DE69019498D1 - Optische Halbleitervorrichtung. - Google Patents

Optische Halbleitervorrichtung.

Info

Publication number
DE69019498D1
DE69019498D1 DE69019498T DE69019498T DE69019498D1 DE 69019498 D1 DE69019498 D1 DE 69019498D1 DE 69019498 T DE69019498 T DE 69019498T DE 69019498 T DE69019498 T DE 69019498T DE 69019498 D1 DE69019498 D1 DE 69019498D1
Authority
DE
Germany
Prior art keywords
semiconductor device
optical semiconductor
optical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69019498T
Other languages
English (en)
Other versions
DE69019498T2 (de
Inventor
Akira Ajisawa
Tomoji Terakado
Masayuki Yamaguchi
Keiro Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1340101A external-priority patent/JP2540964B2/ja
Priority claimed from JP2062981A external-priority patent/JP2827411B2/ja
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69019498D1 publication Critical patent/DE69019498D1/de
Application granted granted Critical
Publication of DE69019498T2 publication Critical patent/DE69019498T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
    • G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
DE69019498T 1989-12-27 1990-12-27 Optische Halbleitervorrichtung. Expired - Fee Related DE69019498T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1340101A JP2540964B2 (ja) 1989-12-27 1989-12-27 光変調器と集積型光変調器と光検出器及びその製造方法
JP2062981A JP2827411B2 (ja) 1990-03-13 1990-03-13 光半導体素子及びその製造方法

Publications (2)

Publication Number Publication Date
DE69019498D1 true DE69019498D1 (de) 1995-06-22
DE69019498T2 DE69019498T2 (de) 1996-02-29

Family

ID=26404055

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69019498T Expired - Fee Related DE69019498T2 (de) 1989-12-27 1990-12-27 Optische Halbleitervorrichtung.

Country Status (3)

Country Link
US (1) US5825047A (de)
EP (1) EP0437836B1 (de)
DE (1) DE69019498T2 (de)

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GB9523731D0 (en) 1995-11-20 1996-01-24 British Telecomm Optical transmitter
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DE19642770A1 (de) 1996-10-16 1998-04-23 Basf Ag Verfahren zur Herstellung von Wasserstoffperoxid
JP3518834B2 (ja) * 1996-12-14 2004-04-12 株式会社東芝 半導体発光素子及び光ファイバ伝送方式
US6263005B1 (en) 1997-03-07 2001-07-17 Nec Corporation Method for selecting a semiconductor integrated optical modulator/laser light source device
US6026106A (en) * 1997-03-26 2000-02-15 Mitsubishi Denki Kabushiki Kaisha Composite optical device
JP2000208871A (ja) * 1999-01-19 2000-07-28 Oki Electric Ind Co Ltd 導波路型光素子，導波路型光素子の製造方法，光モジュ―ル，及び光モジュ―ルの製造方法
JP2001044566A (ja) * 1999-07-28 2001-02-16 Nec Corp 半導体レーザおよびその製造方法
JP3589920B2 (ja) * 1999-12-10 2004-11-17 Ｎｅｃ化合物デバイス株式会社 半導体受光素子
US6437372B1 (en) * 2000-01-07 2002-08-20 Agere Systems Guardian Corp. Diffusion barrier spikes for III-V structures
JP2001298211A (ja) * 2000-04-17 2001-10-26 Nec Corp 半導体受光素子及びその製造方法
JP4828018B2 (ja) * 2000-11-06 2011-11-30 三菱電機株式会社 光変調器およびその製造方法並びに光半導体装置
EP1282208A1 (de) 2001-07-30 2003-02-05 Agilent Technologies, Inc. (a Delaware corporation) Halbleiterlaserstruktur und Herstellungsverfahren
US6483161B1 (en) * 2001-08-14 2002-11-19 Sumitomo Electric Industries, Ltd. Submount with filter layers for mounting a bottom-incidence type photodiode
KR100424461B1 (ko) * 2001-09-05 2004-03-26 삼성전자주식회사 전계 흡수 변조형 레이저 모듈을 위한 본딩 패드 및 그 제조 방법
US6760529B2 (en) 2001-12-11 2004-07-06 Intel Corporation Three-dimensional tapered optical waveguides and methods of manufacture thereof
JP2003204114A (ja) * 2002-01-07 2003-07-18 Nec Corp 分布帰還型半導体レーザおよびその製造方法
US20040004217A1 (en) * 2002-03-06 2004-01-08 Vijaysekhar Jayaraman Semiconductor opto-electronic devices with wafer bonded gratings
US6816648B2 (en) 2002-05-01 2004-11-09 Intel Corporation Integrated waveguide gratings by ion implantation
US6670210B2 (en) * 2002-05-01 2003-12-30 Intel Corporation Optical waveguide with layered core and methods of manufacture thereof
JP4030847B2 (ja) * 2002-09-20 2008-01-09 ユーディナデバイス株式会社 半導体受光装置
US6815790B2 (en) * 2003-01-10 2004-11-09 Rapiscan, Inc. Position sensing detector for the detection of light within two dimensions
CN1312812C (zh) * 2003-03-03 2007-04-25 中国科学院半导体研究所 波长可调谐分布布拉格反射半导体激光器的制作方法
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US8120023B2 (en) * 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
US7656001B2 (en) 2006-11-01 2010-02-02 Udt Sensors, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US8519503B2 (en) * 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
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US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US7576369B2 (en) * 2005-10-25 2009-08-18 Udt Sensors, Inc. Deep diffused thin photodiodes
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JP2006066488A (ja) * 2004-08-25 2006-03-09 Mitsubishi Electric Corp 半導体受光素子およびその製造方法
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JP2011035018A (ja) * 2009-07-30 2011-02-17 Renesas Electronics Corp 半導体受光素子
EP3739635B1 (de) * 2010-06-30 2022-03-09 Alcatel Lucent Vorrichtung mit einer aktiven komponente und zugehörige elektroden sowie verfahren zur herstellung solch einer vorrichtung
WO2012124830A1 (ja) 2011-03-17 2012-09-20 日本碍子株式会社 光変調素子
GB2493193B (en) * 2011-07-27 2015-07-08 Thales Holdings Uk Plc Semiconductor device for optoelectric switching
US10243321B2 (en) * 2013-01-15 2019-03-26 Channel Investments, Llc Laser diode package
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
US9437782B2 (en) * 2014-06-18 2016-09-06 X-Celeprint Limited Micro assembled LED displays and lighting elements
US9595805B2 (en) * 2014-09-22 2017-03-14 International Business Machines Corporation III-V photonic integrated circuits on silicon substrate
WO2016157687A1 (ja) 2015-03-31 2016-10-06 日本電気株式会社 電気光学装置
US11061276B2 (en) 2015-06-18 2021-07-13 X Display Company Technology Limited Laser array display
JP2018026440A (ja) * 2016-08-09 2018-02-15 住友電気工業株式会社 集積量子カスケードレーザ、半導体光装置
US11262605B2 (en) * 2017-08-31 2022-03-01 Lightwave Logic Inc. Active region-less polymer modulator integrated on a common PIC platform and method
US10527786B2 (en) * 2017-08-31 2020-01-07 Lightwave Logic Inc. Polymer modulator and laser integrated on a common platform and method
US11131601B2 (en) * 2017-11-30 2021-09-28 Rain Tree Photonics Pte. Ltd. Method for in-line optical testing
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JP7569646B2 (ja) * 2020-09-16 2024-10-18 浜松ホトニクス株式会社 光検出モジュール及びビート分光装置
CN112736642A (zh) * 2020-11-10 2021-04-30 深圳瑞波光电子有限公司 激光芯片

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Also Published As

Publication number Publication date
US5825047A (en) 1998-10-20
DE69019498T2 (de) 1996-02-29
EP0437836B1 (de) 1995-05-17
EP0437836A2 (de) 1991-07-24
EP0437836A3 (en) 1992-04-01

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