DE69019498D1 - Optische Halbleitervorrichtung. - Google Patents
Optische Halbleitervorrichtung.Info
- Publication number
- DE69019498D1 DE69019498D1 DE69019498T DE69019498T DE69019498D1 DE 69019498 D1 DE69019498 D1 DE 69019498D1 DE 69019498 T DE69019498 T DE 69019498T DE 69019498 T DE69019498 T DE 69019498T DE 69019498 D1 DE69019498 D1 DE 69019498D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- optical semiconductor
- optical
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/0155—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption
- G02F1/0157—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction modulating the optical absorption using electro-absorption effects, e.g. Franz-Keldysh [FK] effect or quantum confined stark effect [QCSE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
- H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1340101A JP2540964B2 (ja) | 1989-12-27 | 1989-12-27 | 光変調器と集積型光変調器と光検出器及びその製造方法 |
JP2062981A JP2827411B2 (ja) | 1990-03-13 | 1990-03-13 | 光半導体素子及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69019498D1 true DE69019498D1 (de) | 1995-06-22 |
DE69019498T2 DE69019498T2 (de) | 1996-02-29 |
Family
ID=26404055
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69019498T Expired - Fee Related DE69019498T2 (de) | 1989-12-27 | 1990-12-27 | Optische Halbleitervorrichtung. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5825047A (de) |
EP (1) | EP0437836B1 (de) |
DE (1) | DE69019498T2 (de) |
Families Citing this family (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9523731D0 (en) | 1995-11-20 | 1996-01-24 | British Telecomm | Optical transmitter |
AU1887297A (en) * | 1996-03-27 | 1997-10-17 | British Telecommunications Public Limited Company | Optical modulator |
DE19642770A1 (de) | 1996-10-16 | 1998-04-23 | Basf Ag | Verfahren zur Herstellung von Wasserstoffperoxid |
JP3518834B2 (ja) * | 1996-12-14 | 2004-04-12 | 株式会社東芝 | 半導体発光素子及び光ファイバ伝送方式 |
US6263005B1 (en) | 1997-03-07 | 2001-07-17 | Nec Corporation | Method for selecting a semiconductor integrated optical modulator/laser light source device |
US6026106A (en) * | 1997-03-26 | 2000-02-15 | Mitsubishi Denki Kabushiki Kaisha | Composite optical device |
JP2000208871A (ja) * | 1999-01-19 | 2000-07-28 | Oki Electric Ind Co Ltd | 導波路型光素子,導波路型光素子の製造方法,光モジュ―ル,及び光モジュ―ルの製造方法 |
JP2001044566A (ja) * | 1999-07-28 | 2001-02-16 | Nec Corp | 半導体レーザおよびその製造方法 |
JP3589920B2 (ja) * | 1999-12-10 | 2004-11-17 | Nec化合物デバイス株式会社 | 半導体受光素子 |
US6437372B1 (en) * | 2000-01-07 | 2002-08-20 | Agere Systems Guardian Corp. | Diffusion barrier spikes for III-V structures |
JP2001298211A (ja) * | 2000-04-17 | 2001-10-26 | Nec Corp | 半導体受光素子及びその製造方法 |
JP4828018B2 (ja) * | 2000-11-06 | 2011-11-30 | 三菱電機株式会社 | 光変調器およびその製造方法並びに光半導体装置 |
EP1282208A1 (de) | 2001-07-30 | 2003-02-05 | Agilent Technologies, Inc. (a Delaware corporation) | Halbleiterlaserstruktur und Herstellungsverfahren |
US6483161B1 (en) * | 2001-08-14 | 2002-11-19 | Sumitomo Electric Industries, Ltd. | Submount with filter layers for mounting a bottom-incidence type photodiode |
KR100424461B1 (ko) * | 2001-09-05 | 2004-03-26 | 삼성전자주식회사 | 전계 흡수 변조형 레이저 모듈을 위한 본딩 패드 및 그 제조 방법 |
US6760529B2 (en) | 2001-12-11 | 2004-07-06 | Intel Corporation | Three-dimensional tapered optical waveguides and methods of manufacture thereof |
JP2003204114A (ja) * | 2002-01-07 | 2003-07-18 | Nec Corp | 分布帰還型半導体レーザおよびその製造方法 |
US20040004217A1 (en) * | 2002-03-06 | 2004-01-08 | Vijaysekhar Jayaraman | Semiconductor opto-electronic devices with wafer bonded gratings |
US6816648B2 (en) | 2002-05-01 | 2004-11-09 | Intel Corporation | Integrated waveguide gratings by ion implantation |
US6670210B2 (en) * | 2002-05-01 | 2003-12-30 | Intel Corporation | Optical waveguide with layered core and methods of manufacture thereof |
JP4030847B2 (ja) * | 2002-09-20 | 2008-01-09 | ユーディナデバイス株式会社 | 半導体受光装置 |
US6815790B2 (en) * | 2003-01-10 | 2004-11-09 | Rapiscan, Inc. | Position sensing detector for the detection of light within two dimensions |
CN1312812C (zh) * | 2003-03-03 | 2007-04-25 | 中国科学院半导体研究所 | 波长可调谐分布布拉格反射半导体激光器的制作方法 |
US7880258B2 (en) * | 2003-05-05 | 2011-02-01 | Udt Sensors, Inc. | Thin wafer detectors with improved radiation damage and crosstalk characteristics |
US7279731B1 (en) * | 2006-05-15 | 2007-10-09 | Udt Sensors, Inc. | Edge illuminated photodiodes |
US8120023B2 (en) * | 2006-06-05 | 2012-02-21 | Udt Sensors, Inc. | Low crosstalk, front-side illuminated, back-side contact photodiode array |
US7656001B2 (en) | 2006-11-01 | 2010-02-02 | Udt Sensors, Inc. | Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays |
US8519503B2 (en) * | 2006-06-05 | 2013-08-27 | Osi Optoelectronics, Inc. | High speed backside illuminated, front side contact photodiode array |
US7655999B2 (en) * | 2006-09-15 | 2010-02-02 | Udt Sensors, Inc. | High density photodiodes |
US7256470B2 (en) | 2005-03-16 | 2007-08-14 | Udt Sensors, Inc. | Photodiode with controlled current leakage |
US7709921B2 (en) | 2008-08-27 | 2010-05-04 | Udt Sensors, Inc. | Photodiode and photodiode array with improved performance characteristics |
US8686529B2 (en) | 2010-01-19 | 2014-04-01 | Osi Optoelectronics, Inc. | Wavelength sensitive sensor photodiodes |
US7576369B2 (en) * | 2005-10-25 | 2009-08-18 | Udt Sensors, Inc. | Deep diffused thin photodiodes |
US7242069B2 (en) * | 2003-05-05 | 2007-07-10 | Udt Sensors, Inc. | Thin wafer detectors with improved radiation damage and crosstalk characteristics |
US8035183B2 (en) * | 2003-05-05 | 2011-10-11 | Udt Sensors, Inc. | Photodiodes with PN junction on both front and back sides |
US7057254B2 (en) * | 2003-05-05 | 2006-06-06 | Udt Sensors, Inc. | Front illuminated back side contact thin wafer detectors |
US8164151B2 (en) * | 2007-05-07 | 2012-04-24 | Osi Optoelectronics, Inc. | Thin active layer fishbone photodiode and method of manufacturing the same |
JP4058633B2 (ja) * | 2003-07-10 | 2008-03-12 | セイコーエプソン株式会社 | 面発光型発光素子、光モジュール、光伝達装置 |
CN101032034A (zh) * | 2004-06-30 | 2007-09-05 | 克里公司 | 用于封装发光器件的芯片级方法和芯片级封装的发光器件 |
JP2006066488A (ja) * | 2004-08-25 | 2006-03-09 | Mitsubishi Electric Corp | 半導体受光素子およびその製造方法 |
TWI422044B (zh) * | 2005-06-30 | 2014-01-01 | Cree Inc | 封裝發光裝置之晶片尺度方法及經晶片尺度封裝之發光裝置 |
KR101280040B1 (ko) | 2006-09-12 | 2013-07-01 | 삼성전자주식회사 | 멀티 빔형 레이저 장치 및 이를 이용한 화상형성장치 |
US9178092B2 (en) | 2006-11-01 | 2015-11-03 | Osi Optoelectronics, Inc. | Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays |
US20100053802A1 (en) * | 2008-08-27 | 2010-03-04 | Masaki Yamashita | Low Power Disk-Drive Motor Driver |
GB2476019B (en) * | 2008-09-15 | 2013-03-13 | Osi Optoelectronics Inc | Thin active layer fishbone photodiode with a shallow N+ layer and method of manufacturing the same |
US8399909B2 (en) | 2009-05-12 | 2013-03-19 | Osi Optoelectronics, Inc. | Tetra-lateral position sensing detector |
JP2011035018A (ja) * | 2009-07-30 | 2011-02-17 | Renesas Electronics Corp | 半導体受光素子 |
EP3739635B1 (de) * | 2010-06-30 | 2022-03-09 | Alcatel Lucent | Vorrichtung mit einer aktiven komponente und zugehörige elektroden sowie verfahren zur herstellung solch einer vorrichtung |
WO2012124830A1 (ja) | 2011-03-17 | 2012-09-20 | 日本碍子株式会社 | 光変調素子 |
GB2493193B (en) * | 2011-07-27 | 2015-07-08 | Thales Holdings Uk Plc | Semiconductor device for optoelectric switching |
US10243321B2 (en) * | 2013-01-15 | 2019-03-26 | Channel Investments, Llc | Laser diode package |
US8912615B2 (en) | 2013-01-24 | 2014-12-16 | Osi Optoelectronics, Inc. | Shallow junction photodiode for detecting short wavelength light |
US9437782B2 (en) * | 2014-06-18 | 2016-09-06 | X-Celeprint Limited | Micro assembled LED displays and lighting elements |
US9595805B2 (en) * | 2014-09-22 | 2017-03-14 | International Business Machines Corporation | III-V photonic integrated circuits on silicon substrate |
WO2016157687A1 (ja) | 2015-03-31 | 2016-10-06 | 日本電気株式会社 | 電気光学装置 |
US11061276B2 (en) | 2015-06-18 | 2021-07-13 | X Display Company Technology Limited | Laser array display |
JP2018026440A (ja) * | 2016-08-09 | 2018-02-15 | 住友電気工業株式会社 | 集積量子カスケードレーザ、半導体光装置 |
US11262605B2 (en) * | 2017-08-31 | 2022-03-01 | Lightwave Logic Inc. | Active region-less polymer modulator integrated on a common PIC platform and method |
US10527786B2 (en) * | 2017-08-31 | 2020-01-07 | Lightwave Logic Inc. | Polymer modulator and laser integrated on a common platform and method |
US11131601B2 (en) * | 2017-11-30 | 2021-09-28 | Rain Tree Photonics Pte. Ltd. | Method for in-line optical testing |
EP3581993A1 (de) * | 2018-06-11 | 2019-12-18 | IMEC vzw | Monolithischer iii-v/si-wellenleiter-phasenmodulator |
JP7569646B2 (ja) * | 2020-09-16 | 2024-10-18 | 浜松ホトニクス株式会社 | 光検出モジュール及びビート分光装置 |
CN112736642A (zh) * | 2020-11-10 | 2021-04-30 | 深圳瑞波光电子有限公司 | 激光芯片 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4608696A (en) * | 1983-06-08 | 1986-08-26 | Trw Inc. | Integrated laser and field effect transistor |
JPS62194691A (ja) * | 1986-02-21 | 1987-08-27 | Kokusai Denshin Denwa Co Ltd <Kdd> | 光導波路領域を有する半導体光集積装置の製造方法 |
-
1990
- 1990-12-27 DE DE69019498T patent/DE69019498T2/de not_active Expired - Fee Related
- 1990-12-27 EP EP90125516A patent/EP0437836B1/de not_active Expired - Lifetime
-
1994
- 1994-09-16 US US08/307,036 patent/US5825047A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5825047A (en) | 1998-10-20 |
DE69019498T2 (de) | 1996-02-29 |
EP0437836B1 (de) | 1995-05-17 |
EP0437836A2 (de) | 1991-07-24 |
EP0437836A3 (en) | 1992-04-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |