DE69030148D1 - Optische Halbleitervorrichtung - Google Patents

Optische Halbleitervorrichtung

Info

Publication number
DE69030148D1
DE69030148D1 DE69030148T DE69030148T DE69030148D1 DE 69030148 D1 DE69030148 D1 DE 69030148D1 DE 69030148 T DE69030148 T DE 69030148T DE 69030148 T DE69030148 T DE 69030148T DE 69030148 D1 DE69030148 D1 DE 69030148D1
Authority
DE
Germany
Prior art keywords
semiconductor device
optical semiconductor
optical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69030148T
Other languages
English (en)
Other versions
DE69030148T2 (de
Inventor
Mitsuru Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69030148D1 publication Critical patent/DE69030148D1/de
Publication of DE69030148T2 publication Critical patent/DE69030148T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
    • G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01766—Strained superlattice devices; Strained quantum well devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Power Engineering (AREA)
  • Biophysics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
DE69030148T 1989-09-26 1990-09-26 Optische Halbleitervorrichtung Expired - Fee Related DE69030148T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24981489 1989-09-26
JP2070009A JPH03174790A (ja) 1989-09-26 1990-03-20 光半導体素子

Publications (2)

Publication Number Publication Date
DE69030148D1 true DE69030148D1 (de) 1997-04-17
DE69030148T2 DE69030148T2 (de) 1997-06-19

Family

ID=26411184

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69030148T Expired - Fee Related DE69030148T2 (de) 1989-09-26 1990-09-26 Optische Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US5136602A (de)
EP (1) EP0420749B1 (de)
JP (1) JPH03174790A (de)
DE (1) DE69030148T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05145178A (ja) * 1991-11-18 1993-06-11 Furukawa Electric Co Ltd:The 歪量子井戸半導体レーザ素子
JP2953177B2 (ja) * 1992-03-11 1999-09-27 住友電気工業株式会社 マルチビーム半導体レーザ及びその製造方法
JP3306892B2 (ja) * 1992-02-28 2002-07-24 株式会社日立製作所 半導体光集積素子およびその製造方法
US5257276A (en) * 1992-04-03 1993-10-26 California Institute Of Technology Strained layer InP/InGaAs quantum well laser
GB9318666D0 (en) * 1993-09-09 1993-10-27 Northern Telecom Ltd Electro-absorption optical modulators
JPH07104222A (ja) * 1993-10-05 1995-04-21 Mitsubishi Electric Corp 半導体光変調器
JPH07261220A (ja) * 1994-03-25 1995-10-13 Atr Koudenpa Tsushin Kenkyusho:Kk 半導体光素子
US5480813A (en) * 1994-06-21 1996-01-02 At&T Corp. Accurate in-situ lattice matching by reflection high energy electron diffraction
JP3303631B2 (ja) * 1995-01-04 2002-07-22 キヤノン株式会社 半導体量子井戸構造
US5940569A (en) * 1995-02-28 1999-08-17 Siemens Aktiengesellschaft Integrated optical element on a substrate of InP
US5963358A (en) * 1995-04-26 1999-10-05 Kabushiki Kaisha Toshiba Semiconductor device and method for its operation
GB2307784B (en) * 1995-11-28 1998-02-04 Toshiba Cambridge Res Center Bistable optical element
KR100363241B1 (ko) * 1995-05-25 2003-02-05 삼성전자 주식회사 다중 양자 우물형 레이저 다이오드 및 그 제조방법
JP2002374042A (ja) * 2000-12-12 2002-12-26 Fuji Photo Film Co Ltd 半導体レーザ素子
US7308202B2 (en) * 2002-02-01 2007-12-11 Cubic Corporation Secure covert combat identification friend-or-foe (IFF) system for the dismounted soldier
WO2009009766A2 (en) * 2007-07-11 2009-01-15 Cubic Corporation Flip-chip photodiode
US8027591B2 (en) * 2007-10-29 2011-09-27 Cubic Corporation Resonant quantum well modulator driver
US7859675B2 (en) * 2007-11-06 2010-12-28 Cubic Corporation Field test of a retro-reflector and detector assembly
US20210036249A1 (en) * 2019-08-02 2021-02-04 The Florida State University Research Foundation, Incorporated Systems and methods for bulk semiconductor sensitized solid state upconversion
FR3119710B1 (fr) * 2021-02-05 2023-04-28 Lynred Détecteur infrarouge amélioré via l'ingénierie de la masse effective des porteurs de charges.

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE22893E (en) * 1947-06-24 Manufacture of an improved
FR2620863B1 (fr) * 1987-09-22 1989-12-01 Thomson Csf Dispositif optoelectronique a base de composes iii-v sur substrat silicium
JPH0770743B2 (ja) * 1987-11-10 1995-07-31 富士通株式会社 共鳴トンネリングバリア構造デバイス
US4941025A (en) * 1987-12-30 1990-07-10 Bell Communications Research, Inc. Quantum well semiconductor structures for infrared and submillimeter light sources
JP2649936B2 (ja) * 1988-03-01 1997-09-03 富士通株式会社 歪超格子バッファ
US4984242A (en) * 1989-09-18 1991-01-08 Spectra Diode Laboratories, Inc. GaAs/AlGaAs heterostructure laser containing indium
US4952792A (en) * 1989-10-13 1990-08-28 At&T Bell Laboratories Devices employing internally strained asymmetric quantum wells

Also Published As

Publication number Publication date
DE69030148T2 (de) 1997-06-19
EP0420749A2 (de) 1991-04-03
JPH03174790A (ja) 1991-07-29
EP0420749A3 (en) 1991-12-18
US5136602A (en) 1992-08-04
EP0420749B1 (de) 1997-03-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee