JPS5657368A - Solid-state image pickup device - Google Patents
Solid-state image pickup deviceInfo
- Publication number
- JPS5657368A JPS5657368A JP13324779A JP13324779A JPS5657368A JP S5657368 A JPS5657368 A JP S5657368A JP 13324779 A JP13324779 A JP 13324779A JP 13324779 A JP13324779 A JP 13324779A JP S5657368 A JPS5657368 A JP S5657368A
- Authority
- JP
- Japan
- Prior art keywords
- photodetector
- solid
- image pickup
- pickup device
- state image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000035945 sensitivity Effects 0.000 abstract 4
- 239000011159 matrix material Substances 0.000 abstract 2
- 230000003287 optical effect Effects 0.000 abstract 2
- 230000003595 spectral effect Effects 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Abstract
PURPOSE:To increase the sensitivity and the spectral sensitivity properties and at the same time prevent occurrence of the short circuit, by using the photodiode for the photodetector and in the light reception region composed of several photodetectors which store the signal charge in accordance with the optical information distributed in a matrix form. CONSTITUTION:The light reception region 31 is formed with several photodetectors which store the signal charge in accordance with the optical information distributed in a matrix form. The photodiode 54' is used for the photodetector, and formed by giving the n<+> diffusion into the P-type Si substrate 51 to have a higher sensitivity than the photodetector of MOS structure and have the excellent spectral sensitivity properties. In addition, the diode 54' prevents the occurrence of the short circuit since it has no overlap to the gate 57.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13324779A JPS5657368A (en) | 1979-10-15 | 1979-10-15 | Solid-state image pickup device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13324779A JPS5657368A (en) | 1979-10-15 | 1979-10-15 | Solid-state image pickup device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5657368A true JPS5657368A (en) | 1981-05-19 |
Family
ID=15100138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13324779A Pending JPS5657368A (en) | 1979-10-15 | 1979-10-15 | Solid-state image pickup device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5657368A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57202183A (en) * | 1981-06-05 | 1982-12-10 | Matsushita Electric Ind Co Ltd | Solid-state image pickup device |
JPS5813080A (en) * | 1981-07-16 | 1983-01-25 | Matsushita Electric Ind Co Ltd | Solid-state image pickup element |
-
1979
- 1979-10-15 JP JP13324779A patent/JPS5657368A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57202183A (en) * | 1981-06-05 | 1982-12-10 | Matsushita Electric Ind Co Ltd | Solid-state image pickup device |
JPS5813080A (en) * | 1981-07-16 | 1983-01-25 | Matsushita Electric Ind Co Ltd | Solid-state image pickup element |
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