KR920008982A - 박막 el표시소자의 제조방법 및 구조 - Google Patents

박막 el표시소자의 제조방법 및 구조 Download PDF

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Publication number
KR920008982A
KR920008982A KR1019900017600A KR900017600A KR920008982A KR 920008982 A KR920008982 A KR 920008982A KR 1019900017600 A KR1019900017600 A KR 1019900017600A KR 900017600 A KR900017600 A KR 900017600A KR 920008982 A KR920008982 A KR 920008982A
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KR
South Korea
Prior art keywords
layer
thin film
insulating layer
light absorption
display device
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KR1019900017600A
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English (en)
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KR930010129B1 (ko
Inventor
류재화
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이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019900017600A priority Critical patent/KR930010129B1/ko
Priority to US07/785,371 priority patent/US5352543A/en
Priority to DE69122030T priority patent/DE69122030T2/de
Priority to EP91118475A priority patent/EP0483783B1/en
Priority to JP3286001A priority patent/JPH0824070B2/ja
Publication of KR920008982A publication Critical patent/KR920008982A/ko
Application granted granted Critical
Publication of KR930010129B1 publication Critical patent/KR930010129B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/917—Electroluminescent

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

내용 없음.

Description

박막 EL 표시소자의 제조방법 및 구조
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도와 제 2 도는 종래의 박막 EL 구조 단면도.
제 3 도는 본 발명에 따른 박막 EL 구조 단면도.
* 도면의 주요부분에 대한 부호의 설명
1, 11 : 기판 2, 12 : 투명전극
3, 5, 13, 15 : 절연층 4, 14 : 형광층
6, 16 : 배면전극 17, 19 : 광흡수층
18 : 배면 절연층

Claims (5)

  1. 기판위에 투명전극과 제1절연층 및 형광층, 제2절연층, 배면전극으로 구성된 EL표시소자에 있어서, 제2절연층(15)위에 SiNx를 증착시켜 제1광흡수층(17)을 성막하고, 상기 제1광흡수층(17)위에 배면전극(16)을 성막하고, 상기 배면전극(16)을 습식 에칭하여 RIE(Reactive Ion Etching)법으로 상기 제1광흡수층(17)을 건식에칭한후 배면 절연층(18)을 성막하고, 상기 배면절연층(18)위에 카본으로 제2광흡수층(19)을 성막하는 것을 특징으로 하는 박막 EL표시소자의 제조방법.
  2. 제1항에 있어서, 제 1 광흡수층은 SiNx에서 x의 값이 0.1~0.5로 한 것을 특징으로 하는 EL 표시소자의 제조방법.
  3. 기판위에 투명전극과 제 1 절연층 및 형광층, 제 2 절연층, 배면전극으로 구성된 EL 표시소자에 있어서, 제 2 절연층(15)위에 SiNx로 성막된 제 1 광흡수층(17)을 형성하며, 제 1 광흡수층(17)위에 배면전극(16)을 형성하고, 상기 배면전극(16)위에 배면절연층(18)을 형성하고, 상기 배면절연층(18)위에 카본으로 성막된 제 2 광흡수층(19)이 형성된 것을 특징으로 하는 박막 EL 표시소자의 소자.
  4. 제 3 항에 있어서, 제 1 광흡수층은 SiNx에서 x의 값이 0.1~0.5인 것을 특징으로 하는 박막 EL 표시소자의 구조.
  5. 제 3 항 또는 제 4 항에 있어서, 제 1 광흡수층은 두께가 100~200nm인 것을 특징으로 하는 박막 EL 표시소자의 구조.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900017600A 1990-10-31 1990-10-31 박막 el 표시소자의 제조방법 및 구조 KR930010129B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019900017600A KR930010129B1 (ko) 1990-10-31 1990-10-31 박막 el 표시소자의 제조방법 및 구조
US07/785,371 US5352543A (en) 1990-10-31 1991-10-30 Structure of thin film electroluminescent device
DE69122030T DE69122030T2 (de) 1990-10-31 1991-10-30 Herstellungsverfahren und Struktur einer elektrolumineszenten Dünnfilmvorrichtung
EP91118475A EP0483783B1 (en) 1990-10-31 1991-10-30 Fabrication method and structure of a thin film electroluminescent device
JP3286001A JPH0824070B2 (ja) 1990-10-31 1991-10-31 薄膜電界発光表示素子および製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900017600A KR930010129B1 (ko) 1990-10-31 1990-10-31 박막 el 표시소자의 제조방법 및 구조

Publications (2)

Publication Number Publication Date
KR920008982A true KR920008982A (ko) 1992-05-28
KR930010129B1 KR930010129B1 (ko) 1993-10-14

Family

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KR1019900017600A KR930010129B1 (ko) 1990-10-31 1990-10-31 박막 el 표시소자의 제조방법 및 구조

Country Status (5)

Country Link
US (1) US5352543A (ko)
EP (1) EP0483783B1 (ko)
JP (1) JPH0824070B2 (ko)
KR (1) KR930010129B1 (ko)
DE (1) DE69122030T2 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100379564B1 (ko) * 1994-08-06 2003-06-02 엘지.필립스 엘시디 주식회사 액정표시소자의구조및제조방법
KR100388271B1 (ko) * 2000-10-14 2003-06-19 삼성에스디아이 주식회사 유기전계발광소자 및 그 제조방법
KR100809427B1 (ko) * 2006-07-10 2008-03-05 삼성전기주식회사 광전 변환 소자 및 이의 제조 방법

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US5517080A (en) * 1992-12-14 1996-05-14 Westinghouse Norden Systems Inc. Sunlight viewable thin film electroluminescent display having a graded layer of light absorbing dark material
EP0673590B1 (en) * 1992-12-14 1999-08-25 United Technologies Corporation Sunlight viewable thin film electroluminescent display having darkened metal electrodes
US5445898A (en) * 1992-12-16 1995-08-29 Westinghouse Norden Systems Sunlight viewable thin film electroluminescent display
KR960700623A (ko) * 1992-12-23 1996-01-20 켄트허친슨 고 콘트라스트의 박막 전계 발광 디스플레이 및 전계 발광 패널의 구성 방법(high contrast thin film electroluminescent display)
IT1263084B (it) * 1993-04-20 1996-07-24 Luciano Abbatemaggio Documento di riconoscimento ad effetto di elettroluminescenza ed il procedimento per la sua realizzazione.
US5504389A (en) * 1994-03-08 1996-04-02 Planar Systems, Inc. Black electrode TFEL display
US6358631B1 (en) 1994-12-13 2002-03-19 The Trustees Of Princeton University Mixed vapor deposited films for electroluminescent devices
US5703436A (en) 1994-12-13 1997-12-30 The Trustees Of Princeton University Transparent contacts for organic devices
US5707745A (en) 1994-12-13 1998-01-13 The Trustees Of Princeton University Multicolor organic light emitting devices
US6548956B2 (en) 1994-12-13 2003-04-15 The Trustees Of Princeton University Transparent contacts for organic devices
KR0164457B1 (ko) * 1995-01-20 1999-04-15 김은영 백색발광용 전계발광소자 및 그 제조방법
KR0165867B1 (ko) * 1995-01-21 1999-04-15 김은영 백색발광용 전계발광소자 및 그 제조방법
US5786664A (en) * 1995-03-27 1998-07-28 Youmin Liu Double-sided electroluminescent device
JP3420399B2 (ja) * 1995-07-28 2003-06-23 キヤノン株式会社 発光素子
US6046543A (en) * 1996-12-23 2000-04-04 The Trustees Of Princeton University High reliability, high efficiency, integratable organic light emitting devices and methods of producing same
GB9827014D0 (en) * 1998-12-08 1999-02-03 Cambridge Display Tech Ltd Display devices
GB9901334D0 (en) * 1998-12-08 1999-03-10 Cambridge Display Tech Ltd Display devices
CA2419121A1 (en) * 2002-05-03 2003-11-03 Luxell Technologies, Inc. Dark layer for an electroluminescent device
KR100908234B1 (ko) * 2003-02-13 2009-07-20 삼성모바일디스플레이주식회사 전계 발광 표시 장치 및 이의 제조방법
US9013461B2 (en) 2010-03-18 2015-04-21 Samsung Display Co., Ltd. Organic light emitting diode display
CN103474450A (zh) * 2013-09-11 2013-12-25 京东方科技集团股份有限公司 一种显示面板及其制造方法、显示装置

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GB2017138B (en) * 1978-02-03 1982-08-18 Sharp Kk Light absortion film for rear elecrodes of electroluminescent display panel
US4532454A (en) * 1983-09-16 1985-07-30 Gte Laboratories Incorporated Electroluminescent display having dark field semiconducting layer
US4721631A (en) * 1985-02-14 1988-01-26 Sharp Kabushiki Kaisha Method of manufacturing thin-film electroluminescent display panel
US5156924A (en) * 1988-12-29 1992-10-20 Sharp Kabushiki Kaisha Multi-color electroluminescent panel
JPH0458998U (ko) * 1990-09-26 1992-05-20

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100379564B1 (ko) * 1994-08-06 2003-06-02 엘지.필립스 엘시디 주식회사 액정표시소자의구조및제조방법
KR100388271B1 (ko) * 2000-10-14 2003-06-19 삼성에스디아이 주식회사 유기전계발광소자 및 그 제조방법
KR100809427B1 (ko) * 2006-07-10 2008-03-05 삼성전기주식회사 광전 변환 소자 및 이의 제조 방법

Also Published As

Publication number Publication date
EP0483783B1 (en) 1996-09-11
KR930010129B1 (ko) 1993-10-14
DE69122030T2 (de) 1997-02-06
EP0483783A2 (en) 1992-05-06
DE69122030D1 (de) 1996-10-17
EP0483783A3 (en) 1993-03-03
JPH0824070B2 (ja) 1996-03-06
US5352543A (en) 1994-10-04
JPH04264390A (ja) 1992-09-21

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