DE69407312T2 - Integrierte optische Halbleiteranordnung und Herstellungsverfahren - Google Patents

Integrierte optische Halbleiteranordnung und Herstellungsverfahren

Info

Publication number
DE69407312T2
DE69407312T2 DE69407312T DE69407312T DE69407312T2 DE 69407312 T2 DE69407312 T2 DE 69407312T2 DE 69407312 T DE69407312 T DE 69407312T DE 69407312 T DE69407312 T DE 69407312T DE 69407312 T2 DE69407312 T2 DE 69407312T2
Authority
DE
Germany
Prior art keywords
manufacturing
optical device
semiconductor optical
integrated semiconductor
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69407312T
Other languages
English (en)
Other versions
DE69407312D1 (de
Inventor
Tatsuya Sasaki
Mitsuhiro Kitamura
Kiichi Hamamoto
Shotaro Kitamura
Keiro Komatsu
Yasutaka Sakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5154042A external-priority patent/JP2682379B2/ja
Priority claimed from JP5154040A external-priority patent/JP2606078B2/ja
Priority claimed from JP33796793A external-priority patent/JP2814906B2/ja
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69407312D1 publication Critical patent/DE69407312D1/de
Publication of DE69407312T2 publication Critical patent/DE69407312T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2272—Buried mesa structure ; Striped active layer grown by a mask induced selective growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69407312T 1993-01-07 1994-01-07 Integrierte optische Halbleiteranordnung und Herstellungsverfahren Expired - Fee Related DE69407312T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP91493 1993-01-07
JP5154042A JP2682379B2 (ja) 1993-06-25 1993-06-25 半導体ゲート型光スイッチ又は半導体マトリクス光スイッチ及びその製造方法
JP5154040A JP2606078B2 (ja) 1993-06-25 1993-06-25 半導体レーザアレイおよびその製造方法
JP33796793A JP2814906B2 (ja) 1993-01-07 1993-12-28 光半導体素子およびその製造方法

Publications (2)

Publication Number Publication Date
DE69407312D1 DE69407312D1 (de) 1998-01-29
DE69407312T2 true DE69407312T2 (de) 1998-07-23

Family

ID=27453275

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69407312T Expired - Fee Related DE69407312T2 (de) 1993-01-07 1994-01-07 Integrierte optische Halbleiteranordnung und Herstellungsverfahren

Country Status (3)

Country Link
US (2) US5565693A (de)
EP (1) EP0606093B1 (de)
DE (1) DE69407312T2 (de)

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JP3611593B2 (ja) * 1994-02-14 2005-01-19 日本オプネクスト株式会社 半導体光素子の作製方法
JP2982619B2 (ja) * 1994-06-29 1999-11-29 日本電気株式会社 半導体光導波路集積型受光素子
DE69505064D1 (de) * 1994-07-15 1998-11-05 Nec Corp Wellenlängenabstimmbarer Halbleiterlaser
US5814534A (en) * 1994-08-05 1998-09-29 Mitsubishi Denki Kabushiki Kaisha Method of doping with beryllium and method of fabricating semiconductor optical element doped with beryllium
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JPH08146365A (ja) * 1994-11-16 1996-06-07 Nec Corp 半導体マッハツェンダー変調装置及びその製造方法
JP2765545B2 (ja) * 1995-12-26 1998-06-18 日本電気株式会社 光波長弁別回路およびその製造方法
DE19619533A1 (de) * 1996-05-15 1997-11-20 Sel Alcatel Ag Monolithisch integriertes optisches Halbleiterbauelement
JP2955986B2 (ja) * 1996-05-22 1999-10-04 日本電気株式会社 半導体光変調器及びその製造方法
EP0952470A3 (de) * 1998-04-23 2004-01-14 Nec Corporation Verfahren zur Herstellung einen optischen Vielfachhalbleiterwellenleiter und einer vielfachstrukturierten optische Halbleitervorrichtung
US6690845B1 (en) 1998-10-09 2004-02-10 Fujitsu Limited Three-dimensional opto-electronic modules with electrical and optical interconnections and methods for making
US6684007B2 (en) 1998-10-09 2004-01-27 Fujitsu Limited Optical coupling structures and the fabrication processes
US6785447B2 (en) 1998-10-09 2004-08-31 Fujitsu Limited Single and multilayer waveguides and fabrication process
US6845184B1 (en) 1998-10-09 2005-01-18 Fujitsu Limited Multi-layer opto-electronic substrates with electrical and optical interconnections and methods for making
US6706546B2 (en) 1998-10-09 2004-03-16 Fujitsu Limited Optical reflective structures and method for making
US6611635B1 (en) 1998-10-09 2003-08-26 Fujitsu Limited Opto-electronic substrates with electrical and optical interconnections and methods for making
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US6403393B1 (en) 1999-09-01 2002-06-11 International Business Machines Corporation Device having integrated optical and copper conductors and method of fabricating same
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JP3847038B2 (ja) * 1999-11-26 2006-11-15 Ｎｅｃエレクトロニクス株式会社 光半導体装置およびその製造方法
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JP3339488B2 (ja) 2000-02-25 2002-10-28 日本電気株式会社 光半導体装置およびその製造方法
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JP3991615B2 (ja) * 2001-04-24 2007-10-17 日本電気株式会社 半導体光アンプおよび半導体レーザ
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JP4320167B2 (ja) * 2002-12-12 2009-08-26 忠弘 大見 半導体素子及びシリコン酸化窒化膜の製造方法
KR100928963B1 (ko) * 2003-01-10 2009-11-26 삼성전자주식회사 양자우물을 가지는 광소자
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EP1840607B1 (de) * 2005-01-20 2013-11-06 Fujitsu Ltd. Optisches wellenleiterbauelement und halbleiterbauelement
EP2088651A1 (de) * 2008-02-11 2009-08-12 TRUMPF Laser GmbH + Co. KG Diodenlaserstruktur zur Erzeugung von Diodenlaserstrahlung mit faserkopplungsoptimierten Strahlparameterprodukt
EP2272304A2 (de) 2008-03-13 2011-01-12 Nxp B.V. Leuchtkomponente und herstellungsverfahren
JP2010010450A (ja) * 2008-06-27 2010-01-14 Mitsubishi Electric Corp 導波路型受光素子
WO2011030593A1 (ja) * 2009-09-10 2011-03-17 日本電気株式会社 電気光学変調器
JP5573386B2 (ja) 2010-06-10 2014-08-20 三菱電機株式会社 半導体光集積素子及びその製造方法
JP2013168500A (ja) 2012-02-15 2013-08-29 Mitsubishi Electric Corp 光半導体装置
KR20130104541A (ko) * 2012-03-14 2013-09-25 한국전자통신연구원 파장가변 레이저 모듈
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US10761266B2 (en) * 2016-06-03 2020-09-01 The Regents Of The University Of California Integration of direct-bandgap optically active devices on indirect-bandgap-based substrates

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Also Published As

Publication number Publication date
EP0606093B1 (de) 1997-12-17
EP0606093A2 (de) 1994-07-13
US5565693A (en) 1996-10-15
EP0606093A3 (de) 1994-10-19
DE69407312D1 (de) 1998-01-29
US5770466A (en) 1998-06-23

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