JPS56154880A - Solid-state image sensor - Google Patents

Solid-state image sensor

Info

Publication number
JPS56154880A
JPS56154880A JP5750380A JP5750380A JPS56154880A JP S56154880 A JPS56154880 A JP S56154880A JP 5750380 A JP5750380 A JP 5750380A JP 5750380 A JP5750380 A JP 5750380A JP S56154880 A JPS56154880 A JP S56154880A
Authority
JP
Japan
Prior art keywords
voltage
signal charge
pulse
circuit
outputted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5750380A
Other languages
Japanese (ja)
Other versions
JPS6161589B2 (en
Inventor
Nobuo Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5750380A priority Critical patent/JPS56154880A/en
Priority to DE19813116785 priority patent/DE3116785A1/en
Publication of JPS56154880A publication Critical patent/JPS56154880A/en
Publication of JPS6161589B2 publication Critical patent/JPS6161589B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/71—Circuitry for evaluating the brightness variation
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/70—Circuitry for compensating brightness variation in the scene
    • H04N23/73—Circuitry for compensating brightness variation in the scene by influencing the exposure time

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE: To set a sensitization time by a simple constitution without time lag, by enabling to read data when the average value of photoelectrically converted signal charge reaches a set value.
CONSTITUTION: Once pulse ϕT is outputted from pulse generating circuit 13, control gate 6 opens to read signal charge at photosensitive part 2. After accumulated voltage 4 reaches voltge VO, reset pulse ϕRS is held at level L and insulated from the voltage source connected to source terminal 17 of transistor Tr17. Then, signal charge is accumulated under electrode 4, so that electrode 4 changes in potential. This change in potential appears as output voltage VST of source follower circuit 10. As voltage VST drops gradually below reference voltage V2 of comparator 11, output voltage VC of circuit 11 varies. The change in voltage VC results in that pulses ϕRS and ϕT are outputted from pulse generating circuit 12 and 13 to repeat the said operation.
COPYRIGHT: (C)1981,JPO&Japio
JP5750380A 1980-04-30 1980-04-30 Solid-state image sensor Granted JPS56154880A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP5750380A JPS56154880A (en) 1980-04-30 1980-04-30 Solid-state image sensor
DE19813116785 DE3116785A1 (en) 1980-04-30 1981-04-28 Solid state image scanning device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5750380A JPS56154880A (en) 1980-04-30 1980-04-30 Solid-state image sensor

Publications (2)

Publication Number Publication Date
JPS56154880A true JPS56154880A (en) 1981-11-30
JPS6161589B2 JPS6161589B2 (en) 1986-12-26

Family

ID=13057521

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5750380A Granted JPS56154880A (en) 1980-04-30 1980-04-30 Solid-state image sensor

Country Status (2)

Country Link
JP (1) JPS56154880A (en)
DE (1) DE3116785A1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127371A (en) * 1982-01-25 1983-07-29 Toshiba Corp Solid-state image pickup device
JPS5975773A (en) * 1982-10-25 1984-04-28 Toshiba Corp Solid-state image pickup device
JPS59221178A (en) * 1983-05-31 1984-12-12 Toshiba Corp Solid-state image pickup device
JPS60254770A (en) * 1984-05-31 1985-12-16 Fujitsu Ltd Charge transfer device
JPS61226953A (en) * 1985-03-30 1986-10-08 Fujitsu Ltd Image sensor
US5028948A (en) * 1986-12-27 1991-07-02 Olympus Optical Company Ltd. Photoelectric transducer apparatus for focus detection

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4479062A (en) * 1981-02-06 1984-10-23 Asahi Kogaku Kogyo Kabushiki Kaisha Photo-electric conversion device with accumulation time control
JPS614376A (en) * 1984-06-19 1986-01-10 Olympus Optical Co Ltd Solid-state image pickup device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4321486A (en) * 1980-02-22 1982-03-23 Honeywell Inc. Photodetector signal control in charge transfer device imager

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127371A (en) * 1982-01-25 1983-07-29 Toshiba Corp Solid-state image pickup device
JPH0263313B2 (en) * 1982-01-25 1990-12-27 Tokyo Shibaura Electric Co
JPS5975773A (en) * 1982-10-25 1984-04-28 Toshiba Corp Solid-state image pickup device
JPS59221178A (en) * 1983-05-31 1984-12-12 Toshiba Corp Solid-state image pickup device
JPH0437629B2 (en) * 1983-05-31 1992-06-19 Tokyo Shibaura Electric Co
JPS60254770A (en) * 1984-05-31 1985-12-16 Fujitsu Ltd Charge transfer device
JPH0518265B2 (en) * 1984-05-31 1993-03-11 Fujitsu Ltd
JPS61226953A (en) * 1985-03-30 1986-10-08 Fujitsu Ltd Image sensor
JPH0521349B2 (en) * 1985-03-30 1993-03-24 Fujitsu Ltd
US5028948A (en) * 1986-12-27 1991-07-02 Olympus Optical Company Ltd. Photoelectric transducer apparatus for focus detection

Also Published As

Publication number Publication date
DE3116785A1 (en) 1982-01-28
DE3116785C2 (en) 1987-08-20
JPS6161589B2 (en) 1986-12-26

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