KR920007205A - 전하/전압 변환효율의 측정방법 - Google Patents

전하/전압 변환효율의 측정방법 Download PDF

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Publication number
KR920007205A
KR920007205A KR1019910015228A KR910015228A KR920007205A KR 920007205 A KR920007205 A KR 920007205A KR 1019910015228 A KR1019910015228 A KR 1019910015228A KR 910015228 A KR910015228 A KR 910015228A KR 920007205 A KR920007205 A KR 920007205A
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KR
South Korea
Prior art keywords
voltage
charge
voltage conversion
measuring
substrate
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Application number
KR1019910015228A
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English (en)
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KR0185396B1 (ko
Inventor
오사무 니시마
도모유끼 스즈끼
가즈히꼬 니시보리
Original Assignee
오가 노리오
소니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR920007205A publication Critical patent/KR920007205A/ko
Application granted granted Critical
Publication of KR0185396B1 publication Critical patent/KR0185396B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76816—Output structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N17/00—Diagnosis, testing or measuring for television systems or their details
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Biomedical Technology (AREA)
  • General Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Testing, Inspecting, Measuring Of Stereoscopic Televisions And Televisions (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

내용 없음

Description

전하/전압 변환효율의 측정방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명에 의한 전하/전압 변환효율의 측정방법이 적용되는 CCD촬상소자 및 그 구동계의 구성도.
제2도는 감광부의 종방향의 포텐셜분포도.
제3도는 인터라인전송방식 CCD촬상소자의 구성도.

Claims (1)

  1. 감광부에 축척된 신호전하를 기판에 취출하도록 이루어진 전자셔터기능부가 고체촬상소자에 있어서, 상기 기판에 소정의 제1레벨의 전압을 인가하여 출력부의 출력전압을 측정하는 제1의 행정과, 상기 기판에 상기 제1레벨 보다 높은 제2레벨의 전압을 인가하여 기판전류를 측정하는 제2의 행정과, 상기 출력전압과 상기 기판전류의 비에 의거하여 전하/전압 변화효율을 산출하는 제3의 행정으로 이루어지는 것을 특징으로 하는 전하/전압 변환율의 측정방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019910015228A 1990-09-27 1991-09-02 전하/전압변환효율의 측정방법 KR0185396B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02258515A JP3097121B2 (ja) 1990-09-27 1990-09-27 電荷／電圧変換効率の測定方法
JP90-258515 1990-09-27

Publications (2)

Publication Number Publication Date
KR920007205A true KR920007205A (ko) 1992-04-28
KR0185396B1 KR0185396B1 (ko) 1999-03-20

Family

ID=17321284

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910015228A KR0185396B1 (ko) 1990-09-27 1991-09-02 전하/전압변환효율의 측정방법

Country Status (3)

Country Link
US (1) US5471246A (ko)
JP (1) JP3097121B2 (ko)
KR (1) KR0185396B1 (ko)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3271086B2 (ja) * 1992-09-29 2002-04-02 ソニー株式会社 固体撮像素子の駆動回路
JP3062010B2 (ja) * 1994-07-28 2000-07-10 日本電気株式会社 固体撮像装置
US5598210A (en) * 1995-02-15 1997-01-28 Eastman Kodak Company On chip driver for electric shuttering
JP2897689B2 (ja) * 1995-05-31 1999-05-31 日本電気株式会社 固体撮像装置
JP3715353B2 (ja) * 1995-09-01 2005-11-09 ソニー株式会社 固体撮像素子
JP2816824B2 (ja) * 1995-09-11 1998-10-27 エルジイ・セミコン・カンパニイ・リミテッド Ｃｃｄ固体撮像素子
JP3598648B2 (ja) * 1996-04-02 2004-12-08 ソニー株式会社 電荷転送素子及び電荷転送素子の駆動方法
KR100192954B1 (ko) * 1996-07-18 1999-06-15 김광호 수직형 전달게이트를 가지는 전하결합형 고체촬상소자 및 그 제조방법
JP3351503B2 (ja) * 1996-10-09 2002-11-25 シャープ株式会社 固体撮像装置
US6535247B1 (en) * 1998-05-19 2003-03-18 Pictos Technologies, Inc. Active pixel sensor with capacitorless correlated double sampling
US6166585A (en) * 1998-08-31 2000-12-26 Conexant Systems, Inc. Methods and apparatus for a high efficiency charge pump that includes a MOSFET capacitor operating in an accumulation region
JP4403687B2 (ja) * 2002-09-18 2010-01-27 ソニー株式会社 固体撮像装置およびその駆動制御方法
JP4299697B2 (ja) * 2004-03-04 2009-07-22 シャープ株式会社 固体撮像装置
JP5194645B2 (ja) * 2007-08-29 2013-05-08 ソニー株式会社 半導体装置の製造方法
JP5730030B2 (ja) * 2011-01-17 2015-06-03 浜松ホトニクス株式会社 固体撮像装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2392392A1 (fr) * 1977-05-27 1978-12-22 Commissariat Energie Atomique Circuit de mesure de charge stockee dans un d.t.c.
JPS6157181A (ja) * 1984-08-28 1986-03-24 Sharp Corp 固体撮像装置
US4811371A (en) * 1986-05-16 1989-03-07 Rca Corporation Floating-diffusion electrometer with adjustable sensitivity
US4680489A (en) * 1986-09-25 1987-07-14 Rockwell International Corporation Controllable piecewise linear gain circuit
US4875100A (en) * 1986-10-23 1989-10-17 Sony Corporation Electronic shutter for a CCD image sensor
US4912560A (en) * 1988-01-29 1990-03-27 Kabushiki Kaisha Toshiba Solid state image sensing device
JPH0795829B2 (ja) * 1988-07-26 1995-10-11 株式会社東芝 固体撮像装置
JP2727584B2 (ja) * 1988-09-20 1998-03-11 ソニー株式会社 固体撮像装置
JPH02146876A (ja) * 1988-11-29 1990-06-06 Toshiba Corp 光センサの駆動方法
JPH02155378A (ja) * 1988-12-07 1990-06-14 Nec Corp 固体撮像素子の駆動方法
JPH02262344A (ja) * 1989-03-31 1990-10-25 Sony Corp 出力回路

Also Published As

Publication number Publication date
KR0185396B1 (ko) 1999-03-20
JPH04135397A (ja) 1992-05-08
JP3097121B2 (ja) 2000-10-10
US5471246A (en) 1995-11-28

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