DE69313365D1 - Optische Halbleitervorrichtung und ihr Herstellungsverfahren - Google Patents

Optische Halbleitervorrichtung und ihr Herstellungsverfahren

Info

Publication number
DE69313365D1
DE69313365D1 DE69313365T DE69313365T DE69313365D1 DE 69313365 D1 DE69313365 D1 DE 69313365D1 DE 69313365 T DE69313365 T DE 69313365T DE 69313365 T DE69313365 T DE 69313365T DE 69313365 D1 DE69313365 D1 DE 69313365D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor device
optical semiconductor
optical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69313365T
Other languages
English (en)
Other versions
DE69313365T2 (de
Inventor
Mita Keizi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Application granted granted Critical
Publication of DE69313365D1 publication Critical patent/DE69313365D1/de
Publication of DE69313365T2 publication Critical patent/DE69313365T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier

Landscapes

  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE69313365T 1992-06-25 1993-06-24 Optische Halbleitervorrichtung und ihr Herstellungsverfahren Expired - Lifetime DE69313365T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4167545A JP2793085B2 (ja) 1992-06-25 1992-06-25 光半導体装置とその製造方法

Publications (2)

Publication Number Publication Date
DE69313365D1 true DE69313365D1 (de) 1997-10-02
DE69313365T2 DE69313365T2 (de) 1998-03-19

Family

ID=15851704

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69313365T Expired - Lifetime DE69313365T2 (de) 1992-06-25 1993-06-24 Optische Halbleitervorrichtung und ihr Herstellungsverfahren

Country Status (5)

Country Link
US (1) US5418396A (de)
EP (1) EP0576009B1 (de)
JP (1) JP2793085B2 (de)
KR (1) KR100208643B1 (de)
DE (1) DE69313365T2 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2731115B2 (ja) * 1994-07-14 1998-03-25 シャープ株式会社 分割型受光素子
US5770872A (en) * 1995-12-06 1998-06-23 Arai; Chihiro Photoelectric converter apparatus
KR100223828B1 (ko) * 1996-09-02 1999-10-15 구본준 반도체 소자의 제조방법
JP3170463B2 (ja) * 1996-09-30 2001-05-28 シャープ株式会社 回路内蔵受光素子
TW423103B (en) * 1997-01-27 2001-02-21 Sharp Kk Divided photodiode
JPH10284753A (ja) * 1997-04-01 1998-10-23 Sony Corp 半導体装置及びその製造方法
JP4739467B2 (ja) * 1997-04-03 2011-08-03 ローム株式会社 光電気変換ｉｃ
US6274464B2 (en) * 1998-02-06 2001-08-14 Texas Instruments Incorporated Epitaxial cleaning process using HCL and N-type dopant gas to reduce defect density and auto doping effects
DE69906923T2 (de) 1998-12-28 2004-02-26 Sharp K.K. Lichtempfänger mit integrierter Schaltung
JP3317942B2 (ja) * 1999-11-08 2002-08-26 シャープ株式会社 半導体装置およびその製造方法
JP2001284629A (ja) 2000-03-29 2001-10-12 Sharp Corp 回路内蔵受光素子
US6429500B1 (en) * 2000-09-29 2002-08-06 International Business Machines Corporation Semiconductor pin diode for high frequency applications
JP4208172B2 (ja) * 2000-10-31 2009-01-14 シャープ株式会社 フォトダイオードおよびそれを用いた回路内蔵受光素子
US6593636B1 (en) * 2000-12-05 2003-07-15 Udt Sensors, Inc. High speed silicon photodiodes and method of manufacture
JP2002231992A (ja) * 2001-02-02 2002-08-16 Toshiba Corp 半導体受光素子
JP4940511B2 (ja) * 2001-07-05 2012-05-30 ソニー株式会社 半導体装置およびその製造方法
JP2004087979A (ja) * 2002-08-28 2004-03-18 Sharp Corp 受光素子およびその製造方法並びに回路内蔵型受光素子
DE10241156A1 (de) * 2002-09-05 2004-03-18 Infineon Technologies Ag Verfahren zum Herstellen einer integrierten pin-Diode und zugehörige Schaltungsanordnung
JP4083553B2 (ja) * 2002-11-28 2008-04-30 松下電器産業株式会社 光半導体装置
WO2004079825A1 (ja) * 2003-03-06 2004-09-16 Sony Corporation 固体撮像素子及びその製造方法、並びに固体撮像素子の駆動方法
US8120023B2 (en) 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US7115439B2 (en) * 2004-01-16 2006-10-03 Eastman Kodak Company High photosensitivity CMOS image sensor pixel architecture
US20070045668A1 (en) * 2005-08-26 2007-03-01 Micron Technology, Inc. Vertical anti-blooming control and cross-talk reduction for imagers
JP4966591B2 (ja) * 2006-06-07 2012-07-04 日本オプネクスト株式会社 半導体発光素子の製造方法
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US7935546B2 (en) * 2008-02-06 2011-05-03 International Business Machines Corporation Method and apparatus for measurement and control of photomask to substrate alignment
BRPI0919221A2 (pt) 2008-09-15 2015-12-08 Osi Optoelectronics Inc fotodiodo de espinha de peixe de camada ativa fina com uma camada n+ rasa e método de fabricação do mesmo
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
JP2010278045A (ja) * 2009-05-26 2010-12-09 Panasonic Corp 光半導体装置
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
JP2020009790A (ja) * 2016-11-09 2020-01-16 シャープ株式会社 アバランシェフォトダイオード
CN107946333A (zh) * 2017-11-30 2018-04-20 德淮半导体有限公司 图像传感器及形成图像传感器的方法
CN114883213A (zh) * 2022-07-11 2022-08-09 广州粤芯半导体技术有限公司 半导体工艺的集成化监测方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS546794A (en) * 1977-06-17 1979-01-19 Nec Corp Semiconductor device
JPS5660054A (en) * 1979-10-19 1981-05-23 Toshiba Corp Semiconductor integrated circuit
JPS5661160A (en) * 1979-10-25 1981-05-26 Pioneer Electronic Corp Semiconductor device
JPS6161457A (ja) * 1984-09-01 1986-03-29 Canon Inc 光センサおよびその製造方法
JPS61216464A (ja) * 1985-03-22 1986-09-26 Nec Corp 受光ダイオ−ドとトランジスタのモノリシツク集積素子
JPS63174357A (ja) * 1987-01-13 1988-07-18 Mitsubishi Electric Corp 半導体集積回路装置
JP2800827B2 (ja) * 1988-02-12 1998-09-21 浜松ホトニクス株式会社 光半導体装置およびその製造方法
JPH01255581A (ja) * 1988-04-04 1989-10-12 Fuji Photo Film Co Ltd 感圧記録材料
JPH0779154B2 (ja) * 1989-03-10 1995-08-23 シャープ株式会社 回路内蔵受光素子
JP2717839B2 (ja) * 1989-03-20 1998-02-25 松下電子工業株式会社 光半導体装置
NL8901629A (nl) * 1989-06-28 1991-01-16 Philips Nv Stralingsgevoelige halfgeleiderinrichting en uitlees- of schrijfeenheid bevattende een dergelijke stralingsgevoelige halfgeleiderinrichting.
JPH04114469A (ja) * 1990-09-04 1992-04-15 Sharp Corp 回路内蔵受光素子
JPH04152670A (ja) * 1990-10-17 1992-05-26 Nec Corp 受光素子の製造方法
JP2557750B2 (ja) * 1991-02-27 1996-11-27 三洋電機株式会社 光半導体装置

Also Published As

Publication number Publication date
JP2793085B2 (ja) 1998-09-03
KR100208643B1 (ko) 1999-07-15
EP0576009A1 (de) 1993-12-29
US5418396A (en) 1995-05-23
DE69313365T2 (de) 1998-03-19
EP0576009B1 (de) 1997-08-27
JPH0613643A (ja) 1994-01-21
KR940001385A (ko) 1994-01-11

Similar Documents

Publication Publication Date Title
DE69313365T2 (de) Optische Halbleitervorrichtung und ihr Herstellungsverfahren
DE69223463D1 (de) Optische Halbleiter-Wellenleitervorrichtung und ihr Herstellungsverfahren
DE69407312D1 (de) Integrierte optische Halbleiteranordnung und Herstellungsverfahren
DE69511810D1 (de) Optische Halbleitervorrichtung und Herstellungsverfahren
DE69414208D1 (de) Optischer Halbleitervorrichtung und Herstellungsverfahren
DE69220120D1 (de) Integrierte optische Wellenleitervorrichtungen und Herstellungsverfahren
DE69431318T2 (de) Optische Verrichtungen, integrierte optische Vorrichtungen und Herstellungsverfahren derselben
DE69303654D1 (de) Optische Wellenleitervorrichtung und Herstellungsverfahren
DE69435205D1 (de) Dünne Halbleitervorrichtung und Herstellungsverfahren
DE69323127T2 (de) Halbleitervorrichtung und Herstellungsverfahren
DE69524794T2 (de) Optische Halbleitervorrichtung und Herstellungsverfahren
DE19545164B8 (de) Optische Halbleitervorrichtung mit vergrabenem Wellenleiter und Herstellungsverfahren dafür
DE69413602T2 (de) Halbleiteranordnung und Herstellungsverfahren
DE69323958D1 (de) Optische Wellenleiter-Anordnung und Herstellungsmethode
DE69430511D1 (de) Halbleiteranordnung und Herstellungverfahren
DE69424728T2 (de) Halbleiteranordnung und zugehörige Herstellungsmethode
DE69325343T2 (de) Halbleiteranordnung und Herstellungsverfahren dafür
DE69735327D1 (de) Optische Halbleitervorrichtung und Herstellungsverfahren
DE69408743T2 (de) Optische Kopplungsvorrichtung und zugehörige Herstellungsmethode
DE69132868D1 (de) Halbleiterlaservorrichtung und Herstellungsverfahren
DE69118113D1 (de) Optische Halbleiteranordnung und ihr Herstellungsverfahren
DE69318487D1 (de) Halbleiterlaservorrichtung, optische Vorrichtung und Herstellungsverfahren
DE69120346D1 (de) Optische Funktionsvorrichtung und ihr Ansteuerverfahren
DE69126388D1 (de) Optische Halbleiter-Aufnahmevorrichtung und deren Herstellungsprozess
DE69133230D1 (de) Halbleiterlaservorrichtung und Herstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition