DE69524794T2 - Optische Halbleitervorrichtung und Herstellungsverfahren - Google Patents

Optische Halbleitervorrichtung und Herstellungsverfahren

Info

Publication number
DE69524794T2
DE69524794T2 DE69524794T DE69524794T DE69524794T2 DE 69524794 T2 DE69524794 T2 DE 69524794T2 DE 69524794 T DE69524794 T DE 69524794T DE 69524794 T DE69524794 T DE 69524794T DE 69524794 T2 DE69524794 T2 DE 69524794T2
Authority
DE
Germany
Prior art keywords
manufacturing
optical device
semiconductor optical
semiconductor
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69524794T
Other languages
English (en)
Other versions
DE69524794D1 (de
Inventor
Natsuhiko Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69524794D1 publication Critical patent/DE69524794D1/de
Application granted granted Critical
Publication of DE69524794T2 publication Critical patent/DE69524794T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3077—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping
    • H01S5/3081—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping using amphoteric doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/915—Amphoteric doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69524794T 1994-01-18 1995-01-16 Optische Halbleitervorrichtung und Herstellungsverfahren Expired - Fee Related DE69524794T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01781494A JP3234086B2 (ja) 1994-01-18 1994-01-18 光半導体デバイス及びその製造方法

Publications (2)

Publication Number Publication Date
DE69524794D1 DE69524794D1 (de) 2002-02-07
DE69524794T2 true DE69524794T2 (de) 2002-08-08

Family

ID=11954211

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69524794T Expired - Fee Related DE69524794T2 (de) 1994-01-18 1995-01-16 Optische Halbleitervorrichtung und Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5728605A (de)
EP (1) EP0663710B1 (de)
JP (1) JP3234086B2 (de)
DE (1) DE69524794T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5686744A (en) * 1996-06-17 1997-11-11 Northern Telecom Limited Complementary modulation-doped field-effect transistors
JP3662402B2 (ja) * 1997-11-07 2005-06-22 三菱電機株式会社 光半導体モジュール
WO1999039405A2 (de) * 1998-01-30 1999-08-05 Osram Opto Semiconductors Gmbh & Co. Ohg Halbleiterlaser-chip
JP3384447B2 (ja) * 1999-07-12 2003-03-10 Ｎｅｃ化合物デバイス株式会社 吸収型光変調器およびその製造方法
US7160746B2 (en) 2001-07-27 2007-01-09 Lightwave Microsystems Corporation GeBPSG top clad for a planar lightwave circuit
JP2003142728A (ja) * 2001-11-02 2003-05-16 Sharp Corp 半導体発光素子の製造方法
US7110629B2 (en) * 2002-07-22 2006-09-19 Applied Materials, Inc. Optical ready substrates
US7072534B2 (en) * 2002-07-22 2006-07-04 Applied Materials, Inc. Optical ready substrates
US7043106B2 (en) * 2002-07-22 2006-05-09 Applied Materials, Inc. Optical ready wafers
US7529435B2 (en) * 2003-05-29 2009-05-05 Applied Materials, Inc. Serial routing of optical signals
JP2007525012A (ja) 2003-06-27 2007-08-30 アプライド　マテリアルズ　インコーポレイテッド 低ジッタのパルス型量子ドットレーザシステム
US20050016446A1 (en) 2003-07-23 2005-01-27 Abbott John S. CaF2 lenses with reduced birefringence
JP2005039300A (ja) * 2004-11-05 2005-02-10 Mitsubishi Electric Corp 光半導体モジュール
US20060222024A1 (en) * 2005-03-15 2006-10-05 Gray Allen L Mode-locked semiconductor lasers with quantum-confined active region
US20060227825A1 (en) * 2005-04-07 2006-10-12 Nl-Nanosemiconductor Gmbh Mode-locked quantum dot laser with controllable gain properties by multiple stacking
WO2007027615A1 (en) * 2005-09-01 2007-03-08 Applied Materials, Inc. Ridge technique for fabricating an optical detector and an optical waveguide
GB2432456A (en) 2005-11-21 2007-05-23 Bookham Technology Plc High power semiconductor laser diode
JP2009518833A (ja) * 2005-12-07 2009-05-07 インノルメ ゲゼルシャフト ミット ベシュレンクテル ハフツング 広帯域スペクトル発光を有するレーザ光源
US7561607B2 (en) * 2005-12-07 2009-07-14 Innolume Gmbh Laser source with broadband spectrum emission
US7835408B2 (en) * 2005-12-07 2010-11-16 Innolume Gmbh Optical transmission system
EP2371044B1 (de) * 2008-12-03 2019-08-28 Innolume GmbH Halbleiterlaser mit geringem relativem intensitätsrauschen individueller longitudinalmoden und den laser umfassendes optisches übertragungssystem
CN102638003A (zh) * 2012-05-02 2012-08-15 浙江大学 分布反馈激光器阵列
KR102060383B1 (ko) * 2018-02-23 2019-12-30 한국과학기술연구원 3족-5족 화합물 반도체 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4032033A (en) * 1976-03-18 1977-06-28 Western Electric Company, Inc. Methods and apparatus for heating articles
JPS61270886A (ja) * 1985-05-25 1986-12-01 Mitsubishi Electric Corp 半導体レ−ザ装置
US4839307A (en) * 1986-05-14 1989-06-13 Omron Tateisi Electronics Co. Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement
EP0261262B1 (de) * 1986-09-23 1992-06-17 International Business Machines Corporation Streifenlaser mit transversalem Übergang
US4932033A (en) * 1986-09-26 1990-06-05 Canon Kabushiki Kaisha Semiconductor laser having a lateral p-n junction utilizing inclined surface and method of manufacturing same
US4785457A (en) * 1987-05-11 1988-11-15 Rockwell International Corporation Heterostructure semiconductor laser
JP2630035B2 (ja) * 1990-07-27 1997-07-16 日本電気株式会社 波長可変半導体レーザ
JPH0529713A (ja) * 1991-07-22 1993-02-05 Sharp Corp 半導体レーザ素子
US5155560A (en) * 1991-07-22 1992-10-13 Eastman Kodak Company Semiconductor index guided laser diode having both contacts on same surface
US5222087A (en) * 1991-07-26 1993-06-22 Siemens Aktiengesellschaft Ttg-dfb laser diode
JP2943510B2 (ja) * 1991-08-09 1999-08-30 日本電気株式会社 可変波長半導体レーザ装置
DE59300103D1 (de) * 1992-07-08 1995-04-13 Siemens Ag Modulierbare Laserdiode für hohe Frequenzen.
JPH06181362A (ja) * 1992-12-14 1994-06-28 Canon Inc 半導体装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
US5728605A (en) 1998-03-17
EP0663710A3 (de) 1996-01-10
JP3234086B2 (ja) 2001-12-04
JPH07211984A (ja) 1995-08-11
EP0663710A2 (de) 1995-07-19
DE69524794D1 (de) 2002-02-07
EP0663710B1 (de) 2002-01-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee