit and semiconductor device

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5548463B2 (en) * 1976-05-12 1980-12-05
DE3132623A1 (en) * 1981-08-18 1983-03-03 Siemens Ag An apparatus for realization of a logical operation
DE3713067A1 (en) * 1986-09-30 1988-03-31 Siemens Ag Optoelectronic coupling element and process for its manufacture
JP2812874B2 (en) * 1994-04-25 1998-10-22 シャープ株式会社 The optical coupling element
DE102005021298A1 (en) * 2005-05-09 2006-11-16 Rohde & Schwarz Gmbh & Co. Kg Opto-electronic controlled switch or modulator and attenuator

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2125620A (en) * 1982-08-19 1984-03-07 Western Electric Co Integrated circuit array
GB2194389A (en) * 1986-08-20 1988-03-02 Agency Ind Science Techn Optical control circuit and semiconductor device
GB2194389B (en) * 1986-08-20 1990-02-14 Agency Ind Science Techn Optical control circuit and semiconductor device for realizing the circuit

Also Published As

Publication number Publication date Type
DE1261164B (en) 1968-02-15 application
JPS4931593B1 (en) 1974-08-22 grant
NL161010C (en) 1979-12-17 grant
DE1514830A1 (en) 1969-06-19 application
NL6508345A (en) 1965-12-30 application
NL161010B (en) 1979-07-16 application
DE1514830B2 (en) 1976-11-18 application

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