DE69126388T2 - Optische Halbleiter-Aufnahmevorrichtung und deren Herstellungsprozess - Google Patents

Optische Halbleiter-Aufnahmevorrichtung und deren Herstellungsprozess

Info

Publication number
DE69126388T2
DE69126388T2 DE69126388T DE69126388T DE69126388T2 DE 69126388 T2 DE69126388 T2 DE 69126388T2 DE 69126388 T DE69126388 T DE 69126388T DE 69126388 T DE69126388 T DE 69126388T DE 69126388 T2 DE69126388 T2 DE 69126388T2
Authority
DE
Germany
Prior art keywords
manufacturing process
recording device
optical semiconductor
semiconductor recording
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69126388T
Other languages
English (en)
Other versions
DE69126388D1 (de
Inventor
Yoshikazu Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69126388D1 publication Critical patent/DE69126388D1/de
Publication of DE69126388T2 publication Critical patent/DE69126388T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
DE69126388T 1990-09-07 1991-08-22 Optische Halbleiter-Aufnahmevorrichtung und deren Herstellungsprozess Expired - Fee Related DE69126388T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2238099A JP2861340B2 (ja) 1990-09-07 1990-09-07 半導体装置

Publications (2)

Publication Number Publication Date
DE69126388D1 DE69126388D1 (de) 1997-07-10
DE69126388T2 true DE69126388T2 (de) 1998-01-22

Family

ID=17025160

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69126388T Expired - Fee Related DE69126388T2 (de) 1990-09-07 1991-08-22 Optische Halbleiter-Aufnahmevorrichtung und deren Herstellungsprozess

Country Status (5)

Country Link
US (1) US5262667A (de)
EP (1) EP0474051B1 (de)
JP (1) JP2861340B2 (de)
KR (1) KR100215302B1 (de)
DE (1) DE69126388T2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6674562B1 (en) 1994-05-05 2004-01-06 Iridigm Display Corporation Interferometric modulation of radiation
US7830587B2 (en) * 1993-03-17 2010-11-09 Qualcomm Mems Technologies, Inc. Method and device for modulating light with semiconductor substrate
US8081369B2 (en) * 1994-05-05 2011-12-20 Qualcomm Mems Technologies, Inc. System and method for a MEMS device
US7826120B2 (en) * 1994-05-05 2010-11-02 Qualcomm Mems Technologies, Inc. Method and device for multi-color interferometric modulation
US8014059B2 (en) 1994-05-05 2011-09-06 Qualcomm Mems Technologies, Inc. System and method for charge control in a MEMS device
US7839556B2 (en) * 1994-05-05 2010-11-23 Qualcomm Mems Technologies, Inc. Method and device for modulating light
JP3016371B2 (ja) * 1997-03-26 2000-03-06 日本電気株式会社 光検出器の製造方法
US8928967B2 (en) * 1998-04-08 2015-01-06 Qualcomm Mems Technologies, Inc. Method and device for modulating light
WO1999052006A2 (en) 1998-04-08 1999-10-14 Etalon, Inc. Interferometric modulation of radiation
JP2002151729A (ja) * 2000-11-13 2002-05-24 Sony Corp 半導体装置及びその製造方法
JP4920839B2 (ja) * 2001-09-18 2012-04-18 キヤノン株式会社 撮像装置
KR100755629B1 (ko) * 2001-11-14 2007-09-04 매그나칩 반도체 유한회사 포토다이오드의 제조 방법
US7175777B1 (en) * 2003-12-02 2007-02-13 National Semiconductor Corporation Method of forming a sub-micron tip feature
JP2005286094A (ja) * 2004-03-30 2005-10-13 Sanyo Electric Co Ltd 光半導体集積回路装置
US7916980B2 (en) 2006-01-13 2011-03-29 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7007171A (de) * 1970-05-16 1971-11-18
US4078243A (en) * 1975-12-12 1978-03-07 International Business Machines Corporation Phototransistor array having uniform current response and method of manufacture
US4234792A (en) * 1977-09-29 1980-11-18 Raytheon Company Scintillator crystal radiation detector
JPS57104275A (en) * 1980-12-19 1982-06-29 Nec Corp Light receiving element
GB2095905B (en) * 1981-03-27 1985-01-16 Philips Electronic Associated Infra-red radiation imaging devices and methods for their manufacture
JPS59143362A (ja) * 1983-02-03 1984-08-16 Fuji Xerox Co Ltd パツシベ−シヨン膜
US4621275A (en) * 1983-04-30 1986-11-04 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device
US4694185A (en) * 1986-04-18 1987-09-15 Eastman Kodak Company Light sensing devices with lenticular pixels
JP2757985B2 (ja) * 1986-10-01 1998-05-25 ソニー株式会社 受光装置とその製造方法
JP2541249B2 (ja) * 1987-11-24 1996-10-09 ソニー株式会社 光集積回路装置
JPH1136391A (ja) * 1997-07-19 1999-02-09 Toto Ltd 水栓連結具及び水栓取付け具

Also Published As

Publication number Publication date
KR100215302B1 (ko) 1999-08-16
DE69126388D1 (de) 1997-07-10
KR920007254A (ko) 1992-04-28
JPH04119535A (ja) 1992-04-21
EP0474051A2 (de) 1992-03-11
EP0474051A3 (en) 1993-03-10
EP0474051B1 (de) 1997-06-04
US5262667A (en) 1993-11-16
JP2861340B2 (ja) 1999-02-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee